Untitled
Abstract: No abstract text available
Text: T1110P6 Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity
|
Original
|
PDF
|
T1110P6
2002/95/EC
2002/96/EC
T1110P6
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm
|
Original
|
PDF
|
TS8542VA
TS8542VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: TB9414VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm
|
Original
|
PDF
|
TB9414VA
TB9414VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: = 940 nm
|
Original
|
PDF
|
TB9414VA
2002/95/EC
2002/96/EC
TB9414VA
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: T5096P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor E: emitter FEATURES • Package type: chip • Package form: chip • Dimensions L x W x H in mm : 0.39 x 0.39 x 0.185 • High photo sensitivity • High collector current E • Small size
|
Original
|
PDF
|
T5096P
T5096P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: T1090P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.53 x 0.53 x 0.185 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
|
Original
|
PDF
|
T1090P
T1090P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: T1070P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25
|
Original
|
PDF
|
T1070P
T1070P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: T1677P www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.28 • Radiant sensitive area (in mm2): 0.27 • Peak sensitivity wavelength: 570 nm
|
Original
|
PDF
|
T1677P
T1677P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: T8914VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm
|
Original
|
PDF
|
T8914VA
T8914VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: T1187P www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.67 x 0.3 x 0.28 • Radiant sensitive area (in mm2): 0.053 • Peak sensitivity wavelength: 800 nm
|
Original
|
PDF
|
T1187P
T1187P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: T163VU www.vishay.com Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability
|
Original
|
PDF
|
T163VU
T163VU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: T1116P www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity A • High radiant sensitivity
|
Original
|
PDF
|
T1116P
T1116P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: T8719VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength: λ = 870 nm
|
Original
|
PDF
|
T8719VA
T8719VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: = 940 nm
|
Original
|
PDF
|
TB9414VA
2002/95/EC
2002/96/EC
TB9414VA
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
|
|
|
T1670P
Abstract: mhz disco FVOV6870 MIL-HDBK-263 photodiode CIE eye response
Text: T1670P Vishay Semiconductors Silicon PIN Photodiode FEATURES • • • • • • • • • • • • A 21667 DESCRIPTION T1670P ambient light sensor chip is a PIN photodiode with 0.27 mm2 sensitive area, high speed and high photo sensitivity. It is sensitive to visible light much like the human
|
Original
|
PDF
|
T1670P
T1670P
18-Jul-08
mhz disco
FVOV6870
MIL-HDBK-263
photodiode CIE eye response
|
VISHAY Optoelectronics
Abstract: FVOV6870 MIL-HDBK-263
Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm
|
Original
|
PDF
|
TB9414VA
2002/95/EC
2002/96/EC
TB9414VA
18-Jul-08
VISHAY Optoelectronics
FVOV6870
MIL-HDBK-263
|
FVOV6870
Abstract: MIL-HDBK-263 silicon npn phototransistor phototransistor die
Text: T5090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES E: emitter • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.185 • High photo sensitivity • High radiant sensitivity E • Suitable for visible and near infrared radiation
|
Original
|
PDF
|
T5090P
2002/95/EC
2002/96/EC
T5090P
18-Jul-08
FVOV6870
MIL-HDBK-263
silicon npn phototransistor
phototransistor die
|
Untitled
Abstract: No abstract text available
Text: T1670P Vishay Semiconductors Silicon PIN Photodiode FEATURES • • • • • • • • • • • • A 21667 DESCRIPTION T1670P ambient light sensor chip is a PIN photodiode with 0.27 mm2 sensitive area, high speed and high photo sensitivity. It is sensitive to visible light much like the human
|
Original
|
PDF
|
T1670P
2002/95/EC
2002/96/EC
T1670P
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: T163VU Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability • Low forward voltage
|
Original
|
PDF
|
T163VU
2002/95/EC
2002/96/EC
T163VU
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
|
photodiode die WAFER
Abstract: FVOV6870
Text: T1670P Vishay Semiconductors Silicon PIN Photodiode FEATURES • • • • • • • • • • • • A 21667 DESCRIPTION T1670P ambient light sensor chip is a PIN photodiode with 0.27 mm2 sensitive area, high speed and high photo sensitivity. It is sensitive to visible light much like the human
|
Original
|
PDF
|
T1670P
2002/95/EC
2002/96/EC
T1670P
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
photodiode die WAFER
FVOV6870
|
T1090P
Abstract: FVOV6870 MIL-HDBK-263 VISHAY Optoelectronics
Text: T1090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.53 x 0.53 x 0.185 • High photo sensitivity E • High radiant sensitivity B • Suitable for visible and near infrared radiation
|
Original
|
PDF
|
T1090P
2002/95/EC
2002/96/EC
T1090P
18-Jul-08
FVOV6870
MIL-HDBK-263
VISHAY Optoelectronics
|
T8514
Abstract: T8514VB transistor tip 1050 FVOV6870 MIL-HDBK-263 81129
Text: T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm
|
Original
|
PDF
|
T8514VB
2002/95/EC
2002/96/EC
T8514VB
18-Jul-08
T8514
transistor tip 1050
FVOV6870
MIL-HDBK-263
81129
|
21633 d
Abstract: T8914VA FVOV6870 MIL-HDBK-263
Text: T8914VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm
|
Original
|
PDF
|
T8914VA
2002/95/EC
2002/96/EC
T8914VA
18-Jul-08
21633 d
FVOV6870
MIL-HDBK-263
|
Untitled
Abstract: No abstract text available
Text: T1116P www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity A • High radiant sensitivity
|
Original
|
PDF
|
T1116P
T1116P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|