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    Vishay Semiconductors T8719VA-SF-F

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    T8719VA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T8719VA-SF-F Vishay Semiconductors PHOTO SENSOR Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: T8719VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength: λ = 870 nm


    Original     		PDF T8719VA T8719VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    FVOV6870

    Abstract: MIL-HDBK-263
    Text: T8719VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength: λ = 870 nm


    Original     		PDF T8719VA 2002/95/EC 2002/96/EC T8719VA 18-Jul-08 FVOV6870 MIL-HDBK-263

    Untitled

    Abstract: No abstract text available
    Text: T8719VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength:  = 870 nm


    Original     		PDF T8719VA 2002/95/EC 2002/96/EC T8719VA 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: T8719VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength:  = 870 nm


    Original     		PDF T8719VA 2002/95/EC 2002/96/EC T8719VA 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: T8719VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength: λ = 870 nm


    Original     		PDF T8719VA T8719VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: T8719VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength:  = 870 nm


    Original     		PDF T8719VA 2002/95/EC 2002/96/EC T8719VA 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    FVOV6870

    Abstract: MIL-HDBK-263
    Text: T8719VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength: λ = 870 nm


    Original     		PDF T8719VA 2002/95/EC 2002/96/EC T8719VA 18-Jul-08 FVOV6870 MIL-HDBK-263

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare


    Original     		PDF VMN-SG2200-1502