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    Vishay Semiconductors TS8542VA

    EMITTER IR 850NM 1A DIE
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    TS8542VA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TS8542VA Vishay Semiconductor Opto Division Optoelectronics - Infrared, UV, Visible Emitters - IR EMITTER SMD Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm


    Original     		PDF TS8542VA TS8542VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm


    Original     		PDF TS8542VA TS8542VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm


    Original     		PDF TS8542VA 2011/65/EU 2002/96/EC TS8542VA 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm


    Original     		PDF TS8542VA 2002/95/EC 2002/96/EC TS8542VA 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm


    Original     		PDF TS8542VA TS8542VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare


    Original     		PDF VMN-SG2200-1502