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    FUJITSU GHZ GAAS FET Search Results

    FUJITSU GHZ GAAS FET Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    OPA2137EA/250 Texas Instruments Low Cost FET-Input Operational Amplifier 8-VSSOP Visit Texas Instruments Buy
    OPA2137EA/250G4 Texas Instruments Low Cost FET-Input Operational Amplifier 8-VSSOP Visit Texas Instruments Buy
    OPA2137EA/2K5 Texas Instruments Low Cost FET-Input Operational Amplifier 8-VSSOP Visit Texas Instruments Buy

    FUJITSU GHZ GAAS FET Datasheets Context Search

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    Fujitsu GaAs FET application note

    Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
    Text: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was


    Original     		fcs64 magS22 angS22 Fujitsu GaAs FET application note atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm PDF

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL1500IU-2C Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500
    Text: FUJITSU APPLICATION NOTE - No 008 150-W, 2.11- 2.17 GHz Balanced Compact Amplifier For IMT2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and IMD


    Original     		IMT2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500 PDF

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL1500IU-2C Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B IMT-2000 push pull class AB RF linear L band stub tuner matching
    Text: FUJITSU APPLICATION NOTE - No 009 150-W, 2.11- 2.17 GHz Push-Pull Compact Amplifier For IMT-2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and


    Original     		IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B push pull class AB RF linear L band stub tuner matching PDF

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: understanding thermal basics for microwave power FLL600IQ-3 Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
    Text: FUJITSU APPLICATION NOTE - No 007 60-W, 2.5- 2.7 GHz Push-Pull Amplifier For MMDS Base-Station Application Using The FLL600IQ-3 GaAs FET Device FEATURES • Targeted WCDMA ACPR at 6 W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 60 Watts Pout over entire band


    Original     		FLL600IQ-3 60-Wpush-pull 117mA FUJITSU MICROWAVE TRANSISTOR understanding thermal basics for microwave power Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz PDF

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: class A push pull power amplifier 150w FLL1500IU-2C FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b IMT-2000 push pull class AB RF linear S110 transistor
    Text: FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT-2000 BaseStation Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 150 Watts Pout over entire band


    Original     		IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR class A push pull power amplifier 150w FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b push pull class AB RF linear S110 transistor PDF

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL600IQ-2C 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B IMT-2000 GAAS FET AMPLIFIER f 10Mhz to 2 GHz
    Text: FUJITSU APPLICATION NOTE - No 005 60-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application using the FLL600IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 6 W Average • Easy tuning for Power, WCDMA ACPR and IMD • Over 60 Watts Pout over entire band


    Original     		IMT-2000 FLL600IQ-2C 151mA FUJITSU MICROWAVE TRANSISTOR 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B GAAS FET AMPLIFIER f 10Mhz to 2 GHz PDF

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: Fujitsu GaAs FET application note FLL800IQ-2C 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 IMT-2000 understanding thermal basics for microwave power
    Text: FUJITSU APPLICATION NOTE - No 006 80-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application Using the FLL800IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 8W Average Pout • Easy tuning for Power, WCDMA ACPR and IMD • Over 80 Watts Pout over entire band


    Original     		IMT-2000 FLL800IQ-2C Descriptio10 220mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 understanding thermal basics for microwave power PDF

    fujitsu GHz gaas fet

    Abstract: No abstract text available
    Text: FLM1414-4F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: hadd = 27% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50W


    Original     		FLM1414-4F -46dBc FLM1414-4F FCSI0598M200 fujitsu GHz gaas fet PDF

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet PDF

    1084 fet

    Abstract: fujitsu gaas fet fujitsu GHz gaas fet
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU02LG FSU02LG FCSI0598M200 1084 fet fujitsu gaas fet fujitsu GHz gaas fet PDF

    fujitsu gaas fet

    Abstract: fujitsu GHz gaas fet
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU02LG FSU02LG FCSI0598M200 fujitsu gaas fet fujitsu GHz gaas fet PDF

    FLM1415-3F

    Abstract: No abstract text available
    Text: FLM1415-3F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 34.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 23% (Typ.) Low IM3 = -46dBc@Po = 23.5dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1415-3F -46dBc FLM1415-3F FCSI0598M200 PDF

    FLM1414-4F

    Abstract: fujitsu GHz gaas fet
    Text: FLM1414-4F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1414-4F -46dBc FLM1414-4F FCSI0598M200 fujitsu GHz gaas fet PDF

    fll57

    Abstract: No abstract text available
    Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: hadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to


    Original     		FLL57MK FLL57MK FCSI0598M200 fll57 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM1414-3F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 35dBm Typ. High Gain: G1dB = 6.5dB (Typ.) High PAE: hadd = 27% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50W


    Original     		FLM1414-3F 35dBm -46dBc FLM1414-3F FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM1415-6F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 37.0dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: hadd = 20% (Typ.) Low IM3 = -45dBc@Po = 26.0dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50W


    Original     		FLM1415-6F -45dBc FLM1415-6F FCSI0598M200 PDF

    fujitsu GHz gaas fet

    Abstract: No abstract text available
    Text: FLM1414-3F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 35dBm Typ. High Gain: G1dB = 6.5dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1414-3F 35dBm -46dBc FLM1414-3F FCSI0598M200 fujitsu GHz gaas fet PDF

    Untitled

    Abstract: No abstract text available
    Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to


    Original     		FLL57MK FLL57MK FCSI0598M200 PDF

    fujitsu GHz gaas fet

    Abstract: No abstract text available
    Text: FLM1415-6F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 37.0dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 20% (Typ.) Low IM3 = -45dBc@Po = 26.0dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1415-6F -45dBc FLM1415-6F FCSI0598M200 fujitsu GHz gaas fet PDF

    FSU02LG

    Abstract: v 4836 fujitsu GHz gaas fet
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU02LG FSU02LG FCSI0598M200 v 4836 fujitsu GHz gaas fet PDF

    fujitsu GHz gaas fet

    Abstract: fujitsu gaas fet FSU01LG
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU01LG FSU01LG FCSI0598M200 fujitsu GHz gaas fet fujitsu gaas fet PDF

    452 fet

    Abstract: FSU01LG fujitsu GHz gaas fet fujitsu gaas fet
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=12GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU01LG 12GHz FSU01LG FCSI0598M200 452 fet fujitsu GHz gaas fet fujitsu gaas fet PDF

    fujitsu gaas fet

    Abstract: FLC107WG
    Text: FLC107WG - C-Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: riadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package


    OCR Scan     		FLC107WG FLC107WG FCSI0598M200 fujitsu gaas fet PDF

    fujitsu gaas fet

    Abstract: No abstract text available
    Text: FLM1414-8F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: hadd = 27% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50W


    Original     		FLM1414-8F -46dBc FLM1414-8F FCSI0598M200 fujitsu gaas fet PDF