fll57
Abstract: FLL57MK
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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0.1 j100
Abstract: FLL57MK fll57
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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FLL57MK
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FLL57MK
Abstract: No abstract text available
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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fll57
Abstract: No abstract text available
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: hadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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FCSI0598M200
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FLL57MK
Abstract: fll57 01 j100
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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Untitled
Abstract: No abstract text available
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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FLL57MK
FLL57MK
FCSI0598M200
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FLL57MK
Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.
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FLL810IQ-4C
FLL600IQ-2
FLL400IP-2
FLL300IL-1
FLL200IB-1
FLL300IL-2
FLL200IB-2
FLL300IL-3
FLL200IB-3
FLL57MK
ELM7785-60F
FLL400IP2
flc107
FLK027WG
FLC057WG
FLL357
fll177
FLL357ME
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FLL57MK
Abstract: fll57 fujitsu gaas fet L-band fujitsu gaas fet
Text: FLL57MK _ L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P ^ b = 36.0dBm Typ. High Gain: = 11.5dB (Typ.) High PAE: riadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION
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FLL57MK
FLL57MK
FCSI0598M200
fll57
fujitsu gaas fet L-band
fujitsu gaas fet
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fll57
Abstract: No abstract text available
Text: Data Sheet October 1997 microelectronics group Lucent Technologies Bell Labs Innovations T7901 ISA Single Wide Area Connection ISA-SWAC Device Features • One wide area connection port that can be config ured as a basic rate ISDN TE or NT or as a syn
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T7901
SN74LS32)
SN74LS04)
T7901.
5002b
002fl25b
theT7901
CY7C199.
SN74LS174
fll57
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FLL55
Abstract: FLL100
Text: FILTERS LOW PASS L ea b l e s s S urf ac e M o u n t M. o d e l s -. ^ L o w C ose Fc MHz LOSS = 3 dB (Nom) PASSBAND LOSS < 1 dB (MHz) >35 dB >23 dB 12 24 33 DC-10.7 DC-21.4 DC-30 21 42 58 19 37 51 55 66 77 100 154 DC-50 DC-60 DC-70 DC-92 DC-140 96 115
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DC-10
DC-21
DC-30
DC-50
DC-60
DC-70
DC-92
DC-140
DC-200
DC-300
FLL55
FLL100
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CD 294
Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package
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FLC167WF
FLC167WF
FCSI0598M200
CD 294
FLL357
348dB
FLL400IP-2
FLK102MH-14
hemt low noise die
Fujitsu GaAs FET Amplifier
FLK017XP
FLL120
fujitsu gaas fet
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FLL55
Abstract: FLL100 FLS-330 FLL15 fll57 FLL-770
Text: FILTERS LOW PASS L e a d í .,e s s S u /tF A C fì-iM o i's r M o n t i ,.v i j w C ost Fc MHz) LOSS = 3 dB (Nom) PASSBAND LOSS < 1 dB (MHz) >35 dB >23 dB 12 24 33 DC-10.7 DC-21.4 DC-30 21 42 58 19 37 51 55; 66 77 100 154 DC-50 DC-60 DC-70 DC-92 DC-140
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DC-10
DC-21
DC-30
DC-50
DC-60
DC-70
DC-92
DC-140
DC-200
DC-300
FLL55
FLL100
FLS-330
FLL15
fll57
FLL-770
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