108 to 174 mhz
Abstract: FLK027XP FLK027XV
Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is
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FLK027XP,
FLK027XV
FLK027XV
FCSI0598M200
108 to 174 mhz
FLK027XP
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1278n
Abstract: No abstract text available
Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is
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FLK027XP,
FLK027XV
FLK027XV
1278n
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Untitled
Abstract: No abstract text available
Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is
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FLK027XP,
FLK027XV
FLK027XV
FLK027XP
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FLK027XP
Abstract: FLK027XV
Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is
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FLK027XP,
FLK027XV
FLK027XV
Unit4888
FLK027XP
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Untitled
Abstract: No abstract text available
Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is
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FLK027XP,
FLK027XV
FLK027XV
FCSI0598M200
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FLK027XP
Abstract: GaAs FET HEMT Chips FLK027XV
Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is
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FLK027XP,
FLK027XV
FLK027XV
FLK027XP
FLK027XP
GaAs FET HEMT Chips
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Filtronic
Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15
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FPD3000
FPD2250
FPD1500
FPD1050
FPD750
FPD6836
FPD200
FPD7612
EPA240B
EPA160B
Filtronic
EUDYNA
fpd6836
epa018a
FPD750
ph15 transistor
FLC087XP
FPD3000
FPD7612
FPD1500
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FLK027XP
Abstract: FLK027XV urn 3177 GaAs FET HEMT Chips
Text: FLK027XP, FLK027XV - GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32% (Typ.) Proven Reliability DESCRIPTION
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FLK027XP,
FLK027XV
FLK027XV
FCSI0598M200
FLK027XP
urn 3177
GaAs FET HEMT Chips
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CD 294
Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package
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FLC167WF
FLC167WF
FCSI0598M200
CD 294
FLL357
348dB
FLL400IP-2
FLK102MH-14
hemt low noise die
Fujitsu GaAs FET Amplifier
FLK017XP
FLL120
fujitsu gaas fet
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