Untitled
Abstract: No abstract text available
Text: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F800SG 8M 512Kx16 Smart Voltage
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LH28Fxxx
LH28F800SG
512Kx16)
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Untitled
Abstract: No abstract text available
Text: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX DUAL VOLTAGE LH28F800SUTD 8M 1024Kx8/512Kx16 3V Dual Work
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LH28Fxxx
LH28F800SUTD
1024Kx8/512Kx16)
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SD10
Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX
Text: WSF512K16-XXX HI-RELIABILITY PRODUCT 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • Access Times of 35ns SRAM and 90ns (FLASH) ■ 100,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture
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WSF512K16-XXX
512KX16
120ns
120ns
01HXX
02HXX
01HMX
SD10
SD12
SD13
SD14
SD15
WSF512K16-XXX
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Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES Access Times of 35ns (SRAM) and 90ns (FLASH) 100,000 Erase/Program Cycles Minimum Access Times of 70ns (SRAM) and 120ns (FLASH) Sector Architecture
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WSF512K16-XXX
512KX16
120ns
MIL-STD-883
MIL-PRF-38534
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Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES Access Times of 35ns (SRAM) and 90ns (FLASH) 100,000 Erase/Program Cycles Minimum Access Times of 70ns (SRAM) and 120ns (FLASH) Sector Architecture
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WSF512K16-XXX
512KX16
120ns
ICCx16
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Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES Access Times of 35ns (SRAM) and 90ns (FLASH) 100,000 Erase/Program Cycles Minimum Access Times of 70ns (SRAM) and 120ns (FLASH) Sector Architecture
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WSF512K16-XXX
512KX16
120ns
ICCx16
MIL-STD-883
MIL-PRF-38534
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smd code F18
Abstract: No abstract text available
Text: ACT–SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module CIRCUIT TECHNOLOGY www.aeroflex.com FEATURES 2 – 128K x 8 SRAMs & 2 – 512K x 8 Flash Die in One MCM • Access Times of 25ns SRAM and 60ns (Flash) or 35ns (SRAM) and 70 or 90ns (Flash)
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SF2816
128Kx16
512Kx16
512KX8
MIL-PRF-38534
MIL-STD-883
SCD3853
smd code F18
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Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES Access Times of 35ns SRAM and 90ns (FLASH) 100,000 Erase/Program Cycles Access Times of 70ns (SRAM) and 120ns (FLASH) Sector Architecture Packaging
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WSF512K16-XXX
512KX16
120ns
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Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • Access Times of 35ns SRAM and 90ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture • 8 equal size sectors of 64K bytes each
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WSF512K16-XXX
512KX16
120ns
66-pin,
68-lead,
120ns
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SD10
Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX WSF512K16-XG2X
Text: White Electronic Designs WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES Access Times of 35ns SRAM and 90ns (FLASH) TTL Compatible Inputs and Outputs Access Times of 70ns (SRAM) and 120ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins
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WSF512K16-XXX
512KX16
120ns
120ns
01HXX
02HXX
SD10
SD12
SD13
SD14
SD15
WSF512K16-XXX
WSF512K16-XG2X
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Untitled
Abstract: No abstract text available
Text: ACT–SF512K16 High Speed 512Kx16 SRAM/FLASH Multichip Module CIRCUIT TECHNOLOGY www.aeroflex.com FEATURES • 2 – 512K x 8 SRAMs & 2 – 512K x 8 Flash Die in ■ Packaging – Hermetic Ceramic One MCM ■ Access Times of 25ns SRAM and 60ns (Flash) or
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SF512K16
512Kx16
MIL-PRF-38534
MIL-STD-883
SCD1663
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SD10
Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX
Text: White Electronic Designs WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES Access Times of 35ns SRAM and 90ns (FLASH) TTL Compatible Inputs and Outputs Access Times of 70ns (SRAM) and 120ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins
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WSF512K16-XXX
512KX16
120ns
120ns
01HXX
02HXX
SD10
SD12
SD13
SD14
SD15
WSF512K16-XXX
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WSF2816-39G2UX
Abstract: SD10 SD12 SD13 SD14 SD15 WSF2816-39XX
Text: White Electronic Designs WSF2816-39XX 128KX16 SRAM/512KX16 FLASH MODULE FEATURES Access Times of 35ns SRAM and 90ns (FLASH) Packaging • 66 pin, PGA Type, 1.075" square HIP, Hermetic Ceramic HIP (Package 400) 128Kx16 SRAM 512Kx16 5V FLASH Organized as 128Kx16 of SRAM and 512Kx16 of
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WSF2816-39XX
128KX16
SRAM/512KX16
WSF2816-39G2UX
WSF2816-39H1X
512Kx16
SD10
SD12
SD13
SD14
SD15
WSF2816-39XX
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Untitled
Abstract: No abstract text available
Text: A82DL32x8T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SUPER RAM, A82DL32x8T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8M 512Kx16 Bit) SUPER RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SUPER RAM, A82DL32x8T(U) 32
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A82DL32x8T
Bit/2Mx16
512Kx16
MO-219
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A82DL3228TG-70I
Abstract: A82DL3238U
Text: A82DL32x8T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SUPER RAM, A82DL32x8T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8M (512Kx16 Bit) SUPER RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SUPER RAM, A82DL32x8T(U) 32
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A82DL32x8T
Bit/2Mx16
512Kx16
MO-219
A82DL3228TG-70I
A82DL3238U
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EM39LV800
Abstract: xx55
Text: EM39LV800 8M Bits 512Kx16 Flash Memory SPECIFICATION General Description The EM39LV800 is an 8M bits Flash memory organized as 512K x 16 bits. The EM39LV800 uses 2.7-3.6V power supply for Program and Erase. Featuring high performance Flash memory technology, the EM39LV800 provides a typical Word-Program time of 14 µsec and a
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EM39LV800
512Kx16)
EM39LV800
23/Bldg.
xx55
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Untitled
Abstract: No abstract text available
Text: TT WSF512K16-XXX M/HITE /MICROELECTRONICS 512Kx16 SRAM/FLASH MODULE, SMD 5962-96901 FLASH MEMORY FEATURES • Access Times of 35ns SRAM and 90ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture
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WSF512K16-XXX
512Kx16
120ns
66-pin,
68-lead,
120ns
01HXX
02HXX
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Untitled
Abstract: No abstract text available
Text: WPSF2816G-27PJX M/HITE /MICROELECTRONICS 2Mbit of SRAM & 8Mbit of FLASH 128Kx16 SRAM/512Kx16 FLASH MODULE ADVANCED* FEATURES FLASH MEMORY FEATURES • A ccess Tim es of 20ns S R A M ■ 100,000 Erase/Program Cycles ■ A ccess Tim es of 70ns (Flash) ■ Secto r Architecture
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WPSF2816G-27PJX
128Kx16
SRAM/512Kx16
512Kxl
256Kx8.
64KBytes
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Untitled
Abstract: No abstract text available
Text: a WSF512K16-XXX WHITE /MICROELECTRONICS 512Kx16 SRAM/FLASH MODULE PRELIM INARY * FEATURES FLASH MEMORY FEATURES • A cce ss Tim es of 35nS SR A M and 90nS (FLASH) ■ 10,000 Erase/Program Cycles ■ A cce ss Tim es of 70nS (SR A M ) and 120nS (FLASH) ■
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WSF512K16-XXX
512Kx16
120nS
120nS
512KX
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Untitled
Abstract: No abstract text available
Text: a WHITE /MICROELECTRONICS WSF512K16-XXX 512Kx16SRAM /FLASH MODULE, S M D 5962-96901 FEATURES FLASH M EM ORY FEATURES • A ccess Tim es of 35ns S R A M and 90ns (FLASH) ■ 10,000 E rase/Program Cycles ■ A ccess Tim es of 70ns (SRAM) and 120ns (FLASH)
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WSF512K16-XXX
512Kx16SRAM
120ns
120ns
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Untitled
Abstract: No abstract text available
Text: TT WSF512K16-XXX M/HITE /MICROELECTRONICS 512Kx16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH M E M O R Y FEATURES • Access Tim es o f 35ns SRAM and 90ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Tim es o f 70ns (SRAM) and 120ns (FLASH) ■ S ector A rchitecture
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WSF512K16-XXX
512Kx16
120ns
01HXX
02HXX
01HMX
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SF512K16
Abstract: No abstract text available
Text: WHITE / M I C R O E L E C T R O N I C S W SF512K16-XXX 512Kx16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • A ccess Tim es o f 35ns SRAM and 90ns (FLASH] ■ 10,000 E rase/Program Cycles ■ A ccess Tim es o f 70ns (SRAM) and 120ns (FLASH)
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SF512K16-XXX
512Kx16
120ns
68-lead,
120ns
01HXX
02HXX
01HMX
SF512K16
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FD11O
Abstract: No abstract text available
Text: YZÀ WSF512K16-XXX I/WHITE / M I C R O E L E C T R O N I C S 512Kx16 SRAM/FLASH MODULE P R E L IM IN A R Y • FEATURES FLASH MEMORY FEATURES • A ccess Tim es of 35nS S R A M and 90nS (FLASH) ■ 10,000 Erase/Program Cycles ■ A ccess Tim es of 70nS (SR A M ) and 120nS (FLASH)
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WSF512K16-XXX
512Kx16
120nS
66-pin,
120nS
FD11O
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Untitled
Abstract: No abstract text available
Text: a WHITE /MICROELECTRONICS WPSF2816G-27PJX 2M bit of SRAM & 8M bit of FLASH 128KX16 SRAM/512KX16 FLASH MODULE ADVAN CED* FEATURES FLASH M EM ORY FEATURES • A ccess Tim es of 20ns SRAM ■ 100,000 B a se /P ro g ra m Cycles ■ A ccess Tim es of 70ns (Rash)
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WPSF2816G-27PJX
128KX16
SRAM/512KX16
64KBytes
512Kx16
256Kx8.
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