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    ams OSRAM Group GW JTL6S1.EM-LWL4-XX55-1-50-R33

    LED DURIS E NEUT WHT 4000K 1411
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    DigiKey GW JTL6S1.EM-LWL4-XX55-1-50-R33 Reel 90,000 10,000
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    ams OSRAM Group GW JTLMS1.EM-GWH4-XX55-1-60-R33

    LED DURIS E NEUT WHT 4000K 2835
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    ams OSRAM Group GW JTLPS2.CM-JMKM-XX55-1-150-R33

    LED DURIS E NEUT WHT 4000K 2835
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    GW JTLPS2.CM-JMKM-XX55-1-150-R33 Cut Tape 5,900 1
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    ams OSRAM Group GW JTLPS1.EM-KMLN-XX55-1-150-3-B-R33

    LED DURIS E NEUT WHT 4000K 1411
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    ams OSRAM Group GW JTLPS1.CM-JNKN-XX55-1-150-R33

    LED DURIS E NEUT WHT 4000K 2835
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    Avnet Americas GW JTLPS1.CM-JNKN-XX55-1-150-R33 Reel 8 Weeks 100,000
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    Avnet Asia GW JTLPS1.CM-JNKN-XX55-1-150-R33 12 Weeks 100,000
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    XX55 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DP83816

    Abstract: DP83810
    Text: DP83816 DP83816 10/100 Mb/s Integrated PCI Ethernet Media Access Controller and Physical Layer MacPhyter-II Literature Number: SNLS164D DP83816 10/100 Mb/s Integrated PCI Ethernet Media Access Controller and Physical Layer (MacPHYTER-II ) General Description


    Original     		PDF DP83816 DP83816 SNLS164D DP83810

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    SAMSUNG MCP

    Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
    Text: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.


    Original     		PDF KBC00B7A0M 16Mx16) 4Mx16) 512Kx16) 100pF 111-Ball SAMSUNG MCP MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR CM44-10134-1E CONTROLLER MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90945 Series HARDWARE MANUAL F2MC-16LX 16-BIT MICROCONTROLLER MB90945 Series HARDWARE MANUAL FUJITSU LIMITED PREFACE • Objectives and intended reader Thank you very much for your continued patronage of Fujitsu semiconductor products.


    Original     		PDF CM44-10134-1E 2MC-16LX 16-BIT MB90945 F2MC-16LX F2MC-16LX

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM44-10103-5E 2 F MC-16LX 16-BIT MICROCONTROLLER MB90550A/B Series HARDWARE MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90550A/B Series HARDWARE MANUAL Be sure to refer to the “Check Sheet” for the latest cautions on development.


    Original     		PDF CM44-10103-5E 2MC-16LX 16-BIT MB90550A/B MC-16LX F2MC-16LX

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR CM44-10102-5E CONTROLLER MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90570/A series HARDWARE MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90570/A series HARDWARE MANUAL FUJITSU LIMITED PREFACE • Objectives and Intended Reader Thank you for your interest in Fujitsu semiconductor products.


    Original     		PDF CM44-10102-5E 2MC-16LX 16-BIT MB90570/A -16LX

    W49F020T

    Abstract: W49F020
    Text: W49F020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase operations with


    Original     		PDF W49F020 W49F020 12-volt t21-62365999 W49F020T

    SST39LF200A

    Abstract: SST39LF400A SST39LF800A SST39VF200A SST39VF400A SST39VF800A
    Text: 2 Mbit / 4 Mbit / 8 Mbit x16 Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A SST39LF/VF200A / 400A / 800A3.0 & 2.7V 2Mb / 4Mb / 8Mb (x16) MPF memories Data Sheet FEATURES: • Organized as 128K x16 / 256K x16 / 512K x16


    Original     		PDF SST39LF200A SST39LF400A SST39LF800A SST39VF200A SST39VF400A SST39VF800A SST39LF/VF200A 800A3 SST39LF200A/400A/800A SST39VF200A/400A/800A SST39LF800A SST39VF800A

    transistor SMD t05

    Abstract: transistor SMD t04 sot TCS 2108 SMD t04 SMD Transistor t06 94 transistor SMD t04 transistor SMD t06 MB29F400TA SMD Transistor t07 transistor sot t06
    Text: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL F2MC-16LX FAMILY 16-BIT MICROCONTROLLER MB90595 SERIES HARDWARE MANUAL 1. The products described in this manual and the specifications thereof may be changed without prior notice. To obtain up-to-date information and/or specifications, contact your Fujitsu representative or Fujitsu


    Original     		PDF F2MC-16LX 16-BIT MB90595 15kohms transistor SMD t05 transistor SMD t04 sot TCS 2108 SMD t04 SMD Transistor t06 94 transistor SMD t04 transistor SMD t06 MB29F400TA SMD Transistor t07 transistor sot t06

    39WF800A

    Abstract: SST39WF800A SST39WF800B
    Text: 8 Mbit x16 Multi-Purpose Flash SST39WF800B Data Sheet FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention


    Original     		PDF SST39WF800B S71344-02-000 39WF800A SST39WF800A SST39WF800B

    Untitled

    Abstract: No abstract text available
    Text: Multi-Purpose Flash MPF + SRAM ComboMemory SST32VF201 / SST32VF202 / SST32VF401 / SST32VF402 SST32VF201 / 202 / 401 / 402SRAM (x16) ComboMemories Advance Information FEATURES: • MPF + SRAM ComboMemory – SST32VF201: 128K x16 Flash + 64K x16 SRAM – SST32VF202: 128K x16 Flash + 128K x16 SRAM


    Original     		PDF SST32VF201 SST32VF202 SST32VF401 SST32VF402 402SRAM SST32VF201: SST32VF202: SST32VF401: SST32VF402:

    W42182

    Abstract: R42182 W42181 w4218
    Text: SEOUL SEMICONDUCTOR Z-POWER LED Series Technical Datasheet for X4218X Z-Power series is designed for high current operation and high flux output applications. Features • Super high Flux output and high Luminance Z-Power LED's thermal management perform exceeds


    Original     		PDF X4218X W42182 R42182 W42181 w4218

    siemens vdo

    Abstract: MB91F362GA MB91F369GAPQS1 BYX 13 400 R CRYSTAL CMAC FR51 TDT55 tdt7 lcd timer
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-16401-3E 32-bit RISC Microcontroller CMOS FR50 Family MB91360G Series MB91FV360GA/F362GA/F369GA • DESCRIPTION The Fujitsu MB91360G series is a standard microcontroller containing a wide range of I/O peripherals and bus


    Original     		PDF DS07-16401-3E 32-bit MB91360G MB91FV360GA/F362GA/F369GA MB91360G F0201 siemens vdo MB91F362GA MB91F369GAPQS1 BYX 13 400 R CRYSTAL CMAC FR51 TDT55 tdt7 lcd timer

    cd 6283 ic wiring diagram

    Abstract: DP83810 DP83815 PC99 class 180h transformer
    Text: November 1999 DP83815 10/100 Mb/s Integrated PCI Ethernet Media Access Controller and Physical Layer MacPhyter General Description — Virtual LAN (VLAN) and long frame support — Support for 802.3x Full duplex flow control DP83815 is a single-chip 10/100Mb/s Ethernet Controller


    Original     		PDF DP83815 DP83815 10/100Mb/s 33MHz cd 6283 ic wiring diagram DP83810 PC99 class 180h transformer

    STK 5333

    Abstract: siemens C167 C164CL-8rm C164 C164 instruction set C164CL Transistor hall sq C164SI C16x C167 siemens
    Text: www.infineon.com Microcontrollers C166 Family 16-Bit Single-Chip Microcontroller C164 User’s Manual 1999-09 V 2.0 Edition 1999-09 Published by Infineon Technologies AG, St.-Martin-Strasse 53 D-81541 München Infineon Technologies AG 1999. All Rights Reserved.


    Original     		PDF 16-Bit D-81541 STK 5333 siemens C167 C164CL-8rm C164 C164 instruction set C164CL Transistor hall sq C164SI C16x C167 siemens

    SST32HF1621C

    Abstract: SST32HF1641 SST32HF1641C SST32HF1681 SST32HF3241 SST32HF3241C SST32HF3281
    Text: Multi-Purpose Flash Plus + SRAM ComboMemory SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281 SST32HF1621C / SST32HF1641C / SST32HF3241C SST32HF324 / 32832Mb Flash + 4Mb SRAM, 32Mb Flash + 8Mb SRAM x16 MCP ComboMemories Preliminary Specifications FEATURES:


    Original     		PDF SST32HF1641 SST32HF1681 SST32HF3241 SST32HF3281 SST32HF1621C SST32HF1641C SST32HF3241C SST32HF324 32832Mb SST32HF1621C: SST32HF3241C SST32HF3281

    SST32HF324C

    Abstract: No abstract text available
    Text: Multi-Purpose Flash Plus + SRAM ComboMemory SST32HF324C SST32HF324C32Mb Flash + 4Mb SRAM x16 MCP ComboMemories Preliminary Specifications FEATURES: • ComboMemory organized as: – 2M x16 Flash + 256K x16 SRAM • Single 2.7-3.3V Read and Write Operations


    Original     		PDF SST32HF324C SST32HF324C32Mb Fa0x12-500mic-2 48-BALL S71267-02-000 SST32HF324C

    555H

    Abstract: SST34HF3244
    Text: 32 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory SST34HF3244 / SST34HF3282 / SST34HF3284 SST34HF32x4x32Mb CSF + 4/8/16 Mb SRAM x16 MCP ComboMemory Data Sheet FEATURES: • Flash Organization: 2M x16 or 4M x8 • Dual-Bank Architecture for Concurrent


    Original     		PDF SST34HF3244 SST34HF3282 SST34HF3284 SST34HF32x4x32Mb SST34HF32x4: 24Mbit SST34HF3282: MO-210, 62-lfbga-LS-8x10-400mic-4 62-ball 555H

    SST39VF6401B-70-4C-EKE

    Abstract: SST39VF6401B 555H SST39VF6402B SST39VF640xB
    Text: 64 Mbit x16 Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B SST39VF640xB2.7V 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 4M x16 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical)


    Original     		PDF SST39VF6401B SST39VF6402B SST39VF640xB2 SST39VF6401B 48-tfbga-B1K-8x10-450mic-4 48-BALL S71288-02-000 SST39VF6401B-70-4C-EKE 555H SST39VF6402B SST39VF640xB

    SST32HF1622C

    Abstract: No abstract text available
    Text: Multi-Purpose Flash Plus + SRAM ComboMemory SST32HF1622C SST32HF16x2x / 32x2x / 6482x16/32/64Mb Flash + 4/8Mb SRAM, 32Mb Flash + 8Mb SRAM x16 MCP ComboMemories Preliminary Specifications FEATURES: • ComboMemories organized as: – SST32HF1622C: 1M x16 Flash + 128K x16 SRAM


    Original     		PDF SST32HF1622C SST32HF16x2x 32x2x 6482x16/32/64Mb SST32HF1622C: SST32HF6482 S71299 SST32HF1642 SST32HF1682 SST32HF1622C

    NCC equivalent

    Abstract: No abstract text available
    Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors


    OCR Scan     		PDF TMS29F400T, TMS29F400B 8-BIT/262144 16-BIT SMJS843A 44-Pin 48-Pin 8-Blf/262144 NCC equivalent

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MI C R O S Y S T E MS 32 Megabit FLASH EEPROM DP5Z1MW32PV3 PRELIMINARY DESCRIPTION: The DP5Z1MW32PV3 "VERSA-STACK" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It


    OCR Scan     		PDF DP5Z1MW32PV3 DP5Z1MW32PV3 32PV3 120ns 150ns 200ns 30A180-11

    02P-35

    Abstract: No abstract text available
    Text: Preliminary W29F102 64K X 16 CMOS FLASH MEMORY G E N E R A L D E S C R IP T IO N T h e W 2 9 F 1 0 2 is a 1-m egabit, 5-volt only C M O S tlash m em ory organized as 6 4 K x 16 bits. T h e device can be program m ed and erased in-system with a standard 5 V pow er supply. A 12-volt V pp is


    OCR Scan     		PDF W29F102 12-volt 8SS-3-S770 S52-27 S2i584 S5134, 2719C5QS -2-271975D2 02P-35

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AMD£I AmMCLOOXA 2 or 4 Megabyte 3.0 Volt-only Flash Miniature Card DISTINCTIVE CHARACTERISTICS • 2 or 4 MBytes of addressable Flash memory ■ ■ 2.7 V to 3.6 V, single power supply operation ■ ■ ■ — True interchangeability — Write and read voltage: 3.0 V -10/+20%


    OCR Scan     		PDF 60-pad