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    512KX16 Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    SAMSUNG MCP

    Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
    Text: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.


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    KBC00B7A0M 16Mx16) 4Mx16) 512Kx16) 100pF 111-Ball SAMSUNG MCP MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report PDF

    14Q7

    Abstract: No abstract text available
    Text: K3P4C1000D-D G C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access


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    K3P4C1000D-D /512Kx16) 100ns K3P4C1000D-DC 42-DIP-600 K3P4C1000D-GC 44-SOP-600 K3P4C1000DD 14Q7 PDF

    29F800T

    Abstract: 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12
    Text: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption


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    MX29F800T/B 1Mx8/512Kx16] 70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/08/2000 DEC/04/2000 FEB/12/2001 29F800T 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12 PDF

    cmos static ram 1mx8 5v

    Abstract: No abstract text available
    Text: K5P6480YCM - T085 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 19th 2000 Advanced Information 0.1 -Changed Operating Voltage from 2.4V - 3.0V to 2.7V - 3.3V


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    K5P6480YCM 1Mx8/512Kx16) K5P6480TCM-T085 K5P6480YCM-T085 69-Ball 08MAX cmos static ram 1mx8 5v PDF

    Untitled

    Abstract: No abstract text available
    Text: WE512K16-XG4X 512Kx16 CMOS EEPROM MODULE FEATURES  Access Time of 140, 150, 200ns  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection  Hardware and Software Data Protection • 68 lead, 40mm Hermetic CQFP Package 501


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    WE512K16-XG4X 512Kx16 200ns 128Kx16 MIL-STD-883 MIL-PRF-38534 PDF

    Untitled

    Abstract: No abstract text available
    Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture


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    WSF512K16-XXX 512KX16 120ns ICCx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: WSF2816-39XX 128Kx16 SRAM / 512Kx16 NOR FLASH MODULE  Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation FEATURES  Access Times of 35ns SRAM and 90ns (FLASH)  Weight:  Packaging • WSF2816-39G2UX - 8 grams typical


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    WSF2816-39XX 128Kx16 512Kx16 WSF2816-39G2UX WSF2816-39H1X ICCx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture


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    WSF512K16-XXX 512KX16 120ns ICCx16 MIL-STD-883 MIL-PRF-38534 PDF

    direct rdram rambus 1200

    Abstract: No abstract text available
    Text: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


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    600MHz DL-0118-07 direct rdram rambus 1200 PDF

    da53

    Abstract: DB26 0195c Outline T39
    Text: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other


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    512Kx16/18x32s) 600MHz DL-0118-010 da53 DB26 0195c Outline T39 PDF

    FM23MLD16

    Abstract: 3.3v 1Mx8 static ram high speed
    Text: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16  Configurable as 1Mx8 Using /UB, /LB  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz


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    FM23MLD16 512Kx16 33MHz 512Kx16 FM23MLD16, C8556953BG1, FM23MLD16-60-BG C8556953BG1 FM23MLD16 3.3v 1Mx8 static ram high speed PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62SF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Apr.10.2001 Preliminary 01 Change Logo - Hyundai à Hynix Apr.28.2001


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    HY62SF16806A 512Kx16bit HYSF6806A PDF

    kor 2001

    Abstract: No abstract text available
    Text: HY62LF16804B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM Revision History Revision No History 00 Initial Release Draft Date Remark May.29.2001 Preliminary This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any


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    HY62LF16804B 512Kx16bit 16bits. HYLF6804B 100ns 00/May. kor 2001 PDF

    Untitled

    Abstract: No abstract text available
    Text: K6T8016C3M Family CMOS SRAM Document Title 512Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft June 18, 1999 Advance 1.0 Finalize - Adopt New Code system. - Improve VIN, VOUT max. on A ’ BSOLUTE MAXIMUM RATINGS’from


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    K6T8016C3M 512Kx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F800SG 8M 512Kx16 Smart Voltage


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    LH28Fxxx LH28F800SG 512Kx16) PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 04 Initial Revision History Insert Revised - Reliability Spec Deleted Jul.02.2000 Preliminary


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    HY62UF16804A 512Kx16bit HY62UF16803A HY62UF16804A ChanY62UF16804A HYUF6804A 10/Jan. PDF

    HY29F800T

    Abstract: PSOP 44 Pattern HY29F800B
    Text: HY29F800 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte


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    HY29F800 1Mx8/512Kx16) HY29F800T PSOP 44 Pattern HY29F800B PDF

    SD10

    Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX WSF512K16-XG2X
    Text: White Electronic Designs WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES Access Times of 35ns SRAM and 90ns (FLASH) TTL Compatible Inputs and Outputs Access Times of 70ns (SRAM) and 120ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins


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    WSF512K16-XXX 512KX16 120ns 120ns 01HXX 02HXX SD10 SD12 SD13 SD14 SD15 WSF512K16-XXX WSF512K16-XG2X PDF

    Untitled

    Abstract: No abstract text available
    Text: K3N4V U 1000D-TC(E) CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.)


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    1000D-TC /512Kx16) 100ns 120ns 44-TSOP2-400 PDF

    HYSF6804A

    Abstract: HY62SF16804A HY62SF16804A-C HY62SF16804A-I
    Text: HY62SF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 04 Initial Revision History Insert Revised - Reliability Spec Deleted Jul.02.2000 Preliminary


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    HY62SF16804A 512Kx16bit HY62QF16803A HY62QF16804A Prelimi2SF16804A HYSF6804A HYSF6804A HY62SF16804A-C HY62SF16804A-I PDF

    KM23V8100D

    Abstract: KM23V8100DET KM23V8100DT
    Text: CM OS M ASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES G ENERAL DESCRIPTION • S w itc h a b le o rg a n iz a tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) 5 2 4 ,2 8 8 x 16 (w ord m o de) • F a st a c c e s s tim e : 3 .3 V o p e ra tio n : 1 0 0 n s (M a x .)


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    KM23V81 /512Kx16) 100ns 120ns KM23V8100D 44-TSQP2-400 KM23V8100DET KM23V8100DT PDF

    Untitled

    Abstract: No abstract text available
    Text: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)


    OCR Scan
    AS29LV800 1MX8/512KX16 8/512K 64Kbyte 32Kword write/S29LV800T-120SI AS29LV800T-150SC AS29LV800T-150SI AS29IV800B-80SC AS29D/800B-80SI PDF

    Untitled

    Abstract: No abstract text available
    Text: a WHITE /MICROELECTRONICS WSF512K16-XXX 512Kx16SRAM /FLASH MODULE, S M D 5962-96901 FEATURES FLASH M EM ORY FEATURES • A ccess Tim es of 35ns S R A M and 90ns (FLASH) ■ 10,000 E rase/Program Cycles ■ A ccess Tim es of 70ns (SRAM) and 120ns (FLASH)


    OCR Scan
    WSF512K16-XXX 512Kx16SRAM 120ns 120ns PDF

    FD11O

    Abstract: No abstract text available
    Text: YZÀ WSF512K16-XXX I/WHITE / M I C R O E L E C T R O N I C S 512Kx16 SRAM/FLASH MODULE P R E L IM IN A R Y • FEATURES FLASH MEMORY FEATURES • A ccess Tim es of 35nS S R A M and 90nS (FLASH) ■ 10,000 Erase/Program Cycles ■ A ccess Tim es of 70nS (SR A M ) and 120nS (FLASH)


    OCR Scan
    WSF512K16-XXX 512Kx16 120nS 66-pin, 120nS FD11O PDF