S7AH-01H330
Abstract: S7AH-01H500 V7AH-01H500
Text: NON-ISOLATED DC/DC CONVERTERS 4.5V-32V Input x7AH-01Hxx0 1.2V-5.0V/1A Output Series • Non-Isolated • OCP/SCP • Remote On/Off • Trim Function • Input Under Voltage Lockout UVLO • Low profile package (7.82mm) Description The Bel x7AH-01Hxx0 series are part of the low cost non-isolated DC/DC converter series. These modules use
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V-32V
x7AH-01Hxx0
x7AH-01Hxx0
S7AH-01H330
S7AH-01H500
V7AH-01H500
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SRAH-01H250
Abstract: SRAH-01H330 SRAH-01H500
Text: NON-ISOLATED DC/DC CONVERTER 4.5 Vdc - 32 Vdc Input xRAH-01Hxx0 1.2 Vdc - 5.0 Vdc/1 A Output RoHS Compliant Rev.A • Non-Isolated • Remote On/Off • Trim Function • OCP/SCP • Low Profile Package 7.82 mm • Under-Voltage Lockout (UVLO) • UL60950-1 Recognized (UL/cUL)
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xRAH-01Hxx0
UL60950-1
xRAH-01Hxx0
SRAH-01H250
SRAH-01H330
SRAH-01H500
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Untitled
Abstract: No abstract text available
Text: WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES Read Access Times of 125, 140, 150, 200, 250, 300ns Page Write Cycle Time 10ms Max. JEDEC Approved Packages Data Polling for End of Write Detection Hardware and Software Data Protection
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WME128K8-XXX
128Kx8
300ns
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: WSF128K16-XXX 128Kx16 SRAM / NOR FLASH MODULE SMD 5962-96900* Weight FEATURES Access Times of 35ns (SRAM) and 70ns (FLASH) • WSF128K16-H1X — 13 grams typical • WSF128K16-XG1UX1 — 5 grams typical Access Times of 70ns (SRAM) and 120ns (FLASH)
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WSF128K16-XXX
128Kx16
WSF128K16-H1X
WSF128K16-XG1UX1
120ns
66-pin,
ICCx32
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Untitled
Abstract: No abstract text available
Text: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES Access Times of 125 and 150ns Automatic Page Write Operation MIL-STD-883 Compliant Devices Available Page Write Cycle Time: 10ms Max Packaging: Data Polling for End of Write Detection
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WE32K32-XXX
32Kx32
150ns
MIL-STD-883
66-pin,
120ns
125ns
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Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES Access Times of 35ns (SRAM) and 90ns (FLASH) 100,000 Erase/Program Cycles Minimum Access Times of 70ns (SRAM) and 120ns (FLASH) Sector Architecture
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WSF512K16-XXX
512KX16
120ns
ICCx16
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Untitled
Abstract: No abstract text available
Text: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES Access Times of 125 and 150ns Automatic Page Write Operation MIL-STD-883 Compliant Devices Available Page Write Cycle Time: 10ms Max Packaging: Data Polling for End of Write Detection
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WE32K32-XXX
32Kx32
150ns
MIL-STD-883
66-pin,
120ns
125ns
MIL-PRF-38534
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Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES Access Times of 35ns (SRAM) and 90ns (FLASH) 100,000 Erase/Program Cycles Minimum Access Times of 70ns (SRAM) and 120ns (FLASH) Sector Architecture
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WSF512K16-XXX
512KX16
120ns
ICCx16
MIL-STD-883
MIL-PRF-38534
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smps ic smd 8 pin
Abstract: 12 VOLT 2 AMP smps 6 PIN SMD IC FOR SMPS 3 phase inverter schematic diagram dc ac inverter schematic igbt HIREL UPS circuit diagram IGBT/MOSFET Gate Drive 6 pin smps power control ic 74xxx smps circuit diagram
Text: HCPL-5120, HCPL-5121 and 5962-04204 2.0 Amp Output Current IGBT Gate Drive Hermetically Sealed Optocoupler Data Sheet Description Applications The HCPL-5120 contains a GaAsP LED optically coupled to an integrated circuit with a power output stage. The device is ideally suited for driving power IGBTs and
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HCPL-5120,
HCPL-5121
HCPL-5120
5989-0942EN
smps ic smd 8 pin
12 VOLT 2 AMP smps
6 PIN SMD IC FOR SMPS
3 phase inverter schematic diagram
dc ac inverter schematic igbt
HIREL UPS circuit diagram
IGBT/MOSFET Gate Drive
6 pin smps power control ic
74xxx
smps circuit diagram
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WME128K8-XXX
Abstract: No abstract text available
Text: White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES Read Access Times of 120, 140, 150, 200, 250, 300ns Automatic Page Write Operation JEDEC Approved Packages • Internal Control Timer • 32 pin, Hermetic Ceramic, 0.600" DIP
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WME128K8-XXX
128Kx8
300ns
MIL-STD-883
120ns
06HYX
01HXX
250ns
02HXX
WME128K8-XXX
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SD10
Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX WSF512K16-XG2X
Text: White Electronic Designs WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES Access Times of 35ns SRAM and 90ns (FLASH) TTL Compatible Inputs and Outputs Access Times of 70ns (SRAM) and 120ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins
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WSF512K16-XXX
512KX16
120ns
120ns
01HXX
02HXX
SD10
SD12
SD13
SD14
SD15
WSF512K16-XXX
WSF512K16-XG2X
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SD10
Abstract: SD13 SD14 SD15 WSF128K16-XXX scs 2003
Text: White Electronic Designs WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES TTL Compatible Inputs and Outputs Access Times of 35ns SRAM and 70ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Access Times of 70ns (SRAM) and 120ns (FLASH)
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WSF128K16-XXX
128Kx16
120ns
WSF128K16-XHX
WSF128K16-H1X
WSF128K16-XG1UX1
WSF128K16-XG1TX
66-pin,
SD10
SD13
SD14
SD15
WSF128K16-XXX
scs 2003
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GS6202
Abstract: GS6202RQQF
Text: Dual 250mA C-MOS LDO with Enable Product Description Features The GS6202 series are highly accurate, dual, low noise, CMOS LDO voltage regulators with enable function. The EN function allows the output of each regulator to be turned off independently, resulting in
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250mA
GS6202
GS6202
350mA
GS6202RQQF
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74XXX
Abstract: optocoupler a 3150 HIREL UPS circuit diagram avago suffix hcpl 135
Text: HCPL-5150 & HCPL-5151, DSCC SMD 5962-04205 0.5 Amp Output Current IGBT Gate Drive Hermetic Optocoupler Data Sheet Description Features The HCPL-5150 contains a GaAsP LED optically coupled to an integrated circuit with a power output stage. The device is ideally suited for driving power IGBTs and
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HCPL-5150
HCPL-5151,
HCPL-5150
MIL-PRF-38534
MIL-PRF-38534.
5989-0943EN
AV02-3617EN
74XXX
optocoupler a 3150
HIREL UPS circuit diagram
avago suffix
hcpl 135
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Untitled
Abstract: No abstract text available
Text: a WMF512K8-XXX5 WHITE /MICROELECTRONICS 512Kx8 MONOLITHIC FLASH, SM D 5962-96692 FEATURES • A ccess Tim es of 70, 90, 120, 150ns ■ Organized as 512Kx8 ■ Packaging • 32 pin, Herm etic Ceramic, 0.600" DIP Package 300 • 3 2 lead, Herm etic Ceram ic, 0.400" S O J (Package 101)
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WMF512K8-XXX5
512Kx8
150ns
512Kx8
64KByte
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Untitled
Abstract: No abstract text available
Text: WE32K32-XXX M/HITE /M ICROELECTRONICS 32Kx32 EEPROM MODULE, S M D 5962-94614 FEATURES • A c c e s s T im e s o f 9 0 ,1 2 0 ,1 50ns ■ C o m m ercial, Ind ustrial and M ilita ry Tem perature Ranges ■ M IL-STD -883 Com pliant D e vice s A va ila b le ■ A u to m atic Page W rite Operation
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OCR Scan
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WE32K32-XXX
32Kx32
66-pin,
28Kx8
64Kx16
128Kx8
150ns
120ns
01HXX
02HXX
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Untitled
Abstract: No abstract text available
Text: WMF512K8-XXX5 WHITE /M IC R O E L E C T R O N IC S 512 Kx 8 MONOLITHIC FLASH PRELIM IN ARY* FEATURES • Organized as 512Kx8 ■ Access Times of 70, 9 0 ,1 2 0 and 150nS ■ Com m ercial, Industrial and M ilitary Tem perature Ranges ■ Packaging • 32 pin, Hermetic Ceram ic, 0.600" DIP Package 300
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WMF512K8-XXX5
150nS
512Kx8
01HXX
03HXX
04HXX
01HYX
03HYX
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Untitled
Abstract: No abstract text available
Text: WHITE /M IC R O E L E C T R O N IC S W M S 2 5 6 K 1 6 -X X X 256Kx16 MONOLITHIC SRAM FEATURES • A ccess Times 17, 20, 25, 35ns Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Compliant Devices Available 2V Minim um Data Retention for battery back up operation
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256Kx16
MIL-STD-883
256Kx16
WMS256K16-XXX
AO-17
256Kx
01HXX*
02HXX*
03HXX*
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Untitled
Abstract: No abstract text available
Text: HHITE /M ICRO ELECTRONICS W MF128K8-XXX5 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES • Access Tim es of 60, 70, 9 0 ,1 2 0 ,150ns ■ Organized as 128Kx8 ■ Packaging ■ Commercial, Industrial and M ilita ry Tem perature Ranges • 32 lead, Hermetic Ceramic, 0.400" S O J Package 101
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MF128K8-XXX5
128Kx8
150ns
128Kx8
16KByte
04HXX
05HXX
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Untitled
Abstract: No abstract text available
Text: WSF128K16-XXX •lì Hi-R£LiASIÜTY PRODUCT 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES ■ Com m ercial, Industrial and M ilita ry Tem perature Ranges ■ Access Tim es o f 35ns SRAM and 70ns (FLASH) ■ TTL C om patible Inputs and O utputs ■ Access Tim es o f 70ns (SRAM) and 120ns (FLASH)
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WSF128K16-XXX
128Kx16
120ns
01HXX
01HYX
02HXX
02HYX
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WF1024K32-XXX
Abstract: sMD .v05 smd V05
Text: c WHITE /MICROELECTRONICS a WF1024K32-XXX 1024Kx32 12V FLASH M ODULE FEATURES • 100,000 Erase/Program C ycles ■ ■ Organized as 1024Kx32 ■ Com m ercial, Industrial and M ilita ry T em peratu re Ranges ■ A c c e s s T im es of 1 0 0 ,150nS Packaging:
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WF1024K32-XXX
1024Kx32
150nS
66-pin,
64KBytes
each1024Kx8
1024Kx32
1024K
2048K
WF1024K32-XXX
sMD .v05
smd V05
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Untitled
Abstract: No abstract text available
Text: t t W MS256K16-XDLX WHITE / M I C R O E L E C T R O N I C S 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 pending PRELIMINARY * FEATURES • Access Times 17, 20, 25, 35nS Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Com pliant Devices A vaila b le 2V M inim um Data Retention for battery back up operation
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MS256K16-XDLX
256Kx16
MIL-STD-883
256Kx16
256K16
01HXX'
03HXX'
256KX
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Untitled
Abstract: No abstract text available
Text: C2 WE32K32-XXX M/HITE /M IC R O E L E C T R O N IC S 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES EEPROM MODULES • Access Times of 9 0 ,1 2 0 ,150ns ■ Autom atic Page W rite Operation ■ MIL-STD-883 Compliant Devices Available ■ Page W rite Cycle Time: 10ms Max
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OCR Scan
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WE32K32-XXX
32Kx32
150ns
MIL-STD-883
66-pin,
400-------------------ORGANIZATION,
64Kx16
128Kx8
120ns
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Untitled
Abstract: No abstract text available
Text: T7 512Kx32 SRAM MODULE P R E L IM IN A R Y * FEATURES • ■ WS512K32-XXX M/HITE /M IC R O E LE C TR O N IC S ■ O r g a n i z e d a s 5 1 2 K x 3 2 , U s e r C o n f i g u r a b l e as 1 0 2 4 K x 1 6 o r 2M x8 ■ C o m m e rc ia l, In d u s tria l an d M ilit a r y T e m p e ra tu re R anges
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WS512K32-XXX
512Kx32
120nS
100nS
01HXX*
02HXX*
03HXX*
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