GEX06626
Abstract: Q62703-Q1094 OHR00878 OHR00886
Text: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 486 Area not flat 0.6 0.4 5.7 5.1 Chip position fex06626 Anode 1.8 1.2 29.5 27.5 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 9.0 8.2 7.8 7.5 GEX06626 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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fex06626
GEX06626
TV-s40
OHR00949
OHR01733
GEX06626
Q62703-Q1094
OHR00878
OHR00886
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GEX06260
Abstract: Q62702-P1667 Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1753 Q62702-P1754
Text: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA fex06626 .Neu: Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 1.8 1.2 29 27 0.6 0.4 5.7 5.1 Chip position GEX06260 fexf6626 Cathode Diode Collector (Transistor)
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PDF
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fex06626
GEX06260
fexf6626
OHF02336
OHF02342
OHF02340
GEX06260
Q62702-P1667
Q62702-P1674
Q62702-P1751
Q62702-P1752
Q62702-P1753
Q62702-P1754
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foto transistor
Abstract: OHF02331 p1752 phototransistor 500-600 nm GEX06260 Q62702-P1667 Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1753
Text: SFH 313 SFH 313 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA fex06626 .Neu: Area not flat 1.8 1.2 29 27 Cathode Diode Collector (Transistor) 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 0.8 0.4 2.54 mm spacing 0.6 0.4 0.6 0.4
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Original
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PDF
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fex06626
GEX06260
fexf6626
OHF02336
OHF02342
OHF02340
foto transistor
OHF02331
p1752
phototransistor 500-600 nm
GEX06260
Q62702-P1667
Q62702-P1674
Q62702-P1751
Q62702-P1752
Q62702-P1753
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Q62702-P1667
Abstract: Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1753 Q62702-P1754
Text: SFH 313 SFH 313 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA fexf6626 fex06626 .Neu: Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im
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Original
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PDF
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fexf6626
fex06626
313FA,
Q62702-P1667
Q62702-P1674
Q62702-P1751
Q62702-P1752
Q62702-P1753
Q62702-P1754
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850 nm LED
Abstract: foto transistor SFH213 5 mm 850 nm LED Q62702-P1671 Q62702-P930 SFH213FA
Text: SFH 213 SFH 213 FA SFH 213 SFH 213 FA fexf6626 fex06626 Neu: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit New: Silicon PIN Photodiode with Very Short Switching Time Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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Original
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PDF
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fexf6626
fex06626
850 nm LED
foto transistor
SFH213
5 mm 850 nm LED
Q62702-P1671
Q62702-P930
SFH213FA
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GEX06626
Abstract: Q62703-Q1094
Text: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 486 Area not flat 1.8 1.2 29.5 27.5 9.0 8.2 7.8 7.5 ø5.1 ø4.8 5.9 5.5 0.6 0.4 5.7 5.1 Chip position fex06626 Anode 0.8 0.4 2.54 mm spacing 0.6 0.4 GEX06626 Approx. weight 0.5 g Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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Original
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PDF
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fex06626
GEX06626
con40
OHR00949
OHR01733
GEX06626
Q62703-Q1094
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GEX06626
Abstract: GEX06984 Q62702-P5059 Q62702-P5060
Text: Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter SFH 4591 SFH 4592 Area not flat 1.8 1.2 29.5 27.5 0.6 0.4 5.7 5.1 SFH 4591 Chip position fex06260 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 9.0 8.2 7.8 7.5 GEX06626 Area not flat
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Original
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fex06260
GEX06626
GEX06984
OHR00397
OHF00361
GEX06626
GEX06984
Q62702-P5059
Q62702-P5060
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SFH313
Abstract: SFH313 siemens
Text: SIEMENS A re a not SFH 313 SFH 313 FA fex06626 Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor fla t C o l le c t o r T r a n s i s t o r w e ig h t 0 .5 g fexf6626 A p p ro x . Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified.
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OCR Scan
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PDF
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SFH313
SFH313 siemens
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