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    FET MARK Search Results

    FET MARK Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    OP249GSZ Analog Devices SO-8 MARKED AS \\OP249G\\ Visit Analog Devices Buy
    DAC08ESZ-REEL Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF02CSZ Analog Devices SO-8 MARKED AS \\REF02C\\ Visit Analog Devices Buy
    DAC08ESZ Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF03GSZ Analog Devices SO-8 MARKED AS \\REF03G\\ Visit Analog Devices Buy
    OP221GSZ Analog Devices SO-8 MARKED AS \\OP221G\\ Visit Analog Devices Buy

    FET MARK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Pch MOS FET

    Abstract: US6M2 TUMT6
    Text: US6M2 Transistors 2.5V Drive Nch+Pch MOS FET US6M2 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. (2) (1) (3) 1pin mark 0.2 1.7 zFeatures 1) Nch MOS FET and Pch MOS FET are put in TUMT6 package.


    Original     		PDF 85Max. 15Max. Pch MOS FET US6M2 TUMT6

    GP145

    Abstract: MGF0915A PO36 MGF0915 fet GP145
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES


    Original     		PDF MGF0915A MGF0915A 26dBm 800mA GP145 PO36 MGF0915 fet GP145

    QS6M4

    Abstract: TSMT6 Pch MOS FET m04 fet
    Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOS FET QS6M4 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOS FET with a Nch MOS FET in a single TSMT6 package.


    Original     		PDF

    MGF0914A

    Abstract: fet 4901 0648
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES


    Original     		PDF MGF0914A MGF0914A 26dBm 800mA 50ohm fet 4901 0648

    uhf 1kw amplifier

    Abstract: MGF0916A
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES


    Original     		PDF MGF0916A MGF0916A 23dBm 100mA uhf 1kw amplifier

    MGF0913A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] OUTLINE DRAWING DESCRIPTION Unit:mm Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES


    Original     		PDF MGF0913A MGF0913A 31dBm 18dBm 200mA Unit39 50ohm

    FC654601

    Abstract: FET MARKING CODE FET MARKING
    Text: FC654601 Tentative Total pages page FC654601 Silicon N-channel MOS FET FET1 Silicon N-channel MOS FET (FET2) For switching circuits Internal Connection Marking Symbol : V6 6 5 4 Package Code : SMini6-F3-B FET 1 Absolute Maximum Ratings Ta = 25 °C Parameter


    Original     		PDF FC654601 FC654601 FET MARKING CODE FET MARKING

    R2J20604NP

    Abstract: Nippon capacitors
    Text: R2J20604NP Integrated Driver – MOS FET DrMOS REJ03G1605-0300 Rev.3.00 Feb 09, 2009 Description The R2J20604NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20604NP REJ03G1605-0300 R2J20604NP Nippon capacitors

    QFN56 Datasheet

    Abstract: QFN56 R2J20602NP intel drMOS compliant ic tab 810 Nippon capacitors
    Text: R2J20602NP Integrated Driver – MOS FET DrMOS REJ03G1480-0300 Rev.3.00 Jun 30, 2008 Description The R2J20602NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20602NP REJ03G1480-0300 R2J20602NP QFN56 Datasheet QFN56 intel drMOS compliant ic tab 810 Nippon capacitors

    P-HVQFN56-8x8-0

    Abstract: dc-27 QFN56 Datasheet QFN56 intel drMOS compliant
    Text: Preliminary R2J20605ANP Integrated Driver – MOS FET DrMOS REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Description The R2J20605ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20605ANP REJ03G1821-0300 R2J20605ANP P-HVQFN56-8x8-0 dc-27 QFN56 Datasheet QFN56 intel drMOS compliant

    Nippon capacitors

    Abstract: No abstract text available
    Text: R2J20604NP Integrated Driver – MOS FET DrMOS REJ03G1605-0100 Preliminary Rev.1.00 Nov 30, 2007 Description The R2J20604NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20604NP REJ03G1605-0100 R2J20604NP Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet R2J20608NP R07DS0665EJ0100 Rev.1.00 Jul 20, 2012 Integrated Driver - MOS FET DrMOS Description The R2J20608NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20608NP R07DS0665EJ0100 R2J20608NP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet R2J20609NP R07DS0666EJ0100 Rev.1.00 Jul 20, 2012 Integrated Driver - MOS FET DrMOS Description The R2J20609NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20609NP R07DS0666EJ0100 R2J20609NP

    QFN56 Datasheet

    Abstract: QFN56 R2J20602NP QFN56 footprint Nippon capacitors
    Text: R2J20602NP Integrated Driver – MOS FET DrMOS REJ03G1480-0200 Preliminary Rev.2.00 Nov 30, 2007 Description The R2J20602NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20602NP REJ03G1480-0200 R2J20602NP QFN56 Datasheet QFN56 QFN56 footprint Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet R2J20608NP R07DS0665EJ0100 Rev.1.00 Jul 20, 2012 Integrated Driver - MOS FET DrMOS Description The R2J20608NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20608NP R07DS0665EJ0100 R2J20608NP

    045H8

    Abstract: qfn56 package
    Text: Preliminary Datasheet R2J20609NP R07DS0666EJ0100 Rev.1.00 Jul 20, 2012 Integrated Driver - MOS FET DrMOS Description The R2J20609NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20609NP R07DS0666EJ0100 R2J20609NP 045H8 qfn56 package

    smd z13

    Abstract: of bt 1696 Z12 SMD
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] DESCRIPTION Gate Mark Round Corner The MGF0805A, GaAs FET with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES 4.2 mm • High output power : Po = 36.5 dBm typ.


    Original     		PDF MGF0805A MGF0805A, smd z13 of bt 1696 Z12 SMD

    bt 1696

    Abstract: transistor z14 smd transistor z15 smd z14 smd Z25 SMD MGF0805A BT 1610 circuit smd z13 fet smd transistor SMD Z27
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] DESCRIPTION Gate Mark Round Corner The MGF0805A, GaAs FET with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES 4.2 mm • High output power : Po = 36.5 dBm typ.


    Original     		PDF MGF0805A MGF0805A, bt 1696 transistor z14 smd transistor z15 smd z14 smd Z25 SMD MGF0805A BT 1610 circuit smd z13 fet smd transistor SMD Z27

    transistors mos

    Abstract: No abstract text available
    Text: US5U3 Transistors 2.5V Drive Nch+SBD MOS FET US5U3 zStructure Silicon N-channel MOS FET / Schottky barrier diode zExternal dimensions Unit : mm TUMT5 2.0 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 1.7 (5) 2.1 zFeatures 1) Nch MOS FET and schottky barrier diode


    Original     		PDF 15Max. 85Max. transistors mos

    Untitled

    Abstract: No abstract text available
    Text: Preliminary R2J20605ANP Integrated Driver – MOS FET DrMOS REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Description The R2J20605ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20605ANP REJ03G1821-0300 R2J20605ANP

    QFN56 tray package

    Abstract: R2J20602NP ic tab 810 QFN56 footprint QFN56 Datasheet QFN56 Nippon capacitors R2J20602NP#G3
    Text: R2J20602NP Integrated Driver – MOS FET DrMOS REJ03G1480-0400 Rev.4.00 Feb 09, 2009 Description The R2J20602NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20602NP REJ03G1480-0400 R2J20602NP QFN56 tray package ic tab 810 QFN56 footprint QFN56 Datasheet QFN56 Nippon capacitors R2J20602NP#G3

    QFN56 Datasheet

    Abstract: QFN56 R2J20604NP Nippon capacitors
    Text: R2J20604NP Integrated Driver – MOS FET DrMOS REJ03G1605-0200 Rev.2.00 Jun 30, 2008 Description The R2J20604NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20604NP REJ03G1605-0200 R2J20604NP QFN56 Datasheet QFN56 Nippon capacitors

    093.216

    Abstract: 2sk2974 093.941 transistor 2sk2974
    Text: MITSUBISHI RF POWER MOS FET 2SK2974 SILICON MOS FET TYPE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. INDEX MARK BOTTOM (TOP) FEATURES • High power gain:Gpe>8.4dB


    OCR Scan     		PDF 2SK2974 2SK2974 450MHz 30dBm 600mA 093.216 093.941 transistor 2sk2974

    MGF0913A

    Abstract: 1709-1
    Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD OUTLINE DRAWING DESCRIPTION non - matched ] urnt: Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES


    OCR Scan     		PDF MGF0913A MGF0913A 31dBm 18dBm 200mA 1709-1