MS2532
Abstract: 15544 FE43-0001 tv lg 37 datasheet FC06 SVC6310 MESFET MULTIWATT die
Text: GaAs Foundry Services PROCESS PE3 PE3 V2.00 Features • Typical RF Performance 0.5 µm MBE MESFET Technology for High Power Applications MMICs up to 18 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging •
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6X150)
40IDSS
2/12GHz
680/525mW/mm
20GHz
MS2532
15544
FE43-0001
tv lg 37 datasheet
FC06
SVC6310
MESFET
MULTIWATT die
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FE42-0001
Abstract: SVC6310
Text: GaAs Foundry Services PROCESS HI2 HI2 V2.00 Features • Typical RF Performance 0.5 µm MESFET Technology for High Gain/Low Noise Applications MMICs up to 20 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging
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50IDSS
12/18GHz
25IDSS
25GHz
300um
FE42-0001
SVC6310
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Prospects for a BiCFET III-V HBT Process
Abstract: kopin
Text: Prospects for a BiCFET III-V HBT Process Peter J Zampardi, Mike Sun, Cristian Cismaru, and Jiang Li Abstract—While complementary FETs are routinely available in BiCMOS processes, the successful integration of HBTs with complementary FETs has not been reported. In this work, we
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40-Gbit/s-class
Prospects for a BiCFET III-V HBT Process
kopin
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LNA ku-band
Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)
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11a/b/g)
5988-9866EN
LNA ku-band
ku-band pll lnb
AT-64020
microwave transmitter 10GHz
MGA-725M4
micro-X ceramic Package lna fet
gaas fet 70 mil micro-X Package
HSMS-2850
HSCH-9401
900-1700MHz
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Untitled
Abstract: No abstract text available
Text: GaAs Foundry Services PROCESS PE3 PE3 V2.00 Features • Typical RF Performance FC06 6X150 900 um FET 0.5 |im MBE MESFET Technology for High Power Applications MMICs up to 18 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging
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6X150)
2/12GHZ
2/12GHZ
680/525mW/mm
20GHz
900um
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AWS01
Abstract: aft-186
Text: What mL'HÆ HEWLETT PACKARD Avantek Products General Purpose GaAs FET Amplifier Series 6 to 18 GHz Technical Data AFT 186 X XX U S eries F eatu res D escription Pin C onfiguration • L ow C o st The AFT 186 X XX U product series offers the system designer
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pin diode gamma detector
Abstract: Tuning Varactors UHF schottky diode GaAs p-i-n diodes RF limiter PIN diode impatt diode IMPATT 10 GHz gunn diode 6 GHz PIN diode Microwave zero bias detector diodes
Text: TABLE OF CONTENTS SURFACE MOUNT PRODUCTS PIN DIODES IN SMQ SQUARE SURFACE MOUNT DIVERSITY SWITCHES DC-2 GHz HIGH POWER (4 PACKAGES . 6
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OT-23
OT-23
OT-143
MA4T6365XX
pin diode gamma detector
Tuning Varactors
UHF schottky diode
GaAs p-i-n diodes
RF limiter PIN diode
impatt diode
IMPATT
10 GHz gunn diode
6 GHz PIN diode
Microwave zero bias detector diodes
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Untitled
Abstract: No abstract text available
Text: MwT-0206S-9P2/0206Z-9P2 2.0-6.0 GHz BALANCED AMPLIFIER MODULE MICROWAVE TECHNOLOGY 4268 Solar W ay Fremont, CA 94538 510-651-6700 FAX 510-651-2208 TYPICAL SPECIFICATIONS @ 25°C • 11.0 dB SMALL SIGNAL GAIN • +37 dBm IP3 • 26.0 dBm P-1dB • 4.0 dB NOISE FIGURE
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MwT-0206S-9P2/0206Z-9P2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEMRflS'ì ooiaosa ? ô t M GFX38V9500 9.5~ 10.0GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FX38V 9500 is an internally impedance matched GaAs power FET especially designed fo r use in 9.5 ~ 10.0 GHz band amplifiers. The herm etically sealed metal-ceramic
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GFX38V9500
FX38V
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AF002C1-32
Abstract: AF002C1-39 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443
Text: GaAs MMIC Control FET in SOT 143 03A lp ft DC-2.5 GHz AF002C1-32 Features • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description RF Input Power:
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AF002C1-32
AF002C1-32
AF002C1-39
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
E 212 fet
AS006M2-10
AD004T2-00
AD004T2-11
AK006R2-01
AS006M1-01
S443
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fet ft 25 GHZ
Abstract: fet ft 30 GHZ
Text: Preliminary GaAs SPST 1C FET Switch Non-Reflective DC-6 GHz EBAlpha AS006M1-93 Features • Low DC Power Consumption -93 ■ High Isolation, Non-Reflective ■ Broadband DC-6 GHz ■ Excellent Intermodulation Products ■ Small Low Cost “Chip on Board” Package
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AS006M1-93
AS006M1-93
SN6337
3/99A
fet ft 25 GHZ
fet ft 30 GHZ
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET 3 Bit Digital Attenuator 4,8,16 dB Bits DC-t GHz EHAIpha AT001D3—11 Features • Designed for Military Applications ■ 8 Lead Metal Surface Mount Package ■ Low DC Power Consumption ■ Meets MIL-STD-883 Screening Requirements Description
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AT001D3--1
MIL-STD-883
AT001D3-11
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 38V2228 1 2 .2 — 12.8G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 8 V 2 2 2 8 is an internally impedance matched GaAs power F E T especially designed for use in 12.2 ~ 12.8 GHz band amplifiers. The hermetically sealed metal-ceramic
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38V2228
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fet ft 25 GHZ
Abstract: No abstract text available
Text: GaAs MMIC FET 4 Bit Digital Attenuator 2,4,8,16 dB Bits DC-1 GHz AT001D4-31 Features • Designed for Military Applications ■ Low DC Power Consumption ■ 14 Lead Metal Surface Mount Package ■ Meets M IL -S T D -883 Screening Requirements 2 dB J1 Description
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AT001D4-31
AT001D4-31
fet ft 25 GHZ
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IM-5964-3
Abstract: IM5964-3 5964 fet IM5964-6 IM-5964-6 Avantek Avantek, Inc IM5964 IM-5964-3/-6
Text: AVANTEK ObE INC 0A V A N TEK D | DOObOEO fl | T-39-05 IM-5964-3/-6 3 & 6 Watt, 5.9-6.4 GHz Internally Matched Power GaAs FET Features • • • • • • u m it t Avantek IMFET Package 5.9-6.4 GHz Minimum Bandwidth Internally Matched Input/Output Impedance
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IM-5964-3/-6
T-39-05
IM-5964-3
IM-5964-6
IM5964-3
5964 fet
IM5964-6
Avantek
Avantek, Inc
IM5964
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GRH111
Abstract: GRH111-0 GRH111-27 MGFS52BN2122A GRH111-1
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SVIOFS52BM2122Â 2.1 - 2.2 GHz BAND 160W GaAs FET D E S C R IP TIO N The MGFS52BN2122A is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFS52BN2122Ã
MGFS52BN2122A
17GHz
GF-49
14GHz
GR708â
GR40-1000
GRH111
GRH111-0
GRH111-27
GRH111-1
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Untitled
Abstract: No abstract text available
Text: HE WLE TT-PACKARD/ CMPNTS blE D HEW LETT PACKARD • 4447304 OQDTflTb “Ì7S * H P A ATF-13170 2-16 GHz Low Noise Gallium Arsenide FET 70 mil Package Features Low Noise Figure: 1.0 dB typical at 12 GHz High Associated Gain: 10.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi <ib
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ATF-13170
ATF-13170
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Avantek S
Abstract: S717 IM-4450-3 im4450-6 Avantek F4-450
Text: AVANTEK IN C Ot>E D | i m i l f c i b AVANTEK 1M-4450-3/-6 3 & 6 Watt, 3.7-4.2 GHz Internally Matched Power GaAs FET T-39-05 Avantek IMFET Package Features • • • • • • D O O tDlb b | 4.4-5.0 GHz Minimum Bandwidth Internally Matched Input/Output Impedance
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1M-4450-3/-6
T-39-05
IM-4450-3/-6
IM-4450-3
IM-4450-6
Avantek S
S717
im4450-6
Avantek
F4-450
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siemens gaas fet
Abstract: TMS 1600 marking S221
Text: SIEMENS GaAs FET CLY 2 Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * P at V0=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % out ESD: Type CLY 2 Electrostatic discharge sensitive device,
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Q62702-L96
siemens gaas fet
TMS 1600
marking S221
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AVANTEK transistor
Abstract: ATF-13136-TR1
Text: A V A N T E K INC EOE D AVANTEK i m m 0GQb54b 2 ATF-13136 2-16 GHz Low Noise Gallium Arsenide FET "T -^ -Z S Features Avantek 36 mlcro-X Package1 • Low Noise Figure: 1.2 dB typical at 12 GHz • High Associated Gain: 9.5 dB typical at 12 GHz • High Output Power: 17.5 dBm typical Pi dB
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0GQb54b
ATF-13136
AVANTEK transistor
ATF-13136-TR1
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MWT1171HP
Abstract: No abstract text available
Text: MICROWAVE TECHNOLOGY bbE D • blEMlQG ÜDDDS^b ET7 ■ PIRIdV MwT-11 16 GHz HIGH POWER GaAs FET MicroWave Technology 1-751 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES 1-731 1 WATT POWER OUTPUT AT 12 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY M ETAL/GOLD
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MwT-11
MwT-11
MWT1171HP
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JS8892-AS
Abstract: k-band amplifier fet ft 30 GHZ
Text: TOSHIBA MICROWAVE MICROW AVE POWER GaAs FET S E M IC O N D U C T O R JS8892-AS TECHNICAL DATA FEATURES: • ■ ■ ■ ■ HIGH POWER PldB = 21.0 dBm at f = 23 GHz HIGH GAIN GidB= 6*5 dB at f = 2 3 GHz SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM
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JS8892-AS
23GHz
T-153
JS8892-AS
k-band amplifier
fet ft 30 GHZ
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Untitled
Abstract: No abstract text available
Text: 4613 3 0 3 HUGHES AI R C R A F T CO» HUGHESt m i c r o w a v e p r d t s 67C 00235 0 7 " 3 ? ' t 2 15“ ~t7 D E | 4 t i l 3 3 0 3 00D023S 1 | G aAsf e t PRODUCTS DESCRIPTION Hughes model number C2421H-1500 and C2422H-1500 are single cell and dual cell 15 GHz broadband GaAs power
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00D023S
C2421H-1500
C2422H-1500
50-ohm
025x0
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Untitled
Abstract: No abstract text available
Text: data sheet 0AVANTEK M G A-62100 Low Noise G aA s MM IC A m plifier O ctober, 1989 Features • • • Avantek Chip Outline Output Matched 2 Stage FET Cascade Broadband Performance: 2 - 1 4 GHz Low Noise Figure 50 ft : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz
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MGA-62100
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