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Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEMTflET G 0 1 Ô G 3 2 IDO M G FX38V0510 1 0 .5 ~ ll.0 G H i; BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FX38V 0510 is an internally impedance matched GaAs power F ET especially designed for use in 10.5 ~ 11.0
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FX38V0510
FX38V
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEMRflS'ì ooiaosa ? ô t M FX38V9500 9.5~ 10.0GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FX38V 9500 is an internally impedance matched GaAs power FET especially designed fo r use in 9.5 ~ 10.0 GHz band amplifiers. The herm etically sealed metal-ceramic
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GFX38V9500
FX38V
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Untitled
Abstract: No abstract text available
Text: X BAND INTERNALLY MATCHED GaAs FET MGFXxxVxxxx Series T yp ical Characteristics Type PldB dBm Gtp (dB> f (GHz) M G FX33V9095 M GFX3BV9500 : M GFX36V0005 M GFX3SV0610 , MGFX3CV0717 ^ M GFX35V1722 ; M FX38V9095 : M G FX38Vi»00 M FX38V0005 ' <W IGFXi3 ilV 0Si0
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FX33V9095
GFX3BV9500
GFX36V0005
GFX3SV0610
MGFX3CV0717
GFX35V1722
GFX38V9095
FX38Vi
GFX38V0005
GFX38V1722
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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2SA1115
2SA1235
2SA1235A
2SA1282
2SA1282A
2SA1283
2SA1284
2SA1285
2SA1285A
2SA1286
M52777SP
M54630P
M38881M2
m59320
57704L
M38173M6
SF15DXZ
M34236
m37204m8
54630p
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M FX38V9500 9 .5 ~ 1 0 .Q G H z BAWD 6 W INTERN ALLY MATCHED GaAs FET DESCRIPTION The FX38V9500 is an internally impedance matched GaAs power FET especially designed for use in 9.5 — 10.0 GHz band amplifiers. The hermetically sealed metal-ceramic
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GFX38V9500
MGFX38V9500
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Untitled
Abstract: No abstract text available
Text: ^M ITSUBISHI MGFX38XXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The MGFX38XXXX products are internally impedance matched devices for use in X-band power amplifier applications. • Internally matched to 50Q • High output power P1dB = 6W (TYP) • High linear power gain
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MGFX38XXXX
MGFX38XXXX
38V9095-01
FX38V9095-51
FX38V
FX38V0005-01
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F X 38V 1722 1 1 . 7 - 12.2G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 8 V 1 7 2 2 is an in te rn a lly im pedance m atched GaA s p o w e r F E T especially designed fo r use in 1 1 .7 — 1 2 .2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FX 38V 9095 9 .0 ~ 9 .5 G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FX 38V 9095 is an internally impedance matched GaAs power FE T especially designed for use in 9.0 ~ 9.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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