MGFS52BN2122A
Abstract: No abstract text available
Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS52BN2122A 2.1 - 2.2GHz BAND 160W GaAs FET Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other
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June/2004
MGFS52BN2122A
MGFS52BN2122A
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 – 2.2 GHz BAND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 – 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFS52BN2122A
MGFS52BN2122A
17GHz
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mitsubishi 4a fet
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 – 2.2 GHz BAND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 – 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFS52BN2122A
MGFS52BN2122A
17GHz
mitsubishi 4a fet
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GRH111
Abstract: GRH111-0 GRH111-27 MGFS52BN2122A GRH111-1
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SVIOFS52BM2122Â 2.1 - 2.2 GHz BAND 160W GaAs FET D E S C R IP TIO N The MGFS52BN2122A is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFS52BN2122Ã
MGFS52BN2122A
17GHz
GF-49
14GHz
GR708â
GR40-1000
GRH111
GRH111-0
GRH111-27
GRH111-1
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