FE42-0001
Abstract: SVC6310
Text: GaAs Foundry Services PROCESS HI2 HI2 V2.00 Features • Typical RF Performance 0.5 µm MESFET Technology for High Gain/Low Noise Applications MMICs up to 20 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging
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PDF
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50IDSS
12/18GHz
25IDSS
25GHz
300um
FE42-0001
SVC6310
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MS2532
Abstract: 15544 FE43-0001 tv lg 37 datasheet FC06 SVC6310 MESFET MULTIWATT die
Text: GaAs Foundry Services PROCESS PE3 PE3 V2.00 Features • Typical RF Performance 0.5 µm MBE MESFET Technology for High Power Applications MMICs up to 18 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging •
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Original
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PDF
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6X150)
40IDSS
2/12GHz
680/525mW/mm
20GHz
MS2532
15544
FE43-0001
tv lg 37 datasheet
FC06
SVC6310
MESFET
MULTIWATT die
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Untitled
Abstract: No abstract text available
Text: GaAs Foundry Services PROCESS SI1 SI1 V2.00 Features • • • • • • • Typical RF Performance CKT2 2X100 200 um FET 1.0 |im Technology for Control Device Applications MMICs up to 20 GHz Two qualified fabrication facilities 100 mm wafer diameter
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OCR Scan
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PDF
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2X100)
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Untitled
Abstract: No abstract text available
Text: GaAs Foundry Services PROCESS PE3 PE3 V2.00 Features • Typical RF Performance FC06 6X150 900 um FET 0.5 |im MBE MESFET Technology for High Power Applications MMICs up to 18 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging
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OCR Scan
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PDF
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6X150)
2/12GHZ
2/12GHZ
680/525mW/mm
20GHz
900um
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