rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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K1637
Abstract: K2422 K163 2SK1637 Hitachi DSA001652
Text: 2SK1637, 2SK2422 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
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2SK1637,
2SK2422
O-220FM
2SK1637
K1637
K2422
K163
2SK1637
Hitachi DSA001652
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Hitachi DSA002757
Abstract: No abstract text available
Text: 2SK1636 L , 2SK1636(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline
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2SK1636
Hitachi DSA002757
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2SK1636
Abstract: Hitachi DSA00335
Text: 2SK1636 L , 2SK1636(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline
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2SK1636
Hitachi DSA00335
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Hitachi DSA00279
Abstract: No abstract text available
Text: 2SK1636 L , 2SK1636(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline
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2SK1636
Hitachi DSA00279
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Hitachi DSA002780
Abstract: No abstract text available
Text: 2SK1636 L , 2SK1636(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline
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2SK1636
D-85622
Hitachi DSA002780
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2SK1637
Abstract: K1637 Hitachi DSA002780
Text: 2SK1637, 2SK2422 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM
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2SK1637,
2SK2422
O-220FM
2SK1637
2SK2422
D-85622
K1637
Hitachi DSA002780
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2SK1637
Abstract: K163 K1637 2SK1402 2SK1402A 2SK2422 K2422 Hitachi DSA00395
Text: 2SK1637, 2SK2422 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM
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2SK1637,
2SK2422
O-220FM
2SK1637
2SK1637
K163
K1637
2SK1402
2SK1402A
2SK2422
K2422
Hitachi DSA00395
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2SK1636
Abstract: 2SK1636L-E PRSS0004AE-A
Text: 2SK1636 L , 2SK1636(S) Silicon N Channel MOS FET REJ03G0961-0200 (Previous: ADE-208-1304) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown
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2SK1636
REJ03G0961-0200
ADE-208-1304)
PRSS0004AE-A
PRSS0004AE-B
2SK1636L-E
PRSS0004AE-A
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Hitachi DSA001651
Abstract: No abstract text available
Text: 2SK1636 L , 2SK1636(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
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2SK1636
Hitachi DSA001651
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K1637
Abstract: K163 2SK1637 K2422 m 1305 2SK1402 2SK1402A 2SK2422 DSA003639
Text: 2SK1637, 2SK2422 Silicon N-Channel MOS FET ADE-208-1305 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
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2SK1637,
2SK2422
ADE-208-1305
O-220FM
2SK1637
K1637
K163
2SK1637
K2422
m 1305
2SK1402
2SK1402A
2SK2422
DSA003639
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2SK1637
Abstract: m 1305 2SK1637-E PRSS0003AD-A
Text: 2SK1637 Silicon N Channel MOS FET REJ03G0962-0200 Previous: ADE-208-1305 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
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2SK1637
REJ03G0962-0200
ADE-208-1305)
PRSS0003AD-A
O-220FM)
2SK1637
m 1305
2SK1637-E
PRSS0003AD-A
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2SK1636
Abstract: 15A60 Hitachi DSA00316
Text: 2SK1636 L , 2SK1636(S) Silicon N-Channel MOS FET ADE-208-1304 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
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2SK1636
ADE-208-1304
15A60
Hitachi DSA00316
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2sk1060
Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234
Text: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104
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2SK104
2SK105
2SK162
2SK163
2SK193
2SK195
2SK505
X10679EJCV0SG00
1996P
2sk1060
2SK type
transistor 2sk
transistor 2sk193
2SK105 Datasheet
transistor 2sk162
transistor SST 250
2SK1794
2SK104
2SK2234
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TO220CFM
Abstract: TO220FM HAT1053M 2sk3148 2SK2978 hat2070 TO-220aB rr Hitachi DSA00276 2SK2096 HAT1040T
Text: HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-476G Z 8th. Edition Jun. 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 4 5 6 D D
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HAT1024R
ADE-208-476G
pdf\7420e
HAT1044M
HAT1053M
HAT2053M
HAT2054M
TO220CFM
TO220FM
2sk3148
2SK2978
hat2070
TO-220aB rr
Hitachi DSA00276
2SK2096
HAT1040T
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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Untitled
Abstract: No abstract text available
Text: 2SK1637, 2SK2422 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter
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2SK1637,
2SK2422
2SK1637
15Hitachiâ
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Untitled
Abstract: No abstract text available
Text: 2SK1636 L , 2SK1636(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter
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2SK1636
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K1637
Abstract: 2SK1637
Text: 2SK1637,2SK2422 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • L ow on-resistance • H igh speed sw itching • Low drive current • N o secondary breakdow n • Suitable for sw itching regulator and D C-D C converter
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2SK1637
2SK2422
O-220FM
2SK1637,
2SK2422
K1637
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Untitled
Abstract: No abstract text available
Text: 2SK1636 L , 2SK1636(S) Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • N o secondary breakdow n • Suitable for sw itching regulator and D C -D C converter
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2SK1636
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2SK2829
Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
Text: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586
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2SK2912
2SK2938
2SK2939
2SK2940
2SK2957
2SK2958
2SJ21S
2SJ217
28K1161
2SK1162
2SK2829
Spl 740
2sk1
2SK2728
28K13
2SK151
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buz90af
Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Text: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391
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2SK192
2SK212
2SK241
BF960
BF961
BF964
BF966S
BF981
OT103
BF996
buz90af
P7NB60FP
P4NB80FP
P6N60
P5NB60FP
2SK30A
buz91a
2SK2645
BUZ100
2SK163
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2SK2277
Abstract: 2SK2580 220E4 2SK2015 2SK2014
Text: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro ★2SK1980 N Type 7.0 ★ A2SK2128
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2SK2277
2SK2014
2SK2047
2SK2538
220Fz
2SK1834
220Fro
2SK1980
A2SK2128
220E-0
2SK2580
220E4
2SK2015
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2SK2574
Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
Text: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative
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2SK1868
-220F
2SK1255
O-220E
2SK2578
2SK2579
2SK1967
2SK2659
2SK1033
2SK2574
2SK2574
2SK1259
2SK2377
2SK2659
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