Untitled
Abstract: No abstract text available
Text: R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R8005ANX
O-220FM
R1102A
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R6020ENX
Abstract: No abstract text available
Text: R6020ENX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R6020ENX
O-220FM
R1102A
R6020ENX
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Untitled
Abstract: No abstract text available
Text: R6004ENX Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 980mW ID 4A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6004ENX
980mW
O-220FM
R1102A
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LD1117
Abstract: LD1117 date code LD1117-18 ld1117c JESD97 LD1117D12TR LD1117S12TR LD1117-33
Text: LD1117 series Low drop fixed and adjustable positive voltage regulators Feature summary • Low dropout voltage 1V TYP. ■ 2.85V Device performances are suitable for SCSI-2 active termination ■ Output current up to 800 mA ■ Fixed output voltage of: 1.2V, 1.8V, 2.5V,
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LD1117
O-220
OT-223
800mA
LD1117 date code
LD1117-18
ld1117c
JESD97
LD1117D12TR
LD1117S12TR
LD1117-33
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diode BB102
Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003G
diode BB102
RF TRANSISTOR 10GHZ low noise
Tv tuner Diagram LG RF
VCO 9GHZ 10GHZ
Transistor GaAs FET Low Noise NF 1.6dB
2SC4784F
ultra high frequency FETs or transistors
A08 smd transistor
lg tv electronic diagram
SMD TRANSISTOR fet
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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do2000
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SK1862, 2SK1863 Silicon N Channel MOS FET REJ03G0982-0200 Previous: ADE-208-1329 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator
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2SK1862,
2SK1863
REJ03G0982-0200
ADE-208-1329)
PRSS0003AD-A
O-220FM)
2SK1862
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07N70CF
Abstract: 07n70 AP07N70CF TO-220FM
Text: AP07N70CF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 1.2Ω ID G 7A S Description AP07N70 series are specially designed as main switching devices for
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AP07N70CF
AP07N70
265VAC
O-220FM
O-220FM
07N70CF
07N70CF
07n70
AP07N70CF
TO-220FM
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TM 1628 driver display
Abstract: LD1117 equivalent ST2052 LNBP21 LNBH21 ST2042 diseqc 2.0 vfd controller ST8004 LD1117
Text: Audio drivers for headphone output Operating temp ºC Part number TS482 TS486 TS487 Supply voltage Vcc V Package -40 to 85 -40 to 85 -40 to 85 Voltage regulators SO8 - Mini SO8 - DFN8 SO8 - Mini SO8 - DFN8 SO8 - Mini SO8 - DFN8 Input channels 2 to 5.5 2 to 5.5
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TS482
TS486
TS487
L4931
250mA
400mV
O-220,
FLSTBSTD/1103
TM 1628 driver display
LD1117 equivalent
ST2052
LNBP21
LNBH21
ST2042
diseqc 2.0
vfd controller
ST8004
LD1117
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Untitled
Abstract: No abstract text available
Text: SSM2761F,I N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive avalanche rated BV D DSS 600V Fast switching R DS ON 1.0Ω Simple drive requirement I D 10A S TO-220FM(F) S TO-220CFM(I) G S Description The SSM2761 is specially designed as a main switching device
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SSM2761F
O-220FM
O-220CFM
SSM2761
265VAC
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LD1117-18
Abstract: ld1117c LD1117 LD1117XX12 LD1117XX18 LD1117XX18C LD1117XX25 LD1117XX25C LD1117XX28 LD1117XX30
Text: LD1117xx Low drop fixed and adjustable positive voltage regulators Features • Low dropout voltage 1 V typ. ■ 2.85 V device performances are suitable for SCSI-2 active termination ■ Output current up to 800 mA ■ Fixed output voltage of: 1.2 V, 1.8 V, 2.5 V,
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LD1117xx
O-220
OT-223
LD1117
LD1117-18
ld1117c
LD1117XX12
LD1117XX18
LD1117XX18C
LD1117XX25
LD1117XX25C
LD1117XX28
LD1117XX30
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Untitled
Abstract: No abstract text available
Text: R5016ANX Nch 500V 16A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 0.27Ω ID ±16A PD 50W TO-220FM l Inner circuit l Features 1) Low on-resistance.
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R5016ANX
O-220FM
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R5009FNX
Abstract: No abstract text available
Text: Data Sheet 10V Drive Nch MOSFET R5009FNX Structure Silicon N-channel MOSFET Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1)Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage
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R5009FNX
O-220FM
R1120A
R5009FNX
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RSD130P10
Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Text: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨܼׅDŽ 01 MOSFET Contents
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RUM002N02
RZM002P02
RUE002N02
RZE002P02
RUM002N05
RUE002N05
RZF013P01
RZL025P01
RZR020P01
RW1A013ZP
RSD130P10
rsd220n06
RDR005N25
RP1E090
RSD130P
R6015
RCD040N25
rcd080n25
RSD050N10
R5207AND
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2SK1667
Abstract: 2SK1668
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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2SB1392
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
2SB1392
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HAF2005
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
D-85619
HAF2005
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2SK1761
Abstract: 2SK1762
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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2SB1103
Abstract: 2SB1390 DSA003644
Text: 2SB1390 Silicon PNP Triple Diffused ADE-208-870 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4 kΩ (Typ) 200 Ω (Typ) 3 2SB1390 Absolute Maximum Ratings (Ta = 25°C) Item
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2SB1390
ADE-208-870
O-220FM
2SB1103
2SB1390
DSA003644
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2SB1391
Abstract: 2SB791 DSA003644
Text: 2SB1391 Silicon PNP Triple Diffused ADE-208-871 Z 1st. Edition Sep. 2000 Application Power switching Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter 2 kΩ (Typ) 200 Ω (Typ) 3 2SB1391 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings
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2SB1391
ADE-208-871
O-220FM
2SB1391
2SB791
DSA003644
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2SB1399
Abstract: 2SB955 DSA003644
Text: 2SB1399 Silicon PNP Triple Diffused ADE-208-873 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 1.0 kΩ (Typ) 200 Ω (Typ) 3 2SB1399 Absolute Maximum Ratings (Ta = 25°C) Item
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2SB1399
ADE-208-873
O-220FM
2SB1399
2SB955
DSA003644
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2SK1808
Abstract: 2SK1340 DSA003639
Text: 2SK1808 Silicon N-Channel MOS FET ADE-208-1322 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
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2SK1808
ADE-208-1322
O-220FM
2SK1808
2SK1340
DSA003639
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