F08S60S
Abstract: No abstract text available
Text: F08S60S Stealth2 Diode tm Features 8A, 600V Stealth2 Diode • High Speed Switching Max. trr<30ns @ IF=8A The F08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial
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FFPF08S60S
F08S60S
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Untitled
Abstract: No abstract text available
Text: STEALTH II Rectifier FFP08S60S tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 30ns @ IF=8A • High Reverse Voltage and High Reliability The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP08S60S
FFP08S60S
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F08S60ST
Abstract: No abstract text available
Text: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF08S60ST
FFPF08S60ST
F08S60ST
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f08s60sn
Abstract: diode 8a 600v ffpf08s60sn FFPF08S60SNTU
Text: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF08S60SN
FFPF08S60SN
f08s60sn
diode 8a 600v
FFPF08S60SNTU
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f08s60
Abstract: F08S60S FFD08S60S
Text: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft High Reverse Voltage and High Reliability RoHS Compliant recovery characteristics (trr<30ns). They has half the
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FFD08S60S
f08s60
F08S60S
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f08s60sn
Abstract: TT2202 2202L FFP08S60SNTU f08s60
Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP08S60SN
FFP08S60SN
f08s60sn
TT2202
2202L
FFP08S60SNTU
f08s60
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Untitled
Abstract: No abstract text available
Text: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier ̈ High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft ̈ ̈ High Reverse Voltage and High Reliability ̈ RoHS Compliant recovery characteristics (trr<30ns). They has half the
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FFD08S60S
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F08S60ST
Abstract: FFPF08S60STTU
Text: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF08S60ST
FFPF08S60ST
F08S60ST
FFPF08S60STTU
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diode 8a 600v
Abstract: diode T B 8A
Text: FFP08S60S tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 30 ns @ IF = 8 A The FFP08S60S is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as
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FFP08S60S
FFP08S60S
O-220-2L
diode 8a 600v
diode T B 8A
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Untitled
Abstract: No abstract text available
Text: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF08S60SN
FFPF08S60SN
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f08s60sn
Abstract: TT2202 TT220 F08S f08s60
Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP08S60SN
FFP08S60SN
f08s60sn
TT2202
TT220
F08S
f08s60
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FFP08S60S
Abstract: FFP08S60STU
Text: STEALTH II Rectifier FFP08S60S tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF=8A The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP08S60S
FFP08S60S
FFP08S60STU
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f08s60sn
Abstract: diode 8a 600v
Text: FFP08S60SN tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 25 ns @ IF = 8 A • Max Forward Voltage, VF = 3.4 V (@ TC = 25°C) The FFP08S60SN is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted
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FFP08S60SN
FFP08S60SN
f08s60sn
diode 8a 600v
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Untitled
Abstract: No abstract text available
Text: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF08S60ST
FFPF08S60ST
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FFP08S60S
Abstract: FFP08S60STU F08S60S
Text: FFP08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth 2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial
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FFP08S60S
FFP08S60S
FFP08S60STU
F08S60S
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F08S60S
Abstract: FFPF08S60S FFPF08S60STU
Text: F08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth 2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The F08S60S is stealth2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial
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FFPF08S60S
FFPF08S60S
F08S60S
FFPF08S60STU
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Untitled
Abstract: No abstract text available
Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP08S60SN
FFP08S60SN
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SMD CA2
Abstract: FFD08S60S hyper fast diode fairchild
Text: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft High Reverse Voltage and High Reliability RoHS Compliant recovery characteristics (trr<30ns). They has half the
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FFD08S60S
SMD CA2
hyper fast diode fairchild
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Untitled
Abstract: No abstract text available
Text: F08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth 2 Rectifier • High Speed Switching Max. rrt <30ns @ IF=8A • High Reverse Voltage and High Reliability • Avalanche Energy Rated The F08S60S is stealth2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast
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FFPF08S60S
FFPF08S60S
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F08S60S
Abstract: f08s60
Text: F08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth 2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The F08S60S is stealth2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial
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FFPF08S60S
FFPF08S60STU
F08S60S
f08s60
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f08s60
Abstract: FFP08S60S F08S60S
Text: FFP08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth 2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial
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FFP08S60S
FFP08S60STU
f08s60
F08S60S
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F08S60S
Abstract: F08S
Text: FFP08S60S Stealth2 Diode tm Features 8A, 600V Stealth2 Diode • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial
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FFP08S60S
F08S60S
F08S
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F08S60S
Abstract: ffp08s60stu FFP08S60S
Text: FFP08S60S Stealth2 Diode tm Features 8A, 600V Stealth2 Diode • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial
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FFP08S60S
FFP08S60S
F08S60S
ffp08s60stu
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F08S60SN
Abstract: FFP08S60SNTU FFP08S60SN TO220-2L diode 8a 600v C200300
Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP08S60SN
FFP08S60SN
F08S60SN
FFP08S60SNTU
TO220-2L
diode 8a 600v
C200300
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