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    F08S60ST Search Results

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    F08S60ST Price and Stock

    Flip Electronics FFPF08S60STTU

    DIODE GEN PURP 600V 8A TO220
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    DigiKey FFPF08S60STTU Tube 31,000 1,000
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    onsemi FFPF08S60STU

    DIODE GEN PURP 600V 8A TO220F-2L
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    DigiKey FFPF08S60STU Tube 5,270 1
    • 1 $1.87
    • 10 $1.191
    • 100 $0.8013
    • 1000 $0.58037
    • 10000 $0.48596
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    Avnet Americas FFPF08S60STU Tube 4 Weeks 628
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    • 10000 $0.52628
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    Rochester Electronics FFPF08S60STU 13,300 1
    • 1 $0.5814
    • 10 $0.5814
    • 100 $0.5465
    • 1000 $0.4942
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    onsemi FFPF08S60STTU

    DIODE GEN PURP 600V 8A TO220F-2L
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    DigiKey FFPF08S60STTU Tube
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    Avnet Americas FFPF08S60STTU Tube 0 Weeks, 2 Days 1,021
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    Newark FFPF08S60STTU Bulk 400
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    Bristol Electronics FFPF08S60STTU 950
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    Flip Electronics FFPF08S60STTU 31,000
    • 1 $0.49
    • 10 $0.49
    • 100 $0.49
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    Fairchild Semiconductor Corporation FFPF08S60STU

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    Bristol Electronics FFPF08S60STU 31
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    F08S60ST Datasheets Context Search

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    F08S60ST

    Abstract: No abstract text available
    Text: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFPF08S60ST FFPF08S60ST F08S60ST

    F08S60ST

    Abstract: FFPF08S60STTU
    Text: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFPF08S60ST FFPF08S60ST F08S60ST FFPF08S60STTU

    Untitled

    Abstract: No abstract text available
    Text: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFPF08S60ST FFPF08S60ST