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onsemi FFPF08S60SNTU DIODE GEN PURP 600V 8A TO220F-2L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FFPF08S60SNTU	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	FFPF08S60SNTU	Tube		4 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	FFPF08S60SNTU	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Fairchild Semiconductor Corporation FFP08S60SN RECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 8A, 600V V(RRM), SILICON, TO-220AC (Also Known As: F08S60SN)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FFP08S60SN		250			1 $0.9 10 $0.9 100 $0.42 1000 $0.42 10000 $0.42	Buy Now
Fairchild Semiconductor Corporation FFPF08S60SNTU 8A, 600V, STEALTH II Diode
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	FFPF08S60SNTU		82		1	1 $0.5104 10 $0.5104 100 $0.4798 1000 $0.4338 10000 $0.4338	Buy Now
ComSIT USA	FFPF08S60SNTU		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

F08S60SN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
f08s60sn Abstract: diode 8a 600v ffpf08s60sn FFPF08S60SNTU Text: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	PDF	FFPF08S60SN FFPF08S60SN f08s60sn diode 8a 600v FFPF08S60SNTU
f08s60sn Abstract: TT2202 2202L FFP08S60SNTU f08s60 Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	PDF	FFP08S60SN FFP08S60SN f08s60sn TT2202 2202L FFP08S60SNTU f08s60
Untitled Abstract: No abstract text available Text: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	PDF	FFPF08S60SN FFPF08S60SN
f08s60sn Abstract: TT2202 TT220 F08S f08s60 Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	PDF	FFP08S60SN FFP08S60SN f08s60sn TT2202 TT220 F08S f08s60
f08s60sn Abstract: diode 8a 600v Text: FFP08S60SN tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 25 ns @ IF = 8 A • Max Forward Voltage, VF = 3.4 V (@ TC = 25°C) The FFP08S60SN is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted	Original	PDF	FFP08S60SN FFP08S60SN f08s60sn diode 8a 600v
Untitled Abstract: No abstract text available Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	PDF	FFP08S60SN FFP08S60SN
F08S60SN Abstract: FFP08S60SNTU FFP08S60SN TO220-2L diode 8a 600v C200300 Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	PDF	FFP08S60SN FFP08S60SN F08S60SN FFP08S60SNTU TO220-2L diode 8a 600v C200300