F08S60S
Abstract: No abstract text available
Text: F08S60S Stealth2 Diode tm Features 8A, 600V Stealth2 Diode • High Speed Switching Max. trr<30ns @ IF=8A The F08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial
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FFPF08S60S
F08S60S
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GAAS FET AMPLIFIER for optical receiver
Abstract: transimpedance amplifier F0100504B F0321818M F0832483T FET differential amplifier circuit
Text: F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier 02.09.02 Features F0100504B - 2.2kΩ high transimpedance - 29dB gain 3.3V/5V 2.5Gb/s NRZ Receiver - Low noise typ.6pΑ/√Ηz@100MHz Transimpedance Amplifier - Typical 1900MHz O/E Bandwidth - Over 25dB wide dynamic range
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F0100504B
100MHz)
1900MHz
OC-48/STM-16
F0100504B
OC-48/STM-16,
MIL-STD-883C
GAAS FET AMPLIFIER for optical receiver
transimpedance amplifier
F0321818M
F0832483T
FET differential amplifier circuit
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Untitled
Abstract: No abstract text available
Text: STEALTH II Rectifier FFP08S60S tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 30ns @ IF=8A • High Reverse Voltage and High Reliability The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP08S60S
FFP08S60S
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F08S60ST
Abstract: No abstract text available
Text: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF08S60ST
FFPF08S60ST
F08S60ST
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f08s60sn
Abstract: diode 8a 600v ffpf08s60sn FFPF08S60SNTU
Text: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF08S60SN
FFPF08S60SN
f08s60sn
diode 8a 600v
FFPF08S60SNTU
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f08s60
Abstract: F08S60S FFD08S60S
Text: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft High Reverse Voltage and High Reliability RoHS Compliant recovery characteristics (trr<30ns). They has half the
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FFD08S60S
f08s60
F08S60S
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f08s60sn
Abstract: TT2202 2202L FFP08S60SNTU f08s60
Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP08S60SN
FFP08S60SN
f08s60sn
TT2202
2202L
FFP08S60SNTU
f08s60
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Untitled
Abstract: No abstract text available
Text: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier ̈ High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft ̈ ̈ High Reverse Voltage and High Reliability ̈ RoHS Compliant recovery characteristics (trr<30ns). They has half the
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FFD08S60S
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F08S60ST
Abstract: FFPF08S60STTU
Text: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF08S60ST
FFPF08S60ST
F08S60ST
FFPF08S60STTU
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PREAMPLIFIER TRANSIMPEDANCE optic fet
Abstract: F0100406B amplifier transimpedance TRANSIMpedance Amplifier F0100504B F0321818M F0831252T F0832483T F0100406
Text: F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier 03.05.27 Features F0100406B - 5kΩ high transimpedance - 30dB high gain 3.3V 1.25Gbit/s NRZ Receiver - Low noise typ.3.5pΑ/√Ηz@100MHz Transimpedance Amplifier - Typical 900MHz O/E Bandwidth - Over 30dB wide dynamic range
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F0100406B
25Gbit/s
100MHz)
900MHz
25Gbit/s)
F0100406B
25Gbit/s
MIL-STD-883C
PREAMPLIFIER TRANSIMPEDANCE optic fet
amplifier transimpedance
TRANSIMpedance Amplifier
F0100504B
F0321818M
F0831252T
F0832483T
F0100406
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diode 8a 600v
Abstract: diode T B 8A
Text: FFP08S60S tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 30 ns @ IF = 8 A The FFP08S60S is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as
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FFP08S60S
FFP08S60S
O-220-2L
diode 8a 600v
diode T B 8A
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agc ic
Abstract: No abstract text available
Text: F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier 03.05.27 Features F0100406B - 5kΩ high transimpedance - 30dB high gain 3.3V 1.25Gbit/s NRZ Receiver - Low noise typ.3.5pΑ/√Ηz@100MHz Transimpedance Amplifier - Typical 900MHz O/E Bandwidth - Over 30dB wide dynamic range
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F0100406B
25Gbit/s
100MHz)
900MHz
25Gbit/s)
F0100406B
MIL-STD-883C
agc ic
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Untitled
Abstract: No abstract text available
Text: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF08S60SN
FFPF08S60SN
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f08s60sn
Abstract: TT2202 TT220 F08S f08s60
Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP08S60SN
FFP08S60SN
f08s60sn
TT2202
TT220
F08S
f08s60
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f08s60sn
Abstract: diode 8a 600v
Text: FFP08S60SN tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 25 ns @ IF = 8 A • Max Forward Voltage, VF = 3.4 V (@ TC = 25°C) The FFP08S60SN is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted
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FFP08S60SN
FFP08S60SN
f08s60sn
diode 8a 600v
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Untitled
Abstract: No abstract text available
Text: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF08S60ST
FFPF08S60ST
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Untitled
Abstract: No abstract text available
Text: F08S60S 8 A, 600 V, STEALTH II Diode Features Description • Stealth Recovery trr = 30 ns @ IF = 8 A The F08S60S is STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as
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FFPF08S60S
FFPF08S60S
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FFP08S60S
Abstract: FFP08S60STU F08S60S
Text: FFP08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth 2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial
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FFP08S60S
FFP08S60S
FFP08S60STU
F08S60S
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marking code maxim label
Abstract: No abstract text available
Text: P roduct S h ír c a t io n s Integrated C ircuitsQoup LH28F008SftR-85 8M F]ash M em o ry 1M fc8 H o d elN o IÜ F08S50) Spec No. : EL105019 Issue D ate: A u g u s t3 1 ,1 9 9 8 SHARP F08S50 # H a n d le this document carefully for it contains material protected by international
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LH28F008SftR-85
F08S50)
EL105019
LHF08S50
LH28F008SAR-85
marking code maxim label
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Untitled
Abstract: No abstract text available
Text: SHARP February 1997 FLASH MEMORY LH28F008SAHR-85 Ver. 2.0E SHARP CORPORATION Engineering Department 2 Flash Memory Development Center Tenri Integrated Circuits 1C Group I L HF 0 8 S 1 6 1 CONTENTS 1 FEATURES 2 2 PRODUCT OVERVIEW 3 3 PRINCIPLES OF OPERATION
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LH28F008SAHR-85
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386SL
Abstract: E0000 LH28F008SA LH28F008SAT-85 LHF08S49
Text: P l« m T S M < 1 1 1 C W i\S liuca;io.l Iranf- Croup LH28FD08SAJ-85 8M Rash Memory (Model No.: F08S49 Spec No.: EL105017 Issue Date: August 31, 1998 SHARP F08S49 • H a n d le this document carefully for it contains material protected by international
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LH28F008SAT-85
LHF08S49)
BJ05017
LHF08S49
386SL
E0000
LH28F008SA
LH28F008SAT-85
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80386SL microprocessor features
Abstract: 82360SL 80386sl intel 80386SL AH 36
Text: I LHF 0 8 S 1 6 LH28F008SAHR-85 8 MBIT 1 MBIT x 8 FLASH MEMORY 1. FEATURES •High-Density Symmetrically Blocked Architec ture - Sixteen 64 KByte Blocks • Very High-Performance Read - 85 ns Maximum Access Time • SRAM-Compatible Write Interface •Extended Cycling Capability
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LH28F008S
40-Lead
80386SL microprocessor features
82360SL
80386sl
intel 80386SL
AH 36
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1N5498
Abstract: CA542 AP6KE91A CGJ-1 DF06S 214 H AG 48 2KBP10M I1404 P6KE200 602 CA-592 BZWO4P
Text: NUMERICAL INDEX 1.5KA6.8.A .564 1.5KE22C.CA. 592 1.5KE170.A. 592 1N4383GP. 1.5KA7.5.A.564 1.5KE24.A.592 1ÆKE170C.CA.592 1N4384GP.244
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5KA10
5KA11
5KA12
5KA13
5KA15
5KA16
5KA18
5KA20
5KA22
5KA24
1N5498
CA542
AP6KE91A
CGJ-1
DF06S 214 H
AG 48 2KBP10M
I1404
P6KE200 602
CA-592
BZWO4P
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F02S
Abstract: bd4448 D4148
Text: IIAIEt SURFACE MOUNT SWITCHING DIODES 350 mW SWITCHING DIODES/TO-236 Device Type P eak Reverse Voltage VRM : V V Marking Code : BAS 16 8A V 70 BAV99 B AW 56 BAL99 IM B D 4148 IM B D 4448 A6 JJ JE JD JF A2 A3 O P E R A T IN G /S TO R A G E TE M P E R A TU R E R A N G E -65°C to +175°C
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DIODES/TO-236
BAV99
BAL99
DF005S
DF04S
SDF01
F02S
bd4448
D4148
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