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    F 630 TRANSISTOR Search Results

    F 630 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    F 630 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC338N

    Abstract: BC328 BC338 2BC328
    Text: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC338. N E K


    Original     		PDF BC328 -800mA. -100mA) BC338. -100mA -500mA, -50mA -300mA -10mA, 100MHz BC338N BC328 BC338 2BC328

    BC328

    Abstract: BC338 2BC338
    Text: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 VCE=1V, Ic=100mA . For Complementary with PNP type BC328. N E K G


    Original     		PDF BC338 800mA. 100mA) BC328. 00TER 100mA 500mA, 300mA -10mA, 100MHz BC328 BC338 2BC338

    BC337

    Abstract: BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC327 45V 800mA NPN Transistor BC337 45V 800mA f 630 TRANSISTOR hFE-100 BC327
    Text: SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 VCE=1V, Ic=100mA . For Complementary with PNP type BC327. N E K G


    Original     		PDF BC337 800mA. 100mA) BC327. 00TTER 100mA 500mA, 300mA 100MHz BC337 BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC327 45V 800mA NPN Transistor BC337 45V 800mA f 630 TRANSISTOR hFE-100 BC327

    BC327

    Abstract: BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note
    Text: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC337. MAXIMUM RATING (Ta=25


    Original     		PDF BC327 -800mA. -100mA) BC337. -100mA -500mA, -50mA -300mA -10mA, 100MHz BC327 BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・High Current : IC=800mA. ・DC Current Gain : hFE=100～630 VCE=1V, Ic=100mA . ・For Complementary with PNP type BC328. MAXIMUM RATING (Ta=25℃)


    Original     		PDF 800mA. 100mA) BC328. BC338 100mA 500mA, 300mA -10mA, 100MHz

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・High Current : IC=-800mA. ・DC Current Gain : hFE=100～630 VCE=-1V, Ic=-100mA . ・For Complementary with NPN type BC338.


    Original     		PDF -800mA. -100mA) BC338. BC328 -100mA -500mA, -50mA -300mA -10mA, 100MHz

    2N3904 SOT-23 MARKING CODE

    Abstract: TO226AA Philips TO-92 MARKING CODE BC327 NATIONAL SEMICONDUCTOR AGt marking code nte 2n3904 DALLAS SEMICONDUCTOR 2501 to-226aa BC547C SOT23 NATIONAL SEMICONDUCTOR MARKING CODE sot
    Text: Transistors Manufacturer’s Code Log AGT ANA ADV AVX BNS CRY DLS Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Bourns Crydom Company Dallas Semiconductor EPC FSC FJS GIS HVP IRF INT EPCOS Fairchild Semiconductor Fuji Semiconductor General Semiconductor


    Original     		PDF 751B-SO-16) 2N5485 2N5486 O-226AA) 2N3904 SOT-23 MARKING CODE TO226AA Philips TO-92 MARKING CODE BC327 NATIONAL SEMICONDUCTOR AGt marking code nte 2n3904 DALLAS SEMICONDUCTOR 2501 to-226aa BC547C SOT23 NATIONAL SEMICONDUCTOR MARKING CODE sot

    rf630

    Abstract: IRF630 MOTOR CONTROL CIRCUIT
    Text: *57 S G S -T H O M S O N IR F 630 ilLHCTIKMDe IRF630FI N - CHANNEL ENHANCEMENT MODE _ POWER MQS TRANSISTOR PR EL IM IN A R Y D A T A T YPE IRF630 IRF630FI • . . ■ ■ V dss R DS on Id 200 V 200 V < 0.4 a < o.4 a 10 A 6 A TYPICAL RDS(on) = 0.25 Q


    OCR Scan     		PDF IRF630FI IRF630 rf630 IRF630 MOTOR CONTROL CIRCUIT

    KS621K3010

    Abstract: powerex ks62 14B21
    Text: 7294621 POVIE REX IN C 7?^ ?1 □ D I]Q i:i l l ~ ~ Y Single Darlington TRANSISTO R Modules Dim A B C D E F G H J K L M N Inches 4.260 Max 3.660 ±.012 2.44 Max 1.89 ±.012 1.00 Max 1.42 Max 1.141 .827 .512 .354 .630 .256 .256 Dia 4 Millimeters 108 Max 93 ±0.3


    OCR Scan     		PDF KS62453010 Fee010 KS62453010 KS621K3010 KS621K3010 powerex ks62 14B21

    bc857 to 92

    Abstract: to236 2N2222A D41D4 pN3644 BCX79 national PN2222A
    Text: Devices V CE0 su*t (Volts) Min PUP NPN 45 BCX59 fT@ lC II f e @ I c Min Max mA (MHz) Min mA NF (HB) Max Pp (Arab) Paekage (mW) @25°C BC857 100 125 800 2.0 300 Typ 10 10 TO-236* 350 BC860 100 125 800 2.0 300 Typ 10 3.0 TO-236* 350 BCX71 100 120 630 2.0 125 Typ


    OCR Scan     		PDF BC857 BC860 BCX71 O-236* T0-92 T0-202 BCX59 bc857 to 92 to236 2N2222A D41D4 pN3644 BCX79 national PN2222A

    MOSFET IRF 630

    Abstract: IRF630 f630 IRF630R 633R
    Text: S H A R R IS IR F 630/631/632/633 IRF630R/631R/632R/633R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 2 0 A B TOP VIEW • 8.0A and 9.0A , 150 V - 2 0 0 V • r 0 s ° n = 0 .4 Î Î and 0 .6 Î Î • Single Puise A valanche Energy R ated*


    OCR Scan     		PDF IRF630R/631R/632R/633R IRF630, IRF631, IRF632, IRF633 IRF630R, IRF631R, IRF632R IRF633R MOSFET IRF 630 IRF630 f630 IRF630R 633R

    BF 414

    Abstract: to92d bc 640 ce bc 630
    Text: Transistoren Transistors GaAs MMICs Breitbandverstärker Type GaAs MMICs Broadband Amplifiers Maximum Ratings Characteristics {TA = 25 °C lap mA G dB 2 160 2 160 Vs V Ptot • CGY 21 6.0 ■ CGY 31 6.0 W F ' dB 21.0 1.5 3.9 19 100 . 900 TO-12 48 18.0 2.0


    OCR Scan     		PDF O-92d BE35b05 000370b BF 414 to92d bc 640 ce bc 630

    SO930R

    Abstract: BCF81R dxdz SO5401R SO1893 bcf81 ET 3005 BCW66R 3n08 BCW72R
    Text: y g en eral purpose transistors transistors usage général THOMSON-CSF Types M axim um Characteristics at 25°C ratings NPN PN P p tot V C EO h21E @ •c VCE(sat) @ Ic/'B *T C22b min IMHz) max (pF) ^CER* min max max f B ‘ off 1 kHz max nax Marking* Pin out


    OCR Scan     		PDF BCW31IR) 54001R) SO930R BCF81R dxdz SO5401R SO1893 bcf81 ET 3005 BCW66R 3n08 BCW72R

    PCOT

    Abstract: BCW67f BCW66 bss65 BSV62 BCW65A BCW65B BCW65C BCW66F BCW66G
    Text: SOT-23 TABLE 2 -S IL IC O N PLANAR MEDIUM POWER TRANSISTORS Devices in this table are suitable for medium current, medium power sw itching and general purpose applications. Ratings and Characteristics at 25 °C ambient temperature. _ _ _ _ _ V /lavimnm □


    OCR Scan     		PDF OT-23 BCW65A BCW65B BCW65C BCW66F BCW66G BCW66H BFQ31/31A 2-00t BFS17/17R PCOT BCW67f BCW66 bss65 BSV62

    BFS98

    Abstract: ZTX452 ZTX750 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451 ZTX453
    Text: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, A ND GENERAL PURPOSE


    OCR Scan     		PDF ZTX453 ZTX452 ZTX552 MPSA06 MPSA56 BC546P BC556P ZTX451 MPSA55 ZTX750 BFS98 BC556P BFS61 MPSA56

    delay line ms-19

    Abstract: D 1414 transistor HCPL 8200 HSSR-8060 HCPL-0703 8060 transistor
    Text: q i Single Channel 1 MBd Transistor Output Optocoupler 6N135/6 Type Part Number 300 mil DIP 6N135 HCPL-0500 HCNW135 / 6N136 HCPL-0501 HCNW136 / HCPL-4502I1] HCPL-0452M1 HCNW4502I1! / HCPL-4503H] HCPL-0453I1! HCNW450311! / HCPL-4504I1] HCPL-045411! HCNW450411!


    OCR Scan     		PDF 6N135/6 6N135 HCPL-0500 HCNW135 6N136 HCPL-0501 HCNW136 HCPL-4502I1] HCPL-0452M1 HCNW4502I1! delay line ms-19 D 1414 transistor HCPL 8200 HSSR-8060 HCPL-0703 8060 transistor

    BCX79-9

    Abstract: BF493 BCX78-10 BCX78-7 BCX78-8 BCX78-9 BCX79 BCX79-10 BCX79-7 BCX79-8
    Text: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25*C, Unless Otherwise Specified) Maximum Ratings Type No. BCX78-10 ^ceo ^CEO ^EBO Icao Po (V) Min (V) Min (V) Min (W) (A) 0Tc=25°c 32 32 5 0.625 0.1 (MA) Max hFE @ ' ces ^C8 (V) (ma ) (V)


    OCR Scan     		PDF BCX78-10 O-92-4 BCX78-7 BCX78-8 BF421 O-92-1 BF423 BCX79-9 BF493 BCX78-9 BCX79 BCX79-10 BCX79-7 BCX79-8

    BC328

    Abstract: BC338
    Text: SEMICONDUCTOR TECHNICAL DATA BC328 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100~630 VCE=-1V, Ic=-100mA . • For Complementary with NPN type BC338.


    OCR Scan     		PDF BC328 -800mA. -100mA) BC338. BC328 BC338

    ZTX453

    Abstract: BFS98 BC338C ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
    Text: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AM PLIFIERS, DRIVERS and OUTPUT STA G ES, OSCILLATORS, AND GENERAL PURPOSE


    OCR Scan     		PDF ZTX453 ZTX452 ZTX552 MPSA06 MPSA56 BC546P BC556P ZTX451 MPSA55 ZTX750 BFS98 BC338C BC556P BFS61 MPSA56

    BC557P

    Abstract: 945 MOTHERBOARD CIRCUIT diagram BFS60 mpsa05 ZTX107 ztx304 ZTX337 ZTX338 BC546P BC556P
    Text: PNP GENERAL PURPOSE T A B LE 2 - PN P SILIC O N P LA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include:


    OCR Scan     		PDF MPSA56 MPSA06 BC556P ZTX537 BC337P BC327P ZTX338 ZTX538 BC338P BC328P BC557P 945 MOTHERBOARD CIRCUIT diagram BFS60 mpsa05 ZTX107 ztx304 ZTX337 BC546P

    100az

    Abstract: BCW65A BCW66F BCW66G BCW66H BCW68F BCW68G BCW68H FMMTA05 FMMTA06
    Text: SOT 23 TRANSISTORS NPN MEDIUM POWER RATINGS AND CHARACTERISTICS at 25°C ambient temperature. Type FM M TA06 V c es Volts VcEO Volts 80 80 lc mA 500 Ptot* mW 350 h FE VcE {sat min/max at Ic /V c e max at Ic /Ib m A/Volts Volts mA 5 0 /- 10/1 Noise Figure at


    OCR Scan     		PDF FMMTA06 FMMTA56 BCW66F BCW68F BCW66G BCW68G BCW66H BCW68H FMMTA05 FMMTA55 100az BCW65A BCW68F BCW68G BCW68H

    2N2270

    Abstract: 2N2102 2N3262 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86
    Text: NPN SWITCHING TABLE 3 NPN SILICON PLANAR M E D IU M AND HIGH SPEED SW ITCHING TRANSISTORS The devices shown in this table are characterised for general medium voltage, medium and high speed switching applications in Commercial, Industrial and Military equipments.


    OCR Scan     		PDF 2N3262 BCY79 2N929 2N930 2N2219A 2N2905A 2N2222A 2N2907A ZT181 ZT182 2N2270 2N2102 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86

    BC5471

    Abstract: BC547E BC 548 NPN relay 876 N 2C S BC5461 BC2371 BC516 548 BC550 bc4151 TLC 5491
    Text: SIEMENS/ SPCL-. SEMIC ON DS Application Type NPN = N PNP = P 2TE D • epitaxial = E planar = PL suitable complementary transistors fl23b350 O D l b m b ■ T-'^-Ol Max. ratings Vc b o VCEO VfeBO le r, Plot flth JA [l/CES] V V V mA c mW K/W BC1671>N BC1681)N


    OCR Scan     		PDF BC1671 BC1681 BC1821 BC2121 BC2371 BC2381 BC2391 BC2571 BC2581 BC2591 BC5471 BC547E BC 548 NPN relay 876 N 2C S BC5461 BC516 548 BC550 bc4151 TLC 5491

    1ff TRANSISTOR SMD MARKING CODE

    Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
    Text: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369


    OCR Scan     		PDF DDDQS11 OT-23 350mW CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 1ff TRANSISTOR SMD MARKING CODE smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p