ARCNET driver
Abstract: arcnet m4 controller opto 22 m4 controller opto 22 ethernet
Text: EXTENDED ARCNET TIMEOUTS TECHNICAL NOTE page 1/2 Form 1247-020827 Overview If you have a very expansive ARCNET network—a network longer than the two-mile ARCNET distance specification—you may need to use an extended ARCNET timeout. An extended timeout
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PCI20
800-TEK-OPTO
opto22
321-OPTO
ARCNET driver
arcnet
m4 controller opto 22
m4 controller opto 22 ethernet
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V53C181608 1M X 16 PAGE MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE V53C181608 50 60 70 Max. RAS Access Time, tRAC 50 ns 60 ns 70 ns Max. Column Address Access Time, (tCAA ) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)
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V53C181608
V53C181608
V53C181600
V53C18
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V53C8256H
Abstract: asc10
Text: MOSEL VITELIC V53C408H 1M x 4 PAGE MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE PRELIMINARY V53C408H 40 45 50 60 Max. RAS Access Time, tRAC 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 22 ns 24 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)
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V53C408H
V53C408H
V53C8256H
asc10
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txal
Abstract: B78108-S1153-K CISPR22 V23806-A84-C4
Text: s Single Mode Family Single Mode 155 MBd ATM Transceiver 2by9 Extended Temperature Range -40 to 85°C Data Sheet 09/97 s Single Mode 155 MBd ATM Transceiver 2by9 Extended Temperature Range Contents Page Siemens Fiber Optic Components 3 Features 4 Ordering Information
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B78108-S1153-K
Abstract: CISPR22 V23806-A84-C3
Text: s Single Mode Family Single Mode 155 MBd ATM Transceiver 1by9 Extended Temperature Range -40 to +85°C Data Sheet 09/97 s Single Mode 155 MBd ATM Transceiver 1by9 Extended Temperature Range Contents Page Siemens Fiber Optic Components 3 Features 4 Ordering Information
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lg tv 29" circuits diagrams
Abstract: marking code ADH OA81 GMS800 GMS800 INSTRUCTION 27c256 intel Analog devices marking 8F lg tv led driver circuit diagram marking code R66 SEMICON INC
Text: LG Semicon 8-bit Microcontrollers GMS81604/08 Revision History Rev 1.2 Dec. 1998 Redraw package dimension on page 5~6. Rev 1.1 (Nov. 1998) Operating Voltage, 2.7~5.5V is extended with 2.4~5.5V. Operating Temperature, -20~80°C is extended with -20~85°C.
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GMS81604/08
offi0000H
6000H
S81608
lg tv 29" circuits diagrams
marking code ADH
OA81
GMS800
GMS800 INSTRUCTION
27c256 intel
Analog devices marking 8F
lg tv led driver circuit diagram
marking code R66
SEMICON INC
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SERVICE MANUAL tv hyundai
Abstract: SERVICE MANUAL tv hyundai 29" 42-SDIP GMS81504 t1oi S8160 he007h
Text: HYUNDAI MicroElectronics 8-bit Microcontrollers GMS81604/08 Revision History Rev 1.2 Dec. 1998 Redraw package dimension on page 5~6. Rev 1.1 (Nov. 1998) Operating Voltage, 2.7~5.5V is extended to 2.4~5.5V. Operating Temperature, -20~80°C is extended to -20~85°C.
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GMS81604/08
6000H
S81608
SERVICE MANUAL tv hyundai
SERVICE MANUAL tv hyundai 29"
42-SDIP
GMS81504
t1oi
S8160
he007h
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GLT41016
Abstract: GLT41016-35J4 GLT41016-40J4
Text: G -LINK GLT41016 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT May 1997 Rev 1 Features : Description : The GLT41016 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41016 offers Fast Page mode with Extended Data Output, and has
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GLT41016
GLT41016
256-cycle
400mil
2701Northwestern
GLT41016-35J4
GLT41016-40J4
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Untitled
Abstract: No abstract text available
Text: AS4C128M8D3 REVISION HISTORY Revision Rev. 1.0 Rev. 2.0 Rev 3.0 Confidential Description Initial Issue Typing error – in Table 2 page 2 – incorrect temperature range amended to: - Commercial Extended (0 ~ 95°C) - Industrial (-40 ~ 95°C) Updated Table 12. Recommended DC Operating Conditions – page
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AS4C128M8D3
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AS4C64M16D3
Abstract: No abstract text available
Text: AS4C64M16D3 REVISION HISTORY Revision Rev. 1.0 Rev. 2.0 Rev 3.0 Details Date Initial Issue Typing error – in Table 2 page 2 – incorrect temperature range amended to: - Commercial Extended (0 ~ 95°C) - Industrial (-40 ~ 95°C) Updated Table 11. Recommended DC Operating Conditions – page 21
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AS4C64M16D3
AS4C64M16D3
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FEV111
Abstract: Q67103-H6594 mtsxl
Text: ICs for Communications Memory Time Switch Extended Large MTSXL PEB 2447 Version 1.2 Data Sheet 03.97 T2447-XV12-D2-7600 PEB 2447 Revision History: Current Version: 03.97 Editorial Update Previous Version: 01.95 Page Page (in previous (in current Version)
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T2447-XV12-D2-7600
GPR05365
P-MQFP-100-2
FEV111
Q67103-H6594
mtsxl
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HSCX-TE
Abstract: Siemens temperature controller
Text: ICs for Communications High-Level Serial Communication Controller Extended HSCX-TE PSF 21525 Version 2.1 Delta Sheet 05.97 T2152-5V21-L1-7600 PSF 21525 Revision History: Current Version: 05.97 Previous Version: None Page Page in previous (in new Version
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T2152-5V21-L1-7600
HSCX-TE
Siemens temperature controller
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siemens Package Outlines P-LCC
Abstract: PLCC 44 intel package dimensions GPM05247 HSCX-TE P-TQFP-64
Text: ICs for Communications High-Level Serial Communications Controller Extended HSCX-TE PSB 21525 Version 2.1 Delta Sheet 02.96 T2152-5V21-D1-7600 PSB 21525 Revision History: Current Version: 02.96 Previous Version: none Page Page in previous (in new Version
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T2152-5V21-D1-7600
GPM05247
P-TQFP-64-1
siemens Package Outlines P-LCC
PLCC 44 intel package dimensions
GPM05247
HSCX-TE
P-TQFP-64
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FW912
Abstract: No abstract text available
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture
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MT28F642D18
MT28F642D20
FW912
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Untitled
Abstract: No abstract text available
Text: IS41C4400X IS41LV4400X SERIES ISSI 4M x 4 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE PRELIMINARY INFORMATION FEBRUARY 2000 FEATURES DESCRIPTION • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval:
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IS41C4400X
IS41LV4400X
16-MBIT)
cycles/32
cycles/64
300-mil
IS41LV44002-50JI
IS41LV44002-50TI
IS41LV44002-60JI
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K4E151612D
Abstract: K4E151612D-J K4E171611D K4E171611D-J K4E171612D K4E171612D-J K4E151611D K4E151611D-J
Text: K4E171611D, K4E151611D K4E171612D, K4E151612D CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K
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K4E171611D,
K4E151611D
K4E171612D,
K4E151612D
16Bit
1Mx16
400mil
K4E151612D
K4E151612D-J
K4E171611D
K4E171611D-J
K4E171612D
K4E171612D-J
K4E151611D
K4E151611D-J
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V53C181608-1024
Abstract: No abstract text available
Text: MOSEL VITELIC V53C181608 1M X 16 PAGE MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tRAc 50 ns 60 ns 70 ns Max. Column Address Access Time, (Iqaa) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)
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V53C181608
16-bit
V53C181608-1024
cycles/16
42-pin
V53C181608
104-VITELIC
b3533Tl
0003b44
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DQ12E
Abstract: No abstract text available
Text: Target CMOS DRAM KM432V504, KM432V524 512Kx32Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x32 bit Extended Data Out CMOS DRAMs. Extended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Refresh cycle
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KM432V504,
KM432V524
512Kx32Bit
512Kx32
DD2D35S
DQ12E
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Untitled
Abstract: No abstract text available
Text: M O S E L V iT E U C V53C181608 1M X 16 PAGE MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE 50 60 70 50 ns 60 ns 70 ns Max. Column Address Access Time, tCAA 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 20 ns 25 ns
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V53C181608
16-bit
cycles/16
42-pin
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Untitled
Abstract: No abstract text available
Text: Target CMOS DRAM KM432V504, KM432V524 512K x32B it CM O S Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x32 bit Extended Data Out CMOS DRAMs. Extended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Refresh cycle
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KM432V504,
KM432V524
512Kx32
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V53C16258H
Abstract: 3bld
Text: MOSEL VITELIC V53C16258H 256KX 16 PAGE MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE PRELIMINARY 40 45 50 60 Max. R A S Access Time, tf^c 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 22 ns 24 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)
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V53C16258H
256KX
16-bit
40-pin
0003L24
V53C16258H
3bld
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V53C16258H 256KX 16 PAGE MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE PRELIMINARY 40 45 50 60 Max. R A S Access Time, tf^c 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 22 ns 24 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)
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V53C16258H
256KX
110ns
V53C16258H
0003L24
40-Pin
DD03bPS
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Untitled
Abstract: No abstract text available
Text: HY51V S 64403HG(HGL) 16Mx4, 3.3V, BKRef, EDO DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read opera
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HY51V
64403HG
16Mx4,
64Mbit
100us.
400mil
32pin
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V53C8256H
Abstract: Wx25
Text: M O SEL V IT E L IC V53C408H 1M x 4 PAGE MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE PRELIMINARY 40 45 50 60 Max. RAS Access Tim e, tpiAC 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Tim e, (îc a a ) 20 ns 22 ns 24 ns 30 ns Min. Extended Data O ut Page Mode Cycle Tim e, (tPC)
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V53C408H
110ns
cycles/16
26/20-pin
V53C40r
V53C8256H
Wx25
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