M112
Abstract: SD1541-01 SD1541-1 A 1458
Text: SD1541-01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS • 400 W min. DME 1025 - 1150 MHz • 6.5 dB min. GAIN • REFRACTORY GOLD METALLIZATION • EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND
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SD1541-01
SD1541-1
SD1541-01
M112
SD1541-1
A 1458
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epsilam 10
Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial
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LLE18150X
epsilam 10
BY239
BDT91
LLE18150X
SC15
erie 1250-003
diode BY239
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SD1899
Abstract: No abstract text available
Text: SD1899 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION EFFICIENCY - 50% TYPICAL POUT = 30 W MIN. WITH 9.3 dB GAIN .250 x .320 2LFL M170 epoxy sealed ORDER CODE SD1899 BRANDING SD1899 PIN CONNECTION DESCRIPTION
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SD1899
SD1899
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Epsilam-10
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF898/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF898 Designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of
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MRF898/D
MRF898
MRF898
MRF898/D
Epsilam-10
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5308-2CC
Abstract: 6 pin cdi epsilam 10 epsilam InMarSat power M151 SD1893-03 cdi ic
Text: SD1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY GOLD METALLIZATION HIGH RELIABILITY AND RUGGEDNESS P OUT = 10 W MIN. WITH 11.0 dB GAIN COMMON BASE .230 2LFL M151 hermetically sealed ORDER CODE
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SD1893-03
SD1893-03
5308-2CC
6 pin cdi
epsilam 10
epsilam
InMarSat power
M151
cdi ic
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HUGHES mcw 550
Abstract: discharge capacitor welding hughes welder welder hughes mcw 550 hughes capacitor discharge welder mcw-550 VTA90 welding "application note" MAXY90
Text: Beam Lead Device Bonding to Soft Substrates Application Note 993 Introduction The hard gold surface on standard PC boards combined with soft substrate materials makes it almost impossible to successfully bond beam lead devices onto the boards with normally recommended
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VTA90
MAXY90
MCW552
MA09-11
MA-02-25
WE-2231
HUGHES mcw 550
discharge capacitor welding
hughes welder
welder hughes mcw 550
hughes capacitor discharge welder
mcw-550
VTA90
welding "application note"
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Untitled
Abstract: No abstract text available
Text: SD1899 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION EFFICIENCY - 50% TYPICAL POUT = 30 W MIN. WITH 9.3 dB GAIN .250 x .320 2L FL M170 epoxy sealed O RDER CODE SD1899 BRANDING SD1899 PIN CONNECTION DESCRIPTION
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SD1899
SD1899
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MRB11040W
Abstract: QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity
Text: 33'/3 Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor P H IL IP S MRB11040W 7110fi2Li 004b32M 0M2 M P H I N SbE D INTERNATIONAL FEATURES DESCRIPTION APPLICATIONS • Input prematching cell allows an
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FO-67
MRB11040W
0G4b32M
T-33-13
711002b
0D4b32fl
MRB11040W
QQHb32b
International Power Sources
NPN Silicon Epitaxial Planar Transistor
copper permittivity
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MX0912B250Y
Abstract: 33-AS IEC134 015 capacitor philips
Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high
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33-AS"
MX0912B250Y
G04b34b
T-33-Ã
711Dfl2b
004b352
0QMb43?
MX0912B250Y
33-AS
IEC134
015 capacitor philips
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RX1214B150W
Abstract: No abstract text available
Text: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C
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bb53131
RX1214B150W
RX1214B150W
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Untitled
Abstract: No abstract text available
Text: • N AMER PHILIPS/DISCRETE □bE D ■ bbS3T31 D01S1S3 1 ■ PZB16035U _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A r-3 3 -u % MICROWAVE POWER TRANSISTORS N-P-N transistor fo r use in common-base, class-B, am plifier under c.w. conditions in m ilita ry and professional applications up to 1,6 GHz.
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bbS3T31
D01S1S3
PZB16035U
bb53T31
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Untitled
Abstract: No abstract text available
Text: N AUER PHI L I P S / D I S CR E T E □ bE D bb53T31 DD1SE17 1 RZ1214B65Y T - 3 3 - 5 ~ PULSED M IC R O W A VE POWER TRANSISTOR N:P-N silicon microwave power transistor for use in a common-base, class-B wideband amplifier and operating under pulsed conditions in L-band radar applications.
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bb53T31
DD1SE17
RZ1214B65Y
T-33-IS
7Z94222
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Untitled
Abstract: No abstract text available
Text: Philips Components MZ0912B100Y D ISC R ETE SEM ICO N D U CTO R S D a ta s h a e t • t a lu s P re fim in a iy s p e c ific a tio n d a le o f le s u e J u ly 1 9 9 0 NPN silicon planar epitaxial microwave power transistor FEATU RES APPLICATIO N D ESCRIPTIO N
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MZ0912B100Y
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Untitled
Abstract: No abstract text available
Text: 11_ N AMER PHILIPS/DISCRETE LbSBTBl 0015133 OLE D RX1214B150W r J - 3 2 ^ I 'o ' M IC R O W A V E POW ER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 1.2 to 1.4 GHz frequency range.
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RX1214B150W
bb53T31
T-33-15
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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MF1011B900Y
Abstract: SC15
Text: Philips Semiconductors Product specification Microwave power transistor MF1011B900Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 100 |as pulse width, duty factor 10% Microwave performance up to T mb = 25 °C in a common-base class C
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MF1011B900Y
MLC725
OT448A.
MF1011B900Y
SC15
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Philips CD 303
Abstract: PZB16040U
Text: « N AUER P H IL IP S / D IS C R E T E U t V h L U P M t N I OLE ]> • U À IA bbSBTBl O D IS IS T 2 ■ " ■ PZB16040U This data sheet contains advance information and specifications are subject to change w ithout notice. J V r-s 3 ~ n M IC R O W A V E PO W ER TRA N SISTO R
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PZB16040U
r-33-u
G151b3
T-33-11
7Z942B7
Philips CD 303
PZB16040U
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RZB12050Y
Abstract: ATC capacitor transistor 421
Text: N AMER PHILIPS/DISCRETE ObE D • b b 5 3 T 31 □ □ 15 2 7 =5 1 ■ RZB12050Y V 'r-? 3 - 3 PULSED MICROW AVE POW ER TRA N SISTO R NPN silicon microwave power transistor intended for use in a common-base, class-C narrowband amplifier operating under pulsed conditions.
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bS3T31
FO-57C)
100/is;
RZB12050Y
ATC capacitor
transistor 421
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NPN Silicon Epitaxial Planar Transistor
Abstract: MZ0912B50Y TACAN
Text: Data sheet statut Preliminary apedfrcatfon date ol Issue July 1990 MZ0912B50Y NPN silicon planar epitaxial microwave power transistor F EATU RES APPLICATION d e s c r ip t io n • Interdigitated structure; high emitter efficiency. • O iffused emitter ballasting
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MZ0912B50Y
NPN Silicon Epitaxial Planar Transistor
MZ0912B50Y
TACAN
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PZB16035U
Abstract: discrete transistor amplifier 2.5 ghz
Text: N AMER PHILIPS/DISCRETE □ bE D • bb53*i31 Q01S1S3 1 ■ L PZB16Ô35U r-33-it MICROWAVE POWER TRANSISTORS N-P-N transistor for use in common-base, class-B, amplifier under c.w. conditions in military and professional applications up to 1,6 GHz. Features
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bb53131
Q01S1S3
PZB16Ã
r-33-it
7Z93032
S3T31
00151S7
PZB16035U
PZB16035U
discrete transistor amplifier 2.5 ghz
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RX1011B350Y
Abstract: broad-band Microwave Class-C Transistor Amplifiers
Text: N AMER P H I L I P S / D I S C R E T E bbSB^l ObE D 0 0 1 5 1 7 ^ fi D EVELOPM EN T DATA RX1011B350Y T h is data sheet contains advance inform ation and specifications are subject to change w ith out notice. r-f 33-/S" PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C
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RX1011B350Y
T-33-
7Z23071
RX1011B350Y
broad-band Microwave Class-C Transistor Amplifiers
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PZ1418B30U
Abstract: PZ1721B25U PZ2024B20U
Text: N AMER PHILIPS/DISCRETE DbE D • LbSBTBl DD1S137 3 ■ " PZ1418B30U PZ1721B25U PZ2024B20U J T - 3 3 - U MICROWAVE POWER TRANSISTORS FOR WIDEBAND AMPLIFIERS N-P-N transistors for use in common-base, class-B, broadband amplifiers under c.w. conditions in m ilitary and professional applications.
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DD1S137
PZ1418B30U
PZ1721B25U
PZ2024B20U
T-33-U
PZ2024B20U
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m147 transistor
Abstract: 1029F M147 ci m147 SD1868
Text: Hi f I r l / C lU O J v f I If P ro g re s s P o w ered b y T ec h no log y 140 Com m erce Drive M ontgom eryville, PA 18936-1013 Tel: 215 631-9840 SD1868 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 1.6-1.65GHz POWER OUT
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SD1868
65GHz
SD1868
S88SDI868-34
m147 transistor
1029F
M147
ci m147
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epsilam
Abstract: SD1886 25CC M155 TCC2023-6 chip die npn transistor NPN microwave power transistor 865
Text: H * : If/lvf T»j-m ! fII P ro g re s s P o w e re d b y T ec h no log y "*4 Commerce Drive Montgom ery ville, PA 18936-1013 Tel: 215 631-9840 T C L 2 0 ^ O - D RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS • ■ ■ ■ ■ ■
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TCC20
SD1886
TCC2023-6
withC2023-6
4-25pF
000pF
TCC2023-6
epsilam
25CC
M155
chip die npn transistor
NPN microwave power transistor 865
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