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    EPA480B Search Results

    EPA480B Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    EPA480B Excelics Semiconductor 8-12V high efficiency heterojunction power FET Original PDF
    EPA480BV Excelics Semiconductor 8-12V high efficiency heterojunction power FET Original PDF

    EPA480B Datasheets Context Search

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    EPA480BV

    Abstract: IGD 75a 12v EPA480B
    Text: Excelics EPA480B/EPA480BV PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET 960 • • • • • • • +35.5dBm TYPICAL OUTPUT POWER 7.5dB TYPICAL POWER GAIN FOR EPA480B AND 12.0dB FOR EPA480BV AT 12GHz 0.4X 4800 MICRON RECESSED “MUSHROOM” GATE


    Original     		PDF EPA480B/EPA480BV EPA480B EPA480BV 12GHz 120mA 20micons EPA480B EPA480BV IGD 75a 12v

    IGD 75a 12v

    Abstract: EPA480B EPA480BV
    Text: EPA480B/EPA480BV High Efficiency Heterojunction Power FET UPDATED: 09/27/2007 • • • • • • • +35.5dBm TYPICAL OUTPUT POWER 7.5dB TYPICAL POWER GAIN FOR EPA480B AND 9.0dB FOR EPA480BV AT 12GHz 0.3X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EPA480B/EPA480BV EPA480B EPA480BV 12GHz 120mA EPA480B EPA480BV EPA480BV. IGD 75a 12v

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF

    EFA480B

    Abstract: EFA480BV EPA480BV
    Text: EFA480B/EFA480BV Low Distortion GaAs Power FET FEATURES • • • • • • • 960 156 50 +34.0dBm TYPICAL OUTPUT POWER 6.0dB TYPICAL POWER GAIN FOR EFA480B AND 7.5dB FOR EFA480BV AT 12GHz 0.5X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EFA480B/EFA480BV EFA480B EFA480BV 12GHz EPA480BV EFA480BV) EFA480B

    Curtice

    Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
    Text: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE


    Original     		PDF EFA018A 00E-12 40E-14 00E-08 63E-13 80E-14 00E-14 EFA025A Curtice EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A

    EPA018A

    Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
    Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the


    Original     		PDF EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C

    EFA480B

    Abstract: EFA480BV EPA480BV gm 90 156 369
    Text: Excelics EFA480B/EFA480BV PRELIMINARY DATA SHEET Low Distortion GaAs Power FET 960 • • • • • • • +34.0dBm TYPICAL OUTPUT POWER 6.0dB TYPICAL POWER GAIN FOR EFA480B AND 7.5dB FOR EFA480BV AT 12GHz 0.5X 4800 MICRON RECESSED “MUSHROOM” GATE


    Original     		PDF EFA480B/EFA480BV EFA480B EFA480BV 12GHz EPA480BV EFA480B EFA480BV. gm 90 156 369