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    EPA480BV Search Results

    EPA480BV Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EPA480BV Excelics Semiconductor 8-12V high efficiency heterojunction power FET Original PDF

    EPA480BV Datasheets Context Search

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    EPA480BV

    Abstract: IGD 75a 12v EPA480B
    Text: Excelics EPA480B/EPA480BV PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET 960 • • • • • • • +35.5dBm TYPICAL OUTPUT POWER 7.5dB TYPICAL POWER GAIN FOR EPA480B AND 12.0dB FOR EPA480BV AT 12GHz 0.4X 4800 MICRON RECESSED “MUSHROOM” GATE


    Original     		PDF EPA480B/EPA480BV EPA480B EPA480BV 12GHz 120mA 20micons EPA480B EPA480BV IGD 75a 12v

    IGD 75a 12v

    Abstract: EPA480B EPA480BV
    Text: EPA480B/EPA480BV High Efficiency Heterojunction Power FET UPDATED: 09/27/2007 • • • • • • • +35.5dBm TYPICAL OUTPUT POWER 7.5dB TYPICAL POWER GAIN FOR EPA480B AND 9.0dB FOR EPA480BV AT 12GHz 0.3X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EPA480B/EPA480BV EPA480B EPA480BV 12GHz 120mA EPA480B EPA480BV EPA480BV. IGD 75a 12v

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF

    EFA480B

    Abstract: EFA480BV EPA480BV
    Text: EFA480B/EFA480BV Low Distortion GaAs Power FET FEATURES • • • • • • • 960 156 50 +34.0dBm TYPICAL OUTPUT POWER 6.0dB TYPICAL POWER GAIN FOR EFA480B AND 7.5dB FOR EFA480BV AT 12GHz 0.5X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EFA480B/EFA480BV EFA480B EFA480BV 12GHz EPA480BV EFA480BV) EFA480B

    EFA480B

    Abstract: EFA480BV EPA480BV gm 90 156 369
    Text: Excelics EFA480B/EFA480BV PRELIMINARY DATA SHEET Low Distortion GaAs Power FET 960 • • • • • • • +34.0dBm TYPICAL OUTPUT POWER 6.0dB TYPICAL POWER GAIN FOR EFA480B AND 7.5dB FOR EFA480BV AT 12GHz 0.5X 4800 MICRON RECESSED “MUSHROOM” GATE


    Original     		PDF EFA480B/EFA480BV EFA480B EFA480BV 12GHz EPA480BV EFA480B EFA480BV. gm 90 156 369