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    EMVY630 Price and Stock

    United Chemi-Con Inc EMVY630ARA680MKE0S

    CAP ALUM 68UF 20% 63V SMD
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    DigiKey EMVY630ARA680MKE0S Reel 6,000 250
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    EMVY630ARA680MKE0S Cut Tape 338 1
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    Mouser Electronics EMVY630ARA680MKE0S 340
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    Verical EMVY630ARA680MKE0S 1,500 250
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    Onlinecomponents.com EMVY630ARA680MKE0S 1,500
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    United Chemi-Con Inc EMVY630ARA101MKE0S

    CAP ALUM 100UF 20% 63V SMD
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    DigiKey EMVY630ARA101MKE0S Reel 5,500 250
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    EMVY630ARA101MKE0S Cut Tape 45 1
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    Mouser Electronics EMVY630ARA101MKE0S 1,959
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    New Advantage Corporation EMVY630ARA101MKE0S 3,000 1
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    United Chemi-Con Inc EMVY630ARA221MKE0S

    CAP ALUM 220UF 20% 63V SMD
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    DigiKey EMVY630ARA221MKE0S Reel 2,000 250
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    EMVY630ARA221MKE0S Cut Tape 425 1
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    Mouser Electronics EMVY630ARA221MKE0S 6,873
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    Verical EMVY630ARA221MKE0S 2,750 250
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    Newark EMVY630ARA221MKE0S Reel 200
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    Onlinecomponents.com EMVY630ARA221MKE0S 2,750
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    Bristol Electronics EMVY630ARA221MKE0S 165 3
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    Quest Components EMVY630ARA221MKE0S 132
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    Master Electronics EMVY630ARA221MKE0S 2,750
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    New Advantage Corporation EMVY630ARA221MKE0S 109 1
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    United Chemi-Con Inc EMVY630GRA471MLN0S

    CAP ALUM 470UF 20% 63V SMD
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    DigiKey EMVY630GRA471MLN0S Reel 373 125
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    EMVY630GRA471MLN0S Cut Tape 19 1
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    Verical EMVY630GRA471MLN0S 750 125
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    United Chemi-Con Inc EMVY630ARA221MLH0S

    CAP ALUM 63V POLAR
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    DigiKey EMVY630ARA221MLH0S Reel 350 175
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    Mouser Electronics EMVY630ARA221MLH0S
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    Find more EMVY630 price and stock on Findchips.com

    EMVY630 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    EMVY630ADA331MLH0S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 330UF 63V 20% SMD Original PDF
    EMVY630ARA101MKE0S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 100UF 63V 20% SMD Original PDF
    EMVY630ARA221MKE0S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 220UF 63V 20% SMD Original PDF
    EMVY630ARA680MKE0S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 68UF 63V 20% SMD Original PDF
    EMVY630GDA221MLH0S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 220UF 63V 20% SMD Original PDF
    EMVY630GDA331MLH0S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 330UF 63V 20% SMD Original PDF
    EMVY630GDA471MLN0S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 470UF 63V 20% SMD Original PDF
    EMVY630GDA471MMH0S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 470UF 63V 20% SMD Original PDF
    EMVY630GTR221MLH0S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 220UF 63V 20% SMD Original PDF

    EMVY630 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF6S21140HR3

    Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA Lower Z @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		PDF 100Vdc 63Vdc) 100Vdc) 120Hz) 822MMN0S EMVY500ADA1R0MD55G EMVY500ADA2R2MD55G EMVY500ADA3R3MD55G EMVY500ADA4R7ME55G

    EMVY101ARA101MKE0S

    Abstract: EMVY160ARA102MKE0S EMVY350ADA470MF55G EMVY350ADA470 emvy500 EMVY101ARA680MKE EMVY350ARA471MKE0S EMVY500ADA221MJA0G 10MF EMVY6R3ADA220MD55G
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		PDF 100Vdc 63Vdc) 100Vdc) 120Hz) EMVY500ADA1R0MD55G EMVY500ADA2R2MD55G EMVY500ADA3R3MD55G EMVY500ADA4R7ME55G EMVY500ADA100MF55G EMVY101ARA101MKE0S EMVY160ARA102MKE0S EMVY350ADA470MF55G EMVY350ADA470 emvy500 EMVY101ARA680MKE EMVY350ARA471MKE0S EMVY500ADA221MJA0G 10MF EMVY6R3ADA220MD55G

    JA02

    Abstract: EMVY101ARA680MKE EMVY350ADA100ME55G EMVY630ara221 JA-02 e55 f55 f61
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105℃ MZA ●Endurance : 1,000 to 5,000 hours at 105℃ ●Low impedance ●For digital equipment, especially DC-DC converters ●Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		PDF 100Vdc 63Vdc) 100Vdc) 120Hz) EMVY630ARA680MKE0S EMVY630ARA101MKE0S EMVY630ARA221MKE0S EMVY630DA221MLH0S EMVY630DA331MLH0S JA02 EMVY101ARA680MKE EMVY350ADA100ME55G EMVY630ara221 JA-02 e55 f55 f61

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to


    Original     		PDF MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S23140HR3 MRF6S23140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to


    Original     		PDF MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140HR3

    NICHICON lot month

    Abstract: No abstract text available
    Text: SPI-8010A Application Note Surface Molding Chopper type Switching Regulator IC SPI-8010A 5th Edition December 2005 SANKEN ELECTRIC CO., LTD SPI-8010A －－－ Contents －－－ 1. General Description 1-1 Features －－－－－－－－－－ 3 1-2 Applications


    Original     		PDF SPI-8010A NICHICON lot month

    81c1000

    Abstract: ATC100B241JT200XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 3, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,


    Original     		PDF MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 81c1000 ATC100B241JT200XT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1.1, 12/2009 RF Power Field Effect Transistors MRF6S18140HR3 MRF6S18140HSR3 Designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-


    Original     		PDF MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 IS-95 MRF6S18140HR3

    BLF578

    Abstract: AN10858 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X ATC800B471JT200X DVB-T transistor amplifier
    Text: AN10858 174 MHz to 230 MHz DVB-T power amplifier with the BLF578 Rev. 02 — 26 March 2010 Application note Document information Info Content Keywords BLF578, LDMOS, DVB, planar balun Abstract This application note describes the design and performance of a 200 W


    Original     		PDF AN10858 BLF578 BLF578, AN10858 BLF578 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X ATC800B471JT200X DVB-T transistor amplifier

    J266

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 1, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V14300HR3 MRF6V14300HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V14300H MRF6V14300HR3 MRF6V14300HSR3 MRF6V14300H J266

    250GX-0300-55-22

    Abstract: AN1955 JESD22-A114 MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 j686 CRC120610R0FKEA Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for CDMA base station applications with frequencies from 2300 to


    Original     		PDF MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 MRF6S23100HR3 250GX-0300-55-22 AN1955 JESD22-A114 MRF6S23100H MRF6S23100HSR3 j686 CRC120610R0FKEA Nippon capacitors

    Nippon capacitors

    Abstract: MRF6S19120H
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S19120HR3 MRF6S19120HSR3 Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S19120H IS--95 MRF6S19120HR3 MRF6S19120HSR3 Nippon capacitors

    465B

    Abstract: A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 Nippon capacitors Nippon chemi

    2225x7r225kt3ab

    Abstract: MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHR6 MRF6VP41KHSR6 ATC100B9R1CT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP41KH Rev. 0, 1/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,


    Original     		PDF MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 2225x7r225kt3ab MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHSR6 ATC100B9R1CT500XT

    k 2645 MOSFET

    Abstract: K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1006H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1006HR5 MMRF1006HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to


    Original     		PDF MMRF1006H MMRF1006HR5 MMRF1006HSR5 MMRF1006HR5

    T491D106K010AT

    Abstract: MRF377H PCN13170 nippon capacitors dvbt dvbt transmitter MRF377 T491D106K050at 3A412 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 2, 3/2009 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377HR3 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3 T491D106K010AT MRF377H PCN13170 nippon capacitors dvbt dvbt transmitter MRF377 T491D106K050at 3A412 Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with fre-


    Original     		PDF MRF6P3300H MRF6P3300HR3/HR5 MRFE6P3300HR3/HR5. PCN12895 MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6P9220H MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V14300HR3 MRF6V14300HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V14300H MRF6V14300HR3 MRF6V14300HSR3 MRF6V14300HR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF377H Rev. 2, 3/2009 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3