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    250GX-0300-55-22

    Abstract: AN1955 JESD22-A114 MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 j686 CRC120610R0FKEA Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for CDMA base station applications with frequencies from 2300 to


    Original     		PDF MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 MRF6S23100HR3 250GX-0300-55-22 AN1955 JESD22-A114 MRF6S23100H MRF6S23100HSR3 j686 CRC120610R0FKEA Nippon capacitors

    CRC120610R0FKEA

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for CDMA base station applications with frequencies from 2300 to


    Original     		PDF MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 -40subsidiaries, MRF6S23100HR3 CRC120610R0FKEA