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    EGN21 Search Results

    EGN21 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EGN-2-10 Vishay Wirewound Resistors Military/Established Reliability Original PDF
    EGN21A045IV Eudyna Devices High Voltage - High Power GaN-HEMT Original PDF
    EGN21A090IV Unknown High Voltage - High Power GaN-HEMT Original PDF
    EGN21A180IV Eudyna Devices High Voltage - High Power GaN-HEMT Original PDF

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    hpa L-band

    Abstract: EGN21A180IV
    Text: Eudyna GaN-HEMT 180W Preliminary EGN21A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=45dBm(Avg.) ・High Efficiency: 32%(typ.) at Pout=45dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz


    Original     		PDF EGN21A180IV 45dBm 2200MHz EGN21A180IV Symb004 hpa L-band

    Untitled

    Abstract: No abstract text available
    Text: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency


    Original     		PDF EGN21C105I2D 14GHz 14GHz 25deg /-10MHz 45dBm

    Untitled

    Abstract: No abstract text available
    Text: EGN21C320IV High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 55.0dBm typ. @ Psat -High Efficiency: 65%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency


    Original     		PDF EGN21C320IV 14GHz 14GHz 25deg

    2.2GHz

    Abstract: EGN21C160I2D GaN amplifier
    Text: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 52.5dBm typ. @ Psat ・High Efficiency: 68%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C160I2D 14GHz 600mA 135GHz, 145GHz, 2.2GHz EGN21C160I2D GaN amplifier

    egn21c020mk

    Abstract: MTTF JESD22-A114 EGN21
    Text: EGN21C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 19dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C020MK 14GHz egn21c020mk MTTF JESD22-A114 EGN21

    EGN21C070MK

    Abstract: JESD22-A114
    Text: EGN21C070MK GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 49.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 17.0dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C070MK 14GHz JESD22-A114) JEIA/ESD22-A115) EGN21C070MK JESD22-A114

    B4846

    Abstract: S21 Package GRM188B11H102KA01D CS3376C
    Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF 14GHz EGN21C105I2D /-10MHz 45dBm /-10MHz B4846 S21 Package GRM188B11H102KA01D CS3376C

    Untitled

    Abstract: No abstract text available
    Text: EGN21C070MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 49.5dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 17.0dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C070MK 14GHz 25deg JESD22-A114) JEIA/ESD22-A115)

    Untitled

    Abstract: No abstract text available
    Text: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C160I2D 14GHz 25deg /-10MHz

    Untitled

    Abstract: No abstract text available
    Text: EGN21C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 45.0dBm typ. @ Psat Power Gain : 19dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C030MK 14GHz

    EGN21B090IV

    Abstract: 911-160 EGN21B
    Text: EGN21B090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 16dB typ. at Pout=42dBm(Avg.) ・High Efficiency: 33%(typ.) at Pout=42dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION


    Original     		PDF EGN21B090IV 42dBm 2200MHz EGN21B090IV 911-160 EGN21B

    Untitled

    Abstract: No abstract text available
    Text: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 52.5dBm typ. @ Psat ・High Efficiency: 68%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C160I2D 14GHz 600mA 135GHz, 145GHz,

    EGN21A045IV

    Abstract: hpa L-band 27 31 GHz HPA GaN amplifier
    Text: Eudyna GaN-HEMT 45W Preliminary EGN21A045IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 16dB typ. at Pout=39dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=39dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz


    Original     		PDF EGN21A045IV 39dBm 2200MHz EGN21A045IV hpa L-band 27 31 GHz HPA GaN amplifier

    Untitled

    Abstract: No abstract text available
    Text: EGN21C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 19dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF 14GHz EGN21C020MK -j100

    EKZE101

    Abstract: No abstract text available
    Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF 14GHz EGN21C210I2D /-10MHz 48dBm /-10MHz EKZE101

    Untitled

    Abstract: No abstract text available
    Text: EGN21C320I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 55.0dBm typ. @ Psat -High Efficiency: 65%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C320I2D 14GHz

    vp 3082

    Abstract: 17806
    Text: EGN21C320IV High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 55.0dBm typ. @ Psat -High Efficiency: 65%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C320IV 14GHz 14GHz -j100 vp 3082 17806

    EKZE101

    Abstract: GaN amplifier 100W GRM55ER72A475K grm188b11h102ka01d 105w ATC100B Soshin JESD22-A114 MCR18 TZY2Z010A001
    Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C105I2D 14GHz 14GHz /-10MHz 45dBm EKZE101 GaN amplifier 100W GRM55ER72A475K grm188b11h102ka01d 105w ATC100B Soshin JESD22-A114 MCR18 TZY2Z010A001

    27 31 GHz HPA

    Abstract: EGN21A090IV hpa L-band Paladin-15 digital predistortion dpd 2carrier WCDMA egn21a090
    Text: Eudyna GaN-HEMT 90W Preliminary EGN21A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=42dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=42dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz


    Original     		PDF EGN21A090IV 42dBm 2200MHz EGN21A090IV 27 31 GHz HPA hpa L-band Paladin-15 digital predistortion dpd 2carrier WCDMA egn21a090

    EGN21b180

    Abstract: EGN21B EGN21B180IV
    Text: EGN21B180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 16dB typ. at Pout=45dBm(Avg.) ・High Efficiency: 32%(typ.) at Pout=45dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION


    Original     		PDF EGN21B180IV 45dBm 2200MHz EGN21B180IV EGN21b180 EGN21B

    Untitled

    Abstract: No abstract text available
    Text: EGN21C210I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C210I2D 14GHz 14GHz 25deg /-10MHz

    Untitled

    Abstract: No abstract text available
    Text: EGN21C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 43.5dBm typ. @ Psat Power Gain : 19dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C020MK 14GHz

    mar 827

    Abstract: 210w AF Power Amplifier CS3376C ATC100B JESD22-A114 TZY2Z010A001 MURATA GRM55ER72A475K
    Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C210I2D 14GHz 14GHz /-10MHz mar 827 210w AF Power Amplifier CS3376C ATC100B JESD22-A114 TZY2Z010A001 MURATA GRM55ER72A475K

    Untitled

    Abstract: No abstract text available
    Text: EGN21C070MK GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 49.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 17.0dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C070MK 14GHz JESD22-A114) JEIA/ESD22-A115)