FP11G
Abstract: FP1189-G
Text: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET
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FP1189
OT-89
FP1189
FP11G
FP1189-G
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Untitled
Abstract: No abstract text available
Text: FH1 High Dynamic Range FET Product Features • • • • • • • 50 – 4000 MHz Low Noise Figure 18 dB Gain +42 dBm OIP3 +21 dBm P1dB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF > 100 years Applications •
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OT-89
1-800-WJ1-4401
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NME2405SC
Abstract: NME2412SC NME4815SC nme2415d nme2415dc nme2405dc NME4805SC mer1s NME2412DC
Text: NME 24V & 48V Series www.murata-ps.com Isolated 1W Single Output DC/DC Converters Isolation Capacitance MTTF1 Single Isolated Output Efficiency RoHS Compliant Output Voltage FEATURES NME2405DC NME2409DC NME2412DC NME2415DC NME2405SC NME2409SC NME2412SC
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NME2405DC
NME2409DC
NME2412DC
NME2415DC
NME2405SC
NME2409SC
NME2412SC
NME2415SC
69cm2
Heatsin48-1151
NME4815SC
nme2415d
NME4805SC
mer1s
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rt6010
Abstract: 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B MDS140L 25-mils J345 1030 PULSED 32uS MODE-S
Text: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The
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MDS140L
MDS140L
rt6010
2200uf, 63v electrolytic capacitor
j453
transistor x 313
63v 2200uF
200B
25-mils
J345
1030 PULSED 32uS MODE-S
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88-108 mhz w power
Abstract: 88-108 an power 88-108 mhz 55ht fm emitter 88-108 mhz Power w 88-108mhz fm transistor
Text: FM 150 150 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION The FM 150 is a high power COMMON EMITTER bipolar transistor. It is designed for FM systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.
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100Ma
88-108 mhz w power
88-108
an power 88-108 mhz
55ht
fm emitter
88-108 mhz Power w
88-108mhz
fm transistor
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TAN15
Abstract: No abstract text available
Text: TAN15 15 Watts, 40 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN15 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor
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TAN15
TAN15
25oC2
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1035 transistor
Abstract: M.P transistor
Text: 1035 MP 35 Watt, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes
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25oC2
1035 transistor
M.P transistor
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Untitled
Abstract: No abstract text available
Text: Toshiba Matsushita Display Technology Co., Ltd 10.4TYPE COLOR TFT-LCD MODULE LTA104D182F p-Si TFT All information is subject to change without notice. Please read bottom notes. RoHS compatible FEATURES : (1) 10.4 SVGA color display with High Luminance (2) Built in Long Life Lamps(MTTF:50,000 h)
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LTA104D182F
40kHz
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700 v power transistor
Abstract: No abstract text available
Text: TPR 700 700 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The
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25oC2
700 v power transistor
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AH2G
Abstract: marking code AH2G AH2-G TriQuint SOT-89 TAPE AND REEL
Text: AH2 High Dynamic Range Amplifier Product Features 50 – 1000 MHz +40 dBm OIP3 -71dBc CTB -48dBc CSO 3.5 dB Noise Figure 14.5 dB Gain +20 dBm P1dB Lead-free/Green/RoHS-compliant SOT-89 Package • Single +5 V Supply • MTTF > 100 years • • • • •
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-71dBc
-48dBc
OT-89
AH2G
marking code AH2G
AH2-G
TriQuint SOT-89 TAPE AND REEL
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M112
Abstract: MS2473
Text: MS2473 600 Watts, 50 Volts, Pulsed Avionics 1090 MHz GENERAL DESCRIPTION The MS2473 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the 1090MHz frequency band. The device has gold thin-film metallization for proven highest MTTF. Low thermal resistance
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MS2473
MS2473
1090MHz
25oC2
150oC
200oC
M112
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LTD121C3
Abstract: LTA121C32SF LTD121C30S 278.3
Text: Toshiba Mobile Display Co., Ltd 12.1 TYPE COLOR TFT-LCD MODULE LTA121C32SF p-Si TFT All information is subject to change without notice. Please read bottom notes. RoHS compatible FEATURES : (1) 12.1 SVGA color display with High Luminance (2) Built in Long Life Lamps(MTTF:60,000h)
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LTA121C32SF
LTD121C30S
LTD121C3
LTA121C32SF
278.3
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Untitled
Abstract: No abstract text available
Text: INFRARED PULSED LASER DIODE L6690-53 PRELIMINARY DATA FEATURES High speed rise time tr 2 ns typ. Output Power : 10 W (at DR=0.05 %) MTTF 20000hrs Compact APPLICATIONS Laser rader Range finder Optical trigger Security barrier Figure 1: Dimensional Outline (Unit: mm)
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L6690-53
20000hrs
SE-171-41
LLD1023E01
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Untitled
Abstract: No abstract text available
Text: INFRARED PULSED LASER DIODE L6690-53 PRELIMINARY DATA FEATURES High speed rise time tr 2 ns typ. Output Power : 10 W (at DR=0.05 %) MTTF 20000hrs Compact APPLICATIONS Laser rader Range finder Optical trigger Security barrier Figure 1: Dimensional Outline (Unit: mm)
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L6690-53
20000hrs
SE-171-41
LLD1023E02
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Untitled
Abstract: No abstract text available
Text: ASW235 5 ~ 6000 MHz MMIC Amplifier Features Description 19.5 dB Gain at 2 GHz 18 dBm P1dB at 2 GHz 30.5 dBm Output IP3 at 2 GHz 3.5 dB NF at 2 GHz MTTF > 100 Years Single Supply The ASW235, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide
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ASW235
ASW235,
OT363
OT363
2000ted
40x40
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c639
Abstract: No abstract text available
Text: ASX620 150 ~ 3000 MHz MMIC Amplifier Features Description 29.5 dB Gain at 900 MHz 33 dBm P1dB at 900 MHz 48 dBm Output IP3 at 900 MHz MTTF > 100 Years Two Power Supplies The ASX620, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide
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ASX620
ASX620,
c639
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Untitled
Abstract: No abstract text available
Text: ASL52D6 High Gain, Low Noise Amplifier Description Features 21 dB Gain at 1950 MHz 34 dBm OIP3 at 1950 MHz 18 dBm P1dB at 1950 MHz 0.65 dB NF at 1950 MHz S11 < -18 dB MTTF > 100 Years Single Supply ASL52D6 is an easy-to-use low noise, high gain,
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ASL52D6
ASL52D6
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LTM08C351
Abstract: DF19-2830SCFA DF19G-30S-1C TOSHIBA FL INVERTER ltm08c
Text: 21cm COLOR TFT-LCD MODULE 8.4 TYPE LTM08C351 (p-Si TFT) LIQUID CRYSTAL DISPLAY DIVISION PRODUCT INFORMATION FEATURES (1) 8.4” SVGA color display with High Brightness (350cd/m2). (2) Wide viewing angle. (3) Built in Long Life CCFLs (MTTF:50,000 h). ( Conditions / Ta:25℃, IFL:6mA(rms)(continuing lighting), fFL:40kHz )
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LTM08C351
350cd/m2)
40kHz
LTM08C351
DF19-2830SCFA
DF19G-30S-1C
TOSHIBA FL INVERTER
ltm08c
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NML0505S
Abstract: NML0509S NML0512S NML0515S NML1205S NML1209S NML1212S NML1215S 716S
Text: NML SERIES Isolated 2W Single Output DC-DC Converters SELECTION GUIDE Nominal Input Voltage Output Voltage Output Current Input Current at Rated Load MTTF1 Order Code V (V) (mA) (mA) (%) (pF) kHrs NML0505S 5 5 400 513 78 19 2327 NML0509S 5 9 222 492 81 27
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NML0505S
NML0509S
NML0512S
NML0515S
NML1205S
NML1209S
NML1212S
NML1215S
NML0505S
NML0509S
NML0512S
NML0515S
NML1205S
NML1209S
NML1212S
NML1215S
716S
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tpr1000
Abstract: high frequency transistor
Text: TPR 1000 1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz GENERAL DESCRIPTION The TPR 1000 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor
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25oC2
tpr1000
high frequency transistor
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NME2405D
Abstract: NME2405S NME2409D NME2409S NME2412D NME2412S NME2415D NME2415S NME4805D NME4809D
Text: NME 24V & 48V SERIES Isolated 1W Single Output DC-DC Converters SELECTION GUIDE Nominal Input Voltage Output Voltage Output Current MTTF1 Order Code V (V) (mA) (%) (pF) kHrs NME2405D 24 5 200 70 40 201 NME2409D 24 9 111 75 59 185 NME2412D 24 12 83 80 78
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NME2405D
NME2409D
NME2412D
NME2415D
NME2405S
NME2409S
NME2412S
NME2415S
NME4805D
NME4809D
NME2405D
NME2405S
NME2409D
NME2409S
NME2412D
NME2412S
NME2415D
NME2415S
NME4805D
NME4809D
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Untitled
Abstract: No abstract text available
Text: NTA SERIES Isolated 1W Dual Output SM DC-DC Converters SELECTION GUIDE Nominal Input Voltage Output Voltage Output Current V (V) (mA) (mA) (%) (pF) kHrs O rd e rC o d e5 Input Current at Rated Load Efficiency Isolation Capacitance MTTF1 NTA0505M 5 5 ±100
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NTA0505M
NTA0509M
NTA0512M
NTA0515M
NTA1205M
NTA1209M
CECC00802
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1075MP
Abstract: No abstract text available
Text: 1075MP 75 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW-1 The 1075MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for
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1075MP
55FW-1
1075MP
25oC2
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Untitled
Abstract: No abstract text available
Text: P410m 2.5-Inch SAS NAND Flash SSD Features P410m 2.5-Inch SAS NAND Flash SSD MTFDEAK100MAS-1S1AA, MTFDEAK200MAS-1S1AA, MTFDEAK400MAS-1S1AA Features • • • • • • • • • • • • • • Reliability – MTTF: 2 million device hours2 – Static and dynamic wear leveling
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P410m
MTFDEAK100MAS-1S1AA,
MTFDEAK200MAS-1S1AA,
MTFDEAK400MAS-1S1AA
512-byte
128-entry
100GB
09005aef84be6ef8
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