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    2.2GHZ Search Results

    2.2GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DC753A Analog Devices LT5526EUF - 1MHz-2GHz Mixer Visit Analog Devices Buy
    DC945A Analog Devices LT5572EUF - 2GHz I/Q Modulator Visit Analog Devices Buy
    LTC5549IUDB#TRPBF Analog Devices 2GHz to 14GHz Microwave Mixer Visit Analog Devices Buy
    LTC5548IUDB#TRPBF Analog Devices 2GHz to 14GHz Microwave Mixer Visit Analog Devices Buy
    LTC5549IUDB#TRMPBF Analog Devices 2GHz to 14GHz Microwave Mixer Visit Analog Devices Buy
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    2.2GHZ Price and Stock

    ADLINK Technology Inc CORE2 DUE 2.2GHZ UFCPGA-478

    CPU CORE2 DUO T7500 - Bulk (Alt: CORE2 DUE 2.2GHZ UFCPGA-478)
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    Avnet Americas CORE2 DUE 2.2GHZ UFCPGA-478 Bulk 13 Weeks 1
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    ADLINK Technology Inc CORE I3-2330E 2.2GHZ FCPGA988

    CORE I3-2330E, 2.2GHZ, 3MB CACHE, - Bulk (Alt: CORE I3-2330E 2.2G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CORE I3-2330E 2.2GHZ FCPGA988 Bulk 13 Weeks 1
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    ADLINK Technology Inc Xeon E5-2650 v4 2.2GHz FCLGA2011-3

    CPU - Central Processing Units CPU, Xeon E5-2650 v4, 2.20GHz, 12-Core, 30MB SmartCache, Broadwell, CM8066002031103 SR2N3, Step:M0, MM# 947616
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    Mouser Electronics Xeon E5-2650 v4 2.2GHz FCLGA2011-3
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    ADLINK Technology Inc Celeron G1820TE 2.2GHz FCLGA1150

    CPU - Central Processing Units CPU, Celeron G1820TE, 2.20GHz, 2-Core, 2MB SmartCache, Haswell, CM8064601618705 SR1T6, Step:C0, MM# 932857
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    Mouser Electronics Celeron G1820TE 2.2GHz FCLGA1150
    • 1 $78.25
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    • 100 $67.15
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    ADLINK Technology Inc CPU i3-9100TE 2.2GHz LGA1151

    CPU - Central Processing Units CPU, Core i3-9100TE, 2.20GHz, 4-Core, 6MB SmartCache, Coffee Lake, CM8068404404629 SRGR0, Step:U0, MM# 999LMZ
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    Mouser Electronics CPU i3-9100TE 2.2GHz LGA1151
    • 1 $209.37
    • 10 $200.52
    • 100 $196.1
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    Find more 2.2GHZ price and stock on Findchips.com

    2.2GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J406

    Abstract: J248 J425 ultrarf UPF2245 J242
    Text: URFDB Sec 14_2245 11/3/99 11:23 AM Page 14-1 UPF2245 45W, 2.2GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.2GHz. Rated with a minimum output power of 45W, it is ideal for CDMA, TDMA,


    Original     		PDF UPF2245 30dBc J406 J248 J425 ultrarf UPF2245 J242

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is


    Original     		PDF SPB-2026Z SPB-2026Z 10mil EDS-105436

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is


    Original     		PDF SPB-2026Z SPB-2026Z 10mil EDS-105436

    Guide for Common Mode Filter Design Coilcraft

    Abstract: 0603CS LTC2208 LTC6400 LTC6401 LTC6401-20 LTC6401CUD-8 LTC6401IUD-8 g1318 LT 735
    Text: LTC6401-8 2.2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2.2GHz –3dB Bandwidth Fixed Gain of 2.5V/V 8dB –92dBc IMD3 at 70MHz (Equivalent OIP3 = 50dBm)


    Original     		PDF LTC6401-8 DC-140MHz 92dBc 70MHz 50dBm) 140MHz 44dBm) 135mW) 16-Lead LT6600-5 Guide for Common Mode Filter Design Coilcraft 0603CS LTC2208 LTC6400 LTC6401 LTC6401-20 LTC6401CUD-8 LTC6401IUD-8 g1318 LT 735

    Untitled

    Abstract: No abstract text available
    Text: JXWBHX-T-1900-2200-20-50 1.9-2.2GHz Coaxial Circulator Test report is for reference only. TEST REPORT For JXWBHX-T-1900-2200-20-50 American Accurate Components, Inc. 1 188 Technology Drive, Unit H, Irvine, CA 92618 Tel: 949-453-9888 Š Fax: 949-453-8889 Š Email: sales@aacix.com


    Original     		PDF JXWBHX-T-1900-2200-20-50

    SPB2026Z

    Abstract: SPB-2026Z TL 188 TRANSISTOR PIN DIAGRAM SPB-2026
    Text: Advanced Information SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is


    Original     		PDF SPB-2026Z 10mil EDS-105436 SPB-2026Z SPB2026Z TL 188 TRANSISTOR PIN DIAGRAM SPB-2026

    Untitled

    Abstract: No abstract text available
    Text: Value 6U CompactPCI Intel® Core 2 Duo Processor Blade with Dual Independent Displays cPCI-6965 Series Features KB/MS DVI-I 6U cPCI Blades LPT DVI-D LAN COM USB PMC COM cPCI-6965 Low power Intel® Core™2 Duo 2.2GHz Dual Channel DDR2-667 SODIMM, up to 4GB


    Original     		PDF cPCI-6965 cPCI-6965 DDR2-667 cPCI-6965D T7500) 800MHz 533MHz GME965 S-R6111

    spa1526

    Abstract: No abstract text available
    Text: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs


    Original     		PDF SPA1526Z SOF-26 SPA1526Z SPA1526ZSQ SPA1526ZSR 850MHz spa1526

    RFG1M20180

    Abstract: ATC800B820JT
    Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to


    Original     		PDF RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS120418 ATC800B820JT

    RFG1M20180SB

    Abstract: j35 fet RFG1M20180SQ
    Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to


    Original     		PDF RFG1M20180 RFG1M20180 RF400-2 -38dBc -55dBc DS120803 RFG1M20180SB j35 fet RFG1M20180SQ

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to


    Original     		PDF RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS110406

    MAX108CHC

    Abstract: MAX104 MAX106 MAX108 2 way rf splitter circuit diagram transistor P32
    Text: 19-1492; Rev 1; 10/01 KIT ATION EVALU E L B AVAILA ±5V, 1.5Gsps, 8-Bit ADC with On-Chip 2.2GHz Track/Hold Amplifier The analog input is designed for either differential or single-ended use with a ±250mV input voltage range. Dual, differential, positive-referenced emitter-coupled


    Original     		PDF 250mV MAX108 MAX108 MAX108CHC MAX104 MAX106 2 way rf splitter circuit diagram transistor P32

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed


    Original     		PDF RFG1M20090 RFG1M20090 DS130823

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20180 RFG1M20180 180W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20180 is optimized for commercial infrastructure applications in the 1.8GHz to 2.2GHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density gallium nitride GaN semiconductor process optimized for high


    Original     		PDF RFG1M20180 RFG1M20180 DS130822

    cph6006

    Abstract: ITR07141 ITR07142 ITR07143 ITR07144 ITR07145 ITR07146 2146A
    Text: Ordering number : ENN7690 CPH6006 NPN Epitaxial Planar Silicon Transistor CPH6006 Video Output Driver, High-Frequency Amplifier Applications Features • • Package Dimensions High fT fT=2.2GHz typ . Large current (IC=300mA). Adoption of FBET process. unit : mm


    Original     		PDF ENN7690 CPH6006 300mA) CPH6006] cph6006 ITR07141 ITR07142 ITR07143 ITR07144 ITR07145 ITR07146 2146A

    egnb045mk

    Abstract: JESD22-A114
    Text: EGNB045MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 47.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 13dB(typ.) @ f=2.2GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGNB045MK egnb045mk JESD22-A114

    SY100EL35

    Abstract: SY100EL35ZC SY100EL35ZCTR SY10EL35 SY10EL35ZC SY10EL35ZCTR
    Text: SY10EL35 SY100EL35 FINAL JK FLIP-FLOP FEATURES • ■ ■ ■ ■ DESCRIPTION 525ps propagation delay 2.2GHz toggle frequency High bandwidth output transistions Internal 75KΩ input pull-down resistors Available in 8-pin SOIC package The SY10/100EL35 are high-speed JK Flip-Flops. The


    Original     		PDF SY10EL35 SY100EL35 525ps SY10/100EL35 SY10EL35ZCTR SY100EL35ZC SY100EL35ZCTR SY100EL35 SY100EL35ZC SY100EL35ZCTR SY10EL35 SY10EL35ZC SY10EL35ZCTR

    2SC4504

    Abstract: ITR07141 ITR07142 ITR07143 ITR07144 ITR07145 cm 2038A
    Text: Ordering number:ENN3160A NPN Epitaxial Planar Silicon Transistor 2SC4504 High-Definition CRT Display Video Output Driver Applications Features Package Dimensions • High fT fT=2.2GHz typ · Large current (IC=300mA) · Adoption of FBET process. unit:mm 2038A


    Original     		PDF ENN3160A 2SC4504 300mA) 2SC4504] 25max 2SC4504 ITR07141 ITR07142 ITR07143 ITR07144 ITR07145 cm 2038A

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATIONS RF Coaxial Connector Mechanical Contact Captivation Force: N/A Durability: 500Cycles F WITH SHIELDING FOR RF CONN Electrical Impedance: 75Ω Nominal Frequence Range: 900MHz~2.2GHz Centre Contact Resistance: 5mΩ Outer Contact Resistance: 2.5mΩ


    Original     		PDF 500Cycles 900MHz 50-T4

    XC1900E-03

    Abstract: xinger 1900e hybrid coupler 3dB 180 ALM1222 ALM-1222 ALM-1322 RO4350
    Text: ALM-1222 Very Low NF, High Gain and Adjustable High Linearity Balanced Amplifier Module for 1.8GHz to 2.2GHz Applications Application Note 5266 Introduction • Lower total cost – the integrated DC biasing circuit for temperature stability reduces the bill of material


    Original     		PDF ALM-1222 ALM-1222 AV01-0101EN XC1900E-03 xinger 1900e hybrid coupler 3dB 180 ALM1222 ALM-1322 RO4350

    frankfurt oder

    Abstract: 617db-1018 Megaxess TFB2208 frankfurt TFB2208T
    Text: Preliminary Technical Data TFB2208T M EMegaxess G AGmbH X Deutschland ESS Edition 09/00 2.2GHz RF Broad Band Amplifier Short Description Features • Single ended input 50Ω The bipolar integrated circuit TFB2208T is a RF broad band amplifier for several


    Original     		PDF TFB2208T frankfurt oder 617db-1018 Megaxess TFB2208 frankfurt TFB2208T

    PE9501

    Abstract: PE9601 Q3236 9601-11
    Text: Product Specification PE9601 2.2GHz Integer-N PLL for Rad Hard Applications Description Peregrine’s PE9601 is a high performance integer-N PLL capable of frequency synthesis up to 2.2 GHz. The device is designed for superior phase noise performance while providing


    Original     		PDF PE9601 PE9601 PE9501 Q3236 9601-11

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE TD7623FN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tn7fi?iFM • i r a ■ ■V 3-WIRE AND |2C BUS SYSTEM, 2.2GHz DIRECT TWO MODULUS-TYPE FREQUENCY SYNTHESIZER FOR CATV The TD7623FN can be combined with a micro CPU to


    OCR Scan     		PDF TD7623FN TD7623FN 27-bit SSOP16-P-225-0

    GRH111

    Abstract: GRH111-0 GRH111-27 MGFS52BN2122A GRH111-1
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SVIOFS52BM2122Â 2.1 - 2.2 GHz BAND 160W GaAs FET D E S C R IP TIO N The MGFS52BN2122A is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees


    OCR Scan     		PDF MGFS52BN2122Ã MGFS52BN2122A 17GHz GF-49 14GHz GR708â GR40-1000 GRH111 GRH111-0 GRH111-27 GRH111-1