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    EFA025 Search Results

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    EFA025 Price and Stock

    Essentra Components EFA02-52-001

    DUST CAP FOR 2.5MM DIA FERRULE
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    DigiKey EFA02-52-001 Bulk
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    Onlinecomponents.com EFA02-52-001
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    Essentra Components EFA02-50-001

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    Onlinecomponents.com EFA02-50-001
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    Excelics Semiconductor Inc EFA025A-70

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    Bristol Electronics EFA025A-70 245
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    Excel Cell Electronic Co Ltd EFA025A-70

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    Bristol Electronics EFA025A-70 156
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    EFA025 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    EFA02-52-001 Essentra Components Catalog Fiber Optic Connectors - Accessories, Connectors, Interconnects, DUSTCAP,BLACK,FERRULE ONLY Original PDF
    EFA025A Excelics Semiconductor 6-12V low distortion GaAs power FET Original PDF
    EFA025A-70 Excelics Semiconductor 6-10V low distortion GaAs power FET Original PDF
    EFA025AL Excelics Semiconductor 8-12V high gain GaAs power FET Original PDF

    EFA025 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    100MIL

    Abstract: GaAs FET EFA025A
    Text: EFA025A-100P Low Distortion GaAs Power FET UPDATED 11/17/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +21.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		PDF EFA025A-100P 100MIL 12GHz 18GHz GaAs FET EFA025A

    epa025

    Abstract: excelics epa025 EFA072A EFA025A excelics w2343 AVANTEK transistor
    Text: Hydrogen Test on EFA072A and EFA025A Background It was reported from the field that when EFA072A devices from W234-2 were life tested in hydrogen environment, the Idss of the DUT has increased by 15% or so in a few days. However, when the devices were life tested in open air


    Original     		PDF EFA072A EFA025A W234-2 EFA072 W234-3, 48hrs) 168hrs) epa025 excelics epa025 EFA025A excelics w2343 AVANTEK transistor

    EFA025AL

    Abstract: No abstract text available
    Text: EFA025AL High Gain GaAs Power FET FEATURES • • • • • • 420 +20.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY,


    Original     		PDF EFA025AL 12GHz 18GHz EFA025AL

    EFA025A-70

    Abstract: No abstract text available
    Text: EFA025A-70 Low Distortion GaAs Power FET UPDATED 04/28/2006 FEATURES • • • • • • • • None-Hermetic Low Cost Ceramic 70mil Package +20.0 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 12GHz 7.0 dB Power Gain at 18GHz Typical 1.50 dB Noise Figure and


    Original     		PDF EFA025A-70 70mil 12GHz 18GHz Rn/50 EFA025A-70

    EFA025AL

    Abstract: No abstract text available
    Text: Excelics EFA025AL DATA SHEET High Gain GaAs Power FET • • • • • • 420 +20.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY,


    Original     		PDF EFA025AL 12GHz 18GHz EFA025AL

    EFA025A

    Abstract: No abstract text available
    Text: Excelics EFA025A DATA SHEET Low Distortion GaAs Power FET • • • • • • •  +21.0dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE


    Original     		PDF EFA025A 12GHz 18GHz Rn/50 EFA025A

    EFA025A-70

    Abstract: EFA025
    Text: Excelics EFA025A-70 DATA SHEET Low Distortion GaAs Power FET     6 6  '  • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +20.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED GAIN AT 12GHz


    Original     		PDF EFA025A-70 70mil 12GHz 18GHz EFA025A-70 EFA025

    EFA025A

    Abstract: No abstract text available
    Text: EFA025A Low Distortion GaAs Power FET FEATURES 420 50 • • • • • • • +21.0dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE


    Original     		PDF EFA025A 12GHz 18GHz 12GHz EFA025A

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF

    EFA018A

    Abstract: EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70
    Text: 310 De Guigne Drive, Sunnyvale, CA 94085 Tel: 408-737-1711 Fax: 408-737-1868 Quick Reference Guide for 2 GHz Applications Device Type Bias A Discrete Devices: EPB018A5 EPB018A7 EPB018A9 EPB025A 2V/15mA 2V/15mA 2V/15mA 2V/15mA 15 15 15 15 0.4 0.5 0.6 0.5 20


    Original     		PDF EPB018A5 EPB018A7 EPB018A9 EPB025A V/15mA EFA018A EFA025A EFA018A EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70

    Untitled

    Abstract: No abstract text available
    Text: FIBER MANAGEMENT & DUST CAPS EFA70-01 900 Micron Transition Boot EFA70-07 900 Micron Strain Relief Boot 19.9mm 4.6 mm Ø0.9mm 22.2mm Ø1.1 mm Ø6.5 mm Specifications: s -ATERIAL40% s #OLOR"LACK Specifications: s -ATERIAL40% s #OLOR"LACK Features:


    Original     		PDF EFA70-01 EFA70-07 EFA70-07-001 EFA70-01-001 EFA52 EFA52-02-ASS EFA52-05-ASS EFA02-43 EFA02-52-001 EFA02-43-001

    b1415

    Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89
    Text: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs


    Original     		PDF RTC/5/01/PSINTRO 24-hour 200oC, 275oC b1415 GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89

    Curtice

    Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
    Text: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE


    Original     		PDF EFA018A 00E-12 40E-14 00E-08 63E-13 80E-14 00E-14 EFA025A Curtice EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A

    EPA018A

    Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
    Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the


    Original     		PDF EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C