Untitled
Abstract: No abstract text available
Text: ECCOSORB QR-13AF Lossy, Flexible, Fire Retardant, Foam Microwave Absorber Material Characteristics • • • • • ECCOSORB® QR-13AF foam is an environmentally friendly material free of antimony and chlorinated polymers High loss, flexible, non-magnetic,
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QR-13AF
QR-13AF
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ECCOSORB
Abstract: No abstract text available
Text: ECCOSORB MCS Thin, Flexible, Broadband Absorbers Material Characteristics • • • • • Instructions for Use Thin, flexible, high-loss, magnetically loaded, electrically non-conductive silicone rubber sheet Frequency range from 800 MHz to 18 GHz Impervious to moisture and can be subjected to
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Untitled
Abstract: No abstract text available
Text: ECCOSORB FGM Thin, Flexible, Impervious, Broadband Absorbers Material Characteristics • • • • • • • Thin, flexible, broadband, magnetically loaded, silicone absorber sheets Flame resistant and impervious to moisture Does not support fungal growth per MIL-STD-810E
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MIL-STD-810E
FGM-40
FGM-125
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Eccosorb HR 30
Abstract: No abstract text available
Text: ECCOSORB BSR High-Loss, Ultra-Thin, Elastomeric Microwave Absorber Material Characteristics • • • • • Thin, flexible, high-loss, electrically non-conductive silicone rubber sheet Available in two types, ECCOSORB® BSR-1 and ECCOSORB® BSR-2 Frequency range from 6 GHz to mm wave
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Abstract: No abstract text available
Text: ECCOSORB CRS High-Loss, Two-Part Castable RTV Silicone Absorber Material Characteristics Instructions for Use • • Part A is supplied as a high viscosity paste. In all cases a small amount of Part B is added. See table below • To insure void-free castings, the entrapped air should
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Abstract: No abstract text available
Text: ECCOSORB GDS High-Loss Silicone Rubber Sheet Material Characteristics • • • • • • Thin, flexible, electrically non-conductive silicone rubber sheet Frequency range from 6 - 35 GHz Does not support fungal growth per MIL-STD-810E Impervious to moisture and can be subjected to
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MIL-STD-810E
UL-94
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MF-190
Abstract: No abstract text available
Text: ECCOSORB MF Lossy, Magnetically Loaded, Machinable Stock Material Characteristics Related E&C Products • • • • • • Rigid magnetically loaded epoxide stock For increased temperature handling to 260 °C, refer to the electrically equivalent ECCOSORB® MF500F
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MF500F
MIL-STD-810E
MF-190
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Untitled
Abstract: No abstract text available
Text: ECCOSORB LS Lossy, Flexible, Foam Microwave Absorber Material Characteristics • • • • • • • ECCOSORB® LS is the most widely known, used, and recommended urethane foam sheet product. High loss, low density, and very flexible ECCOSORB® LS obtains it’s microwave properties via a
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UL-94-HF-1
QR-13AF
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eccosorb AN-75
Abstract: No abstract text available
Text: ECCOSORB AN Flexible Foam Sheet Broadband Microwave Absorbers Material Characteristics • • • • • • Availability Lightweight, flexible, broadband, open-cell, polyurethane foam absorber Carbon loaded, laminated polyurethane sheets Frequency range from 600 MHz -40 GHz
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MIL-STD-810E
eccosorb AN-75
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Eccosorb
Abstract: No abstract text available
Text: ECCOSORB HR Lightweight Flat-Sheet Broadband Microwave Absorbers Material Characteristics • • • • • • Lightweight, flexible, flat-sheet broadband absorber Reticulated open-cell polyurethane foam sheet with a controlled conductivity gradient carbon loading system
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g30n60
Abstract: No abstract text available
Text: HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT Features The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at
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HGTG30N60B3
HGTG30N60B3
TA49170.
O-247
g30n60
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G30N60
Abstract: TA49053 TA49172 TA49170 G30N60B3 G30N60B3D HGTG30N60B3D LD26 HGTG30N60b 200pulse
Text: HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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HGTG30N60B3D
O-247
HGTG30N60B3D
150oC.
TA49170.
TA49053.
G30N60
TA49053
TA49172
TA49170
G30N60B3
G30N60B3D
LD26
HGTG30N60b
200pulse
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G40N60
Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3
Text: HGTG40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction
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HGTG40N60C3
HGTG40N60C3
150oC.
100ns
150oC
G40N60
LD26
RHRP3060
g40n60c3
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p12n60c3
Abstract: 4040 FAIRCHILD P12N60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 RHRP1560 S12N60C3 TA49123
Text: HGTP12N60C3, HGT1S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTP12N60C3,
HGT1S12N60C3S
HGTP12N60C3
HGT1S12N60C3S
150oC.
p12n60c3
4040 FAIRCHILD
P12N60
HGT1S12N60C3S9A
LD26
RHRP1560
S12N60C3
TA49123
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1n120cn
Abstract: GEM X 365 1N120C TB334 HGTD1N120CNS HGTD1N120CNS9A HGTP1N120CN TA49317
Text: HGTD1N120CNS, HGTP1N120CN Data Sheet January 2000 6.2A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120CNS, and the HGTP1N120CN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and
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HGTD1N120CNS,
HGTP1N120CN
HGTP1N120CN
1n120cn
GEM X 365
1N120C
TB334
HGTD1N120CNS
HGTD1N120CNS9A
TA49317
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FGB40N6S2
Abstract: 40N6S2 FGH40N6S2 FGH50N6S2D FGP40N6S2 T125 TA49438
Text: FGH40N6S2, FGP40N6S2, FGB40N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH40N6S2, FGP40N6S2, and FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with
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FGH40N6S2,
FGP40N6S2,
FGB40N6S2
FGB40N6S2
100kHz
40N6S2
FGH40N6S2
FGH50N6S2D
FGP40N6S2
T125
TA49438
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18n120bnd
Abstract: HGTG18N120BND 12V 200A Relay LD26 TA49304
Text: HGTG18N120BND Data Sheet January 2000 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best
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HGTG18N120BND
HGTG18N120BND
18n120bnd
12V 200A Relay
LD26
TA49304
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g7n60b3d
Abstract: igbt g7n60b3d G7N60B3 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 2MH22 150OC
Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTP7N60B3D,
HGT1S7N60B3DS
HGTP7N60B3D
HGT1S7N60B3DS
150oC
TA49190.
RHRD660
TA49057)
g7n60b3d
igbt g7n60b3d
G7N60B3
HGT1S7N60B3DS9A
RHRD660
2MH22
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G20N120CN
Abstract: HGTG20N120CN HGTG20N120CND LD26 G20N120
Text: HGTG20N120CN Data Sheet January 2000 63A, 1200V, NPT Series N-Channel IGBT Features The HGTG20N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device
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HGTG20N120CN
HGTG20N120CN
340ns
150oC
G20N120CN
HGTG20N120CND
LD26
G20N120
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G3N60C3
Abstract: G3N60 G3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
Text: HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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HGTP3N60C3D,
HGT1S3N60C3DS
HGT1S3N60C3DS
150oC.
TA49113.
TA49055.
G3N60C3
G3N60
G3N60C3D
HGT1S3N60C3DS9A
HGTP3N60C3D
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40N60A4
Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347
Text: HGTG40N60A4 TM Data Sheet April 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance
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HGTG40N60A4
HGTG40N60A4
150oC.
100kHz
200kHz
40N60A4
HGT1Y40N60A4D
LD26
TA49347
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zener 7.5 spice model
Abstract: HGT1S5N120BNS HGTP5N120BN LD26 RHRD6120 TA49308 TB334 IC-2521 5n120bn
Text: HGTP5N120BN, HGT1S5N120BNS Data Sheet December 2001 21A, 1200V, NPT Series N-Channel IGBTs Features The HGTP5N120BN and the HGT1S5N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and
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HGTP5N120BN,
HGT1S5N120BNS
HGTP5N120BN
HGT1S5N120BNS
zener 7.5 spice model
LD26
RHRD6120
TA49308
TB334
IC-2521
5n120bn
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TRANZORB
Abstract: HGTD8P50G1 HGTD8P50G1S
Text: HGTD8P50G1, HGTD8P50G1S S E M I C O N D U C T O R 8A, 500V P-Channel IGBTs March 1997 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V VCE SAT • Typical Fall Time - 1800ns EMITTER COLLECTOR GATE • High Input Impedance (FLANGE) COLLECTOR • TJ = +150oC
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HGTD8P50G1,
HGTD8P50G1S
O-251AA
1800ns
150oC
O-252AA
HGTD8P50G1
HGTD8P50G1S
1-800-4-HARRIS
TRANZORB
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40N60A4
Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347
Text: HGTG40N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a
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HGTG40N60A4
HGTG40N60A4
150oC.
100kHz
200kHz
40N60A4
HGT1Y40N60A4D
LD26
TA49347
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