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    HGTG30N60B Price and Stock

    onsemi HGTG30N60B3

    IGBT 600V 60A 208W TO247
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    DigiKey HGTG30N60B3 Tube
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    Avnet Americas HGTG30N60B3 265
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    Bristol Electronics HGTG30N60B3 57 2
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    • 10 $3.2032
    • 100 $2.2999
    • 1000 $2.2999
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    Quest Components HGTG30N60B3 45
    • 1 $6.6
    • 10 $3.3
    • 100 $3.3
    • 1000 $3.3
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    Rochester Electronics LLC HGTG30N60B3

    600 V, NPT IGBT
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    DigiKey HGTG30N60B3 Tube 95
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    onsemi HGTG30N60B3D

    IGBT 600V 60A TO247-3
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    DigiKey HGTG30N60B3D Tube
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    Rochester Electronics LLC HGTG30N60B3_NL

    IGBT, 60A, 600V, N-CHANNEL
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    DigiKey HGTG30N60B3_NL Bulk 51
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    Harris Semiconductor HGTG30N60B3

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    Bristol Electronics HGTG30N60B3 85 1
    • 1 $6.608
    • 10 $4.2952
    • 100 $2.8632
    • 1000 $2.8632
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    Quest Components HGTG30N60B3 68
    • 1 $8.85
    • 10 $4.425
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    HGTG30N60B3 24
    • 1 $11.88
    • 10 $10.56
    • 100 $9.768
    • 1000 $9.768
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    Rochester Electronics HGTG30N60B3 16,153 1
    • 1 $3.19
    • 10 $3.19
    • 100 $3
    • 1000 $2.71
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    Find more HGTG30N60B price and stock on Findchips.com

    HGTG30N60B Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HGTG30N60B3 Fairchild Semiconductor 60 A, 600 V, UFS N-Channel IGBT Original PDF
    HGTG30N60B3 Fairchild Semiconductor 600V, UFS Series N-Channel IGBT Original PDF
    HGTG30N60B3 Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF
    HGTG30N60B3 Intersil IGBT Chip, N Channel, 600V, TO-247, 3-Pin Original PDF
    HGTG30N60B3 Intersil 60A, 600V, UFS Series N-Channel IGBT Original PDF
    HGTG30N60B3 Intersil 60A, 600V, UFS Series N-Channel IGBT Scan PDF
    HGTG30N60B3D Fairchild Semiconductor 60 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTG30N60B3D Fairchild Semiconductor 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTG30N60B3D Fairchild Semiconductor 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTG30N60B3D Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF
    HGTG30N60B3D Intersil 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTG30N60B3D Intersil IGBT Chip, N Channel, 600V, TO-247, 3-Pin Original PDF
    HGTG30N60B3D Intersil 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Scan PDF
    HGTG30N60B3D_NL Fairchild Semiconductor 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTG30N60B3_NL Fairchild Semiconductor 600V, UFS Series N-Channel IGBT Original PDF

    HGTG30N60B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    g30n60

    Abstract: No abstract text available
    Text: HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT Features The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at


    Original     		PDF HGTG30N60B3 HGTG30N60B3 TA49170. O-247 g30n60

    G30N60

    Abstract: TA49053 TA49172 TA49170 G30N60B3 G30N60B3D HGTG30N60B3D LD26 HGTG30N60b 200pulse
    Text: HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		PDF HGTG30N60B3D O-247 HGTG30N60B3D 150oC. TA49170. TA49053. G30N60 TA49053 TA49172 TA49170 G30N60B3 G30N60B3D LD26 HGTG30N60b 200pulse

    P channel 600v 20a IGBT

    Abstract: hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3
    Text: HGTG20N60C3R HGTG20N60C3DR 2.3V TBD µJ HGTG30N60C3R HGTG30N60C3DR 2.3V TBD µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


    Original     		PDF HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG30N60C3R P channel 600v 20a IGBT hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3

    G30N60B3

    Abstract: G30N60 G30N60B3 hARRIS TA49170 G30N60B
    Text: HGTG30N60B3 S E M I C O N D U C T O R 60A, 600V, UFS Series N-Channel IGBT January 1998 Features Description • 60A, 600V, TC = 25oC The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. TA49170. 60nts 1-800-4-HARRIS G30N60B3 G30N60 G30N60B3 hARRIS TA49170 G30N60B

    HGTP7N60B3D

    Abstract: 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S
    Text: 2-3 HGTG20N60C3R HGTG20N60C3DR 2.3V 3000µJ HGTG27N60C3R HGTG27N60C3DR 2.3V 2000µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


    Original     		PDF HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG27N60C3R HGTP7N60B3D 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S

    G30N60B3

    Abstract: TA49170
    Text: HGTG30N60B3 Data Sheet April 2013 600 V, NPT IGBT Features The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where


    Original     		PDF HGTG30N60B3 HGTG30N60B3 TA49170. O-247 G30N60B3 O-247 G30N60B3 TA49170

    Untitled

    Abstract: No abstract text available
    Text: IGBT ТРАНЗИСТОРЫ Наименование HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 HGTP3N60B3 HGTP7N60B3 HGTP7N60B3D IRG4BC20UD IRG4BC30F IRG4BC30U IRG4BC30UD


    Original     		PDF HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3

    g30n60b3

    Abstract: G30N60 HGTG30N60B3 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560
    Text: HGTG30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 G30N60 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560

    G30N60B3D

    Abstract: G30N60 G30N60B3 HGTG30N60B3D LD26 TA49053 TA49170 TA49172
    Text: HGTG30N60B3D Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60B3D HGTG30N60B3D 150oC. TA49170. TA49053. 150oC G30N60B3D G30N60 G30N60B3 LD26 TA49053 TA49170 TA49172

    G30N60B3D

    Abstract: HGTG30N60B3D TA49172
    Text: HGTG30N60B3D Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60B3D HGTG30N60B3D 150oC. TA49170. TA49053. G30N60B3D TA49172

    g30n60b3

    Abstract: HGTG30N60B3
    Text: HGTG30N60B3 Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. TA49170. g30n60b3

    G30N60B3D

    Abstract: TA49170 TA49172 HGTG30N60B3D LD26 TA49053
    Text: HGTG30N60B3D Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60B3D HGTG30N60B3D 150oC. TA49170. TA49053. 150oC G30N60B3D TA49170 TA49172 LD26 TA49053

    G30N60B3D

    Abstract: G30N60B3 HGT4E30N60B3DS G30N60 HGTG30N60B3D LD26 TA49053 TA49170 TA49172
    Text: HGTG30N60B3D, HGT4E30N60B3DS Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 E The HGTG30N60B3D, and HGT4E30N60B3DS are MOS gated high voltage switching devices combining the best


    Original     		PDF HGTG30N60B3D, HGT4E30N60B3DS O-247 HGT4E30N60B3DS 150oC. TA49170. TA49053. O-268AA G30N60B3D G30N60B3 G30N60 HGTG30N60B3D LD26 TA49053 TA49170 TA49172

    g30n60b3

    Abstract: HGTG30N60B3 HGTG30N60B3D LD26 TA49170
    Text: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 HGTG30N60B3D LD26 TA49170

    Untitled

    Abstract: No abstract text available
    Text: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC

    G30N60B3

    Abstract: GE 443 HGTG30N60B3 HGTG30N60B3D LD26 TA49170
    Text: HGTG30N60B3 Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC G30N60B3 GE 443 HGTG30N60B3D LD26 TA49170

    G30N60B3

    Abstract: HGTG30N60B3 LD26 TA49170
    Text: HGTG30N60B3 Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC G30N60B3 LD26 TA49170

    g30n60b3

    Abstract: HGTG30N60B3 GE 443 HGTG30N60B3D LD26 TA49170 G30N60
    Text: HGTG30N60B3 Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 GE 443 HGTG30N60B3D LD26 TA49170 G30N60

    8508 zener

    Abstract: G30N60b3d TA49172 HGTG30N60B3D LD26 TA49053 TA49170
    Text: HGTG30N60B3D TM Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60B3D HGTG30N60B3D 150oC. TA49170. TA49053. 150oCy 8508 zener G30N60b3d TA49172 LD26 TA49053 TA49170

    g30n60b3

    Abstract: HGTG30N60B3 8508 zener g30n60 HGTG30N60B3D LD26 TA49170 G30N60B
    Text: HGTG30N60B3 TM Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 8508 zener g30n60 HGTG30N60B3D LD26 TA49170 G30N60B

    IGBT 200A 1200V

    Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D


    OCR Scan     		PDF bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40

    G30N60

    Abstract: TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 LG 631 LG 631 IC
    Text: in t e HGTG30N60B3D r r ii J a n u a ry . m D ata S h eet 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    OCR Scan     		PDF HGTG30N60B3D HGTG30N60B3D TA49170. TA49053. G30N60 TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 LG 631 LG 631 IC

    g30n60b3

    Abstract: G30N60 TA49170 MOSFET 600v 60a vqe 24 d C110 HGTG30N60B3 LD26 hgtp30n60b3d tr c110
    Text: HGTG30N60B3 in t e r r ii J a n u a ry . m D ata S h eet 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    OCR Scan     		PDF HGTG30N60B3 HGTG30N60B3 TA49170. O-247ration g30n60b3 G30N60 TA49170 MOSFET 600v 60a vqe 24 d C110 LD26 hgtp30n60b3d tr c110

    Untitled

    Abstract: No abstract text available
    Text: HARRIS GENERATION III ULTRA-FAST SWITCHING "UFS" IGBT FUTURE PRODUCTS o J\X Ju TO-252AA TO-220AB TO-247 600V HGTD5N60B3 HGTD7N60B3 HGTD5N60B3S HGTD7N60B3S HGTP12N60B3 HGTG30N60B3 HGTG40N60B3 1200V HGTD4N120B3 HGTD6N120B3 HGTD4N120B3S HGTD6N120B3S HGTP10N120B3


    OCR Scan     		PDF O-251AA HGTD5N60B3 HGTD7N60B3 HGTD4N120B3 HGTD6N120B3 O-252AA HGTD5N60B3S HGTD7N60B3S HGTD4N120B3S HGTD6N120B3S