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Citizen Finedevice Co Ltd CSX-252FAE6000000T XTAL OSC XO 6.0000MHZ CMOS SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CSX-252FAE6000000T	Cut Tape	8,444		1	1 $1.67 10 $1.436 100 $1.239 1000 $1.07032 10000 $1.07032	Buy Now
	CSX-252FAE6000000T	Digi-Reel	8,444		1	1 $1.67 10 $1.436 100 $1.239 1000 $1.07032 10000 $1.07032	Buy Now
	CSX-252FAE6000000T	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.99856	Buy Now
Newark	CSX-252FAE6000000T	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.99	Buy Now
Abracon Corporation ASE-60.000MHZ-L-C-T XTAL OSC XO 60.0000MHZ CMOS SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ASE-60.000MHZ-L-C-T	Cut Tape	952		1	1 $1.35 10 $1.173 100 $1.0197 1000 $0.92448 10000 $0.92448	Buy Now
	ASE-60.000MHZ-L-C-T	Digi-Reel	952		1	1 $1.35 10 $1.173 100 $1.0197 1000 $0.92448 10000 $0.92448	Buy Now
SiTime Corporation SIT8008AI-13-18E-6.000000 MEMS OSC XO 6.0000MHZ H/LV-CMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT8008AI-13-18E-6.000000		624		1	1 $1.2 10 $1.043 100 $0.9062 1000 $0.78757 10000 $0.68465	Buy Now
SiTime Corporation SIT1602BI-12-XXE-60.000000 MEMS OSC XO 60.0000MHZ H/LV-CMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT1602BI-12-XXE-60.000000		2		1	1 $1.48 10 $1.285 100 $1.1171 1000 $0.97092 10000 $0.84411	Buy Now
Seiko Epson Corporation SG-636PCE-6.0000MC0 XTAL OSC XO 6.0000MHZ CMOS SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SG-636PCE-6.0000MC0	Reel			1,000	1 - 10 - 100 - 1000 $1.90312 10000 $1.90312	Buy Now

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E60000 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
E600001 010S1	Belden	Cable Assemblies - Modular Cables - CORDSET IP67 C6 UTP SO 1M BK	Original	PDF
E600002 010S1	Belden	Cable Assemblies - Modular Cables - CORDSET IP67 C6 UTP SO 2M BK	Original	PDF
E600005 010S1	Belden	Cable Assemblies - Modular Cables - CORDSET IP67 C6 UTP SO 5M BK	Original	PDF

E60000 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SA6954 Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00 Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to	Original	S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00	PDF
C000H-DFFFH Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation	Original	MX29LW128T/B/U/D 128M-BIT JAN/27/2003 MAR/28/2003 MAY/16/2003 MAY/29/2003 C000H-DFFFH 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh	PDF
JESD97 Abstract: M29DW128F TSOP56 6C80 Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read	Original	M29DW128F TSOP56 32-Word 16Mbit 48Mbit 16Mbit TBGA64 JESD97 M29DW128F TSOP56 6C80	PDF
SA452 Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this	Original	Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871	PDF
S29WS256N Abstract: S71WS512NE0BFWZZ Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip	Original	S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N	PDF
M29W128FL Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56 Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read	Original	M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) M29W128FL Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56	PDF
FL128P Abstract: SPANSION FL128P Text: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,	Original	S25FL128P 104-MHz S25FL128P FL128P SPANSION FL128P	PDF
samsung electronics ba41 Abstract: BA175 Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175	PDF
BA379 Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324 Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324	PDF
NS064N Abstract: S29NS128N S29NS256N VDC048 S29NS256 Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics Single 1.8 volt read, program and erase (1.70	Original	S29NSxxxN S29NS256N, S29NS128N, S29NS064N 16/8/4M 16-bit) 32-Word S29NS256/128/64N NS064N S29NS128N S29NS256N VDC048 S29NS256	PDF
JESD97 Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)	Original	M29DW128F TSOP56 32-Word TBGA64 16Mbit 48Mbit 16Mbit JESD97 M29DW128F TSOP56 esn 234 D2578 5PWA	PDF
IS29GL256 Abstract: No abstract text available Text: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns	Original	IS29GL256 32768K 16384K 16-bit) 8-word/16-byte 32-word/64-byte 128-word/256-byte 8-word/16byte IS29GL256 IS29GL256-JTLE	PDF
MX29GL256FLT2I-90Q Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544 Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC	Original	MX29GL256F PM1544 MX29GL256F 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word 100mA MX29GL256FLT2I-90Q MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544	PDF
S25FL129 Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024 Text: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,	Original	S25FL129P 128-Mbit 104-MHz S25FL129P S25FL129 s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024	PDF

120R Abstract: C8800 Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	Am29LV2562M 120R C8800	PDF
DQ141 Abstract: No abstract text available Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)	Original	M29DW128F 32-Word 16Mbit 48Mbit 16Mbit DQ141	PDF
l256mh113 Abstract: L256ML123R Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	Am29LV256M l256mh113 L256ML123R	PDF
06SEC Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash	PDF
Untitled Abstract: No abstract text available Text: Am29LV128MH/L Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	Am29LV128MH/L	PDF
Untitled Abstract: No abstract text available Text: S25FL128R 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet (Advance Information) S25FL128R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,	Original	S25FL128R 104-MHz S25FL128R	PDF
L256MH113R Abstract: L256ML113R Text: Am29LV256M Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG	Original	Am29LV256M L256MH113R L256ML113R	PDF
SA248 Abstract: s25fl129p00 s25fl129p0 Text: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,	Original	S25FL129P 128-Mbit 104-MHz S25FL129P SA248 s25fl129p00 s25fl129p0	PDF
Untitled Abstract: No abstract text available Text: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory Data Sheet (Advance Information) Distinctive Characteristics Single 1.8V read, program and erase (1.70V to 1.95V)	Original	S29NS-N S29NS256N, S29NS128N, S29NS064N 16/8/4M 16-bit)	PDF
Untitled Abstract: No abstract text available Text: S29NS-P MirrorBit Flash Family S29NS512P, S29NS256P, S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion	Original	S29NS-P S29NS512P, S29NS256P, S29NS128P	PDF

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E60000 Search Results

E60000 Price and Stock

Citizen Finedevice Co Ltd CSX-252FAE6000000T

Abracon Corporation ASE-60.000MHZ-L-C-T

SiTime Corporation SIT8008AI-13-18E-6.000000

SiTime Corporation SIT1602BI-12-XXE-60.000000

Seiko Epson Corporation SG-636PCE-6.0000MC0

E60000 Datasheets (3)

E60000 Datasheets Context Search

SA6954

C000H-DFFFH

JESD97

SA452

S29WS256N

M29W128FL

FL128P

samsung electronics ba41

BA379

NS064N

JESD97

IS29GL256

MX29GL256FLT2I-90Q

S25FL129

120R

DQ141

l256mh113

06SEC

Untitled

Untitled

L256MH113R

SA248

Untitled

Untitled