Untitled
Abstract: No abstract text available
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
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K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
08MAX
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Untitled
Abstract: No abstract text available
Text: LF3324 24Mbit Frame Buffer / FIFO DEVICES INCORPORATED Preliminary Datasheet Features 24,883,200-bit Frame Memory 74.25 Mhz Max Data Rate 54MHz in full-time Random Access Mode May be Organized Into the Following Configurations: • 3,110,400 x 8-bit • 2,488,320 x 10-bit
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LF3324
24Mbit
200-bit
54MHz
10-bit
12-bit
24bit
LF3324s
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Untitled
Abstract: No abstract text available
Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58CR064C,
M58CR064D
M58CR064P,
M58CR064Q
54MHz
120ns
TFBGA56
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JESD97
Abstract: M29DW128F TSOP56 6C80
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
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M29DW128F
TSOP56
32-Word
16Mbit
48Mbit
16Mbit
TBGA64
JESD97
M29DW128F
TSOP56
6C80
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TSOP-20 FOOTPRINT
Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J
Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29PL-J
16-Bit)
S29PL-J
TSOP-20 FOOTPRINT
tray datasheet bga 8x9
JESD 95-1, SPP-010
PL032J
AM29PDL
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K8P2815UQB
Abstract: No abstract text available
Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8P2815UQB
128Mb
20000h-027FFFh
018000h-01FFFFh
010000h-017FFFh
008000h-00FFFFh
007000h-007FFFh
006000h-006FFFh
005000h-005FFFh
004000h-004FFFh
K8P2815UQB
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JESD97
Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)
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M29DW128F
TSOP56
32-Word
TBGA64
16Mbit
48Mbit
16Mbit
JESD97
M29DW128F
TSOP56
esn 234
D2578
5PWA
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10001XXXXX
Abstract: No abstract text available
Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2M x 16-Bit CMOS 3.0 Volt-Only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29PL-J
16-Bit)
S29PL-J
10001XXXXX
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MS82V48540
Abstract: No abstract text available
Text: PEDS82V48540-01 1Semiconductor MS82V48540 This version: Jul. 2001 Preliminary 393,216-Word x 32-Bit × 4-Bank FIFO-SGRAM GENERAL DESCRIPTION The MS82V48540 is a 48-Mbit system clock synchronous dynamic random access memory. In addition to the conventional random read/write access function, the MS82V48540 provides the automatic row address increment
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PEDS82V48540-01
MS82V48540
216-Word
32-Bit
MS82V48540
48-Mbit
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Untitled
Abstract: No abstract text available
Text: LF3324 24Mbit Frame Buffer / FIFO DEVICES INCORPORATED Preliminary Datasheet Features 24,883,200-bit Frame Memory 74.25 Mhz Data Rate May be Organized Into the Following Configurations: • 3,110,400 x 8-bit • 2,488,320 x 10-bit • 2,073,600 x 12-bit Operating Modes:
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LF3324
24Mbit
200-bit
10-bit
12-bit
24bit
LF3324s
LF3324
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DQ141
Abstract: No abstract text available
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)
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M29DW128F
32-Word
16Mbit
48Mbit
16Mbit
DQ141
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manual for logo 230RC 6ED1-052-1FB00-0BA6
Abstract: siemens Logo 230RC user manual how to program siemens Logo 230RC manual LOGO TD text display siemens Logo 230RC manual instruction 6ED1055-1MD00-0BA1 Wiring Diagram SIEMENS logo 230RC siemens Logo 230RC service manual siemens Logo 230RC manual 6ED1052-1HB00-0BA6
Text: LOGO! _ Preface 1 _ Getting started with LOGO! LOGO! installation and 2 _ wiring 3 _ Programming LOGO! LOGO! 4 _ LOGO! functions UDF User-Defined 5 _
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6ED1050-1AA00-0BE8
A5E03556174-01
manual for logo 230RC 6ED1-052-1FB00-0BA6
siemens Logo 230RC user manual
how to program siemens Logo 230RC manual
LOGO TD text display
siemens Logo 230RC manual instruction
6ED1055-1MD00-0BA1
Wiring Diagram SIEMENS logo 230RC
siemens Logo 230RC service manual
siemens Logo 230RC manual
6ED1052-1HB00-0BA6
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TSOP-20 FOOTPRINT
Abstract: SA1115 pl032j
Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0-Volt only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described
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S29PL-J
16-Bit)
S29PL-J
TSOP-20 FOOTPRINT
SA1115
pl032j
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BA254
Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT
Text: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features
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TC58FVM7
128-MBIT
TC58FVM7T2A/B2A
134217728-bit,
BA254
ba148
TC58
TC58FVM7B2A
TC58FVM7T2A
TC58FVM7T2AFT65
TSOP56-P-1420-0
BA224
458000h
TC58FVM7T2AFT
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PL129J
Abstract: AMD marking CODE flash AM29DL PL032J70BAI12 SA1115 Spansion s29pl127j AM29PDL PL032J TSOP-20 FOOTPRINT Pl064j
Text: S29PL127J/S29PL129J/S29PL064J/S29PL032J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control Data Sheet PRELIMINARY Notice to Readers: This document indicates states the current technical
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S29PL127J/S29PL129J/S29PL064J/S29PL032J
16-Bit)
31107A62
PL129J
AMD marking CODE flash AM29DL
PL032J70BAI12
SA1115
Spansion s29pl127j
AM29PDL
PL032J
TSOP-20 FOOTPRINT
Pl064j
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Untitled
Abstract: No abstract text available
Text: CYF0018V CYF0036V CYF0072V 18/36/72-Mbit Programmable FIFOs 18/36/72-Mbit Programmable FIFOs Features Functional Description • Memory organization ❐ Industry’s largest first in first out FIFO memory densities: 18-Mbit, 36-Mbit, and 72-Mbit ❐ Selectable memory organization: x 9, × 12, × 16, × 18, × 20,
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CYF0018V
CYF0036V
CYF0072V
18/36/72-Mbit
18-Mbit,
36-Mbit,
72-Mbit
133-MHz
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Untitled
Abstract: No abstract text available
Text: VM305 Y I£ J S £ ;. WRITE/SERVO PHASE-LOCKED OSCILLATOR July, 1991 F EA TU R ES • • • • • • C om patible with Both 2,7 and (1,7) RLL Codes Operates at D ata Rates from 10 to 48Mbit/s Pin-selectable Input-to-Output Frequency Ratio 24-lead SOIC Package
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VM305
48Mbit/s
24-lead
VM305
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Untitled
Abstract: No abstract text available
Text: MAR 1 6 Ufj January 1993 PRELIMINARY ^ÉL M icro Linear ML6017 48 Mbps Read Channel Filter/Equalizer GENERAL D ESCRIPTIO N FEATURES The ML6017 is a monolithic analog filter/equalizer intended for hard disk drive read channel applications, capable of handling disk data rates upto 48Mbits/s, with
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ML6017
ML6017
48Mbits/s,
450mW.
J75QO
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Untitled
Abstract: No abstract text available
Text: VM 305 ^ VTC IIncorporated n r r WRITE/SERVO PHASE-LOCKED OSCILLATOR & PRELIMINARY FEATURES • • • • • • • • • April, 1990 CONNECTION DIAGRAM Compatible With Both 2,7 and (1,7) RLL Codes Operates at Data Rates from 10 to 48Mbit/s Pin-selectable Input-to-Output Frequency Ratio
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48Mbit/s
24-pin
VM305
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Untitled
Abstract: No abstract text available
Text: ^ . VTC Incorporated VM5621/VM5622 2,7 ENCODER/DECODER V FEATURES • Encodes and Decodes IBM (2,7) Code • 48Mbit/sec Maximum Code Rate • Soft-Sector 2T Frequency Address Mark Generation • Preamble lock time: 64-T (T = one period of 2F clock) • 4T (1000.) Preamble Frequency Detection
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VM5621/VM5622
48Mbit/sec
VM5622:
VM5621:
VM5621
VM5317
VM5351/5352
430mW
VM5622
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Untitled
Abstract: No abstract text available
Text: August 1994 ^ÉL M icro Linear ML6017 48 Mbps Read Channel Filter/Equalizer G EN ERAL D ESCRIPTIO N FEATURES The ML601 7 is a monolithic analog filter/equalizer intended for hard disk drive read channel applications, capable of handling disk data rates upto 48Mbits/s, with
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ML6017
ML601
48Mbits/s,
450mW.
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736MHZ
Abstract: No abstract text available
Text: August 1994 % M i c r o Linear ML6017 48 Mbps Read Channel Filter/Equalizer GENERAL DESCRIPTION FEATURES The ML601 7 is a monolithic analog filter/equalizer intended for hard disk drive read channel applications, capable of handling disk data rates upto 48Mbits/s, with
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ML601
48Mbits/s,
450mW.
736MHZ
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Untitled
Abstract: No abstract text available
Text: July 1992 A D V A N C ED IN FRO M A TIO N Micro Linear ML6007 48 Mbps Read Channel Filter/Equalizer GENERAL DESCRIPTION FEATURES The M L6007 is a monolithic analog filter/equalizer intended for hard disk drive read channel applications, capable of handling disk data rates upto 48Mbits/s, with
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ML6007
48Mbits/s,
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Untitled
Abstract: No abstract text available
Text: V T C Inc. V a lu e th e C u s to m e r VM5621/VM5622 2,7 ENCODER-DECODER July, 1992 A B S O L U T E M A X IM U M R A T IN G S VM5621 Power Supply Voltages (VEE - 0V) . .OVto 7V Storage Temperature Range
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VM5621/VM5622
VM5621
515mW
28-Lead
ifl13
VM5622
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