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    E153 Price and Stock

    KOA Speer Electronics Inc RK73B3ATTE153J

    RES 15K OHM 5% 1W 2512
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    TDK Corporation C3216C0G2E153K160AA

    CAP CER 0.015UF 250V C0G 1206
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    TDK Corporation CGA5L3C0G2E153J160AA

    CAP CER 0.015UF 250V C0G 1206
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    TE Connectivity SBCHE153R3K

    RES 3.3 OHM 10% 17W AXIAL
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    TDK Corporation CGA5H3X7R2E153K115AA

    CAP CER 0.015UF 250V X7R 1206
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    E153 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    E-153 Semitec Current regulative diode Original PDF
    E-153 International Semiconductor DIODE CURRENT REG. 25V 18MA 2DO-35 Scan PDF
    E-153 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    E15-30 Fran Mar International Input voltage 36-72 VDCoutput voltage 3.3 VDCoutput current:150/3000 mAinput current 15 mA/271 mA 15 W wide input DC to DC converter Scan PDF
    E15-31 Fran Mar International Input voltage 36-72 VDCoutput voltage 5 VDCoutput current:150/3000 mAinput current 15 mA/391 mA 15 W wide input DC to DC converter Scan PDF
    E15-32 Fran Mar International Input voltage 36-72 VDCoutput voltage 12 VDCoutput current:65/1250 mAinput current 15 mA/377 mA 15 W wide input DC to DC converter Scan PDF
    E1532S.38.03 General Cable Multiple Conductor Cables, Cables, Wires, 2C/12 SBC UNSH TYPE FPLR Original PDF
    E1532S.41.03 General Cable Multiple Conductor Cables, Cables, Wires, CABLE 2COND 12AWG UNSHIELD 1000' Original PDF
    E1532S.44.03 General Cable Multiple Conductor Cables, Cables, Wires, 2C/12 SBC UNSH TYPE FPLR Original PDF
    E1532S.46.03 General Cable Multiple Conductor Cables, Cables, Wires, 2C/12 SBC UNSH TYPE FPLR Original PDF
    E15-33 Fran Mar International Input voltage 36-72 VDCoutput voltage 15 VDCoutput current:50/1000 mAinput current 15 mA/377 mA 15 W wide input DC to DC converter Scan PDF
    E15-34 Fran Mar International Input voltage 36-72 VDCoutput voltage ±5 VDCoutput current:±75/±1500 mAinput current 20 mA/381 mA 15 W wide input DC to DC converter Scan PDF
    E1534S.38.03 General Cable Multiple Conductor Cables, Cables, Wires, 4C/12 SBC UNSH TYPE FPLR Original PDF
    E1534S.41.03 General Cable Multiple Conductor Cables, Cables, Wires, 4C/12 SBC UNSH TYPE FPLR Original PDF
    E15-35 Fran Mar International Input voltage 36-72 VDCoutput voltage ±12 VDCoutput current:±35/±625 mAinput current 20 mA/377 mA 15 W wide input DC to DC converter Scan PDF
    E15-36 Fran Mar International Input voltage 36-72 VDCoutput voltage ±15 VDCoutput current:±25/±500 mAinput current 20 mA/377 mA 15 W wide input DC to DC converter Scan PDF
    E153C Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    E153D Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    E153 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    35N120D1

    Abstract: D-68623 IXER 35N120D1
    Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C


    Original     		35N120D1 247TM E153432 35N120D1 D-68623 IXER 35N120D1 PDF

    TO247AD

    Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
    Text: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions


    Original     		40N60C ISOPLUS247TM 247TM E153432 TO247AD TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247 PDF

    DSEC29

    Abstract: DSEC 29 DSEC
    Text: HiPerFREDTM Epitaxial Diode DSEA 59-06BC DSEC 59-06BC = 2x30 A = 600 V = 35 ns IFAV VRRM trr ISOPLUS220TM Electrically Isolated Back Surface DSEA Preliminary Data Sheet VRSM VRRM V V 600 600 ISOPLUS220TM E153432 Type 1 DSEC 2 3 2 3 DSEA 59-06BC DSEC 59-06BC


    Original     		59-06BC ISOPLUS220TM E153432 29-06B DS98817A DSEC29 DSEC 29 DSEC PDF

    IXGN400N60B3

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXGN400N60B3 GenX3TM 600V IGBT VCES = 600V IC25 = 430A VCE sat ≤ 1.40V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original     		IXGN400N60B3 OT-227B, E153432 IC110 400N60B3 IXGN400N60B3 PDF

    Mosfet 75V 120A

    Abstract: Power Mosfet 75V 120A IXFN240N15T2
    Text: Advance Technical Information IXFN240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions


    Original     		IXFN240N15T2 140ns OT-227 E153432 240N15T2 Mosfet 75V 120A Power Mosfet 75V 120A IXFN240N15T2 PDF

    IXFN520N075T2

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 75V 480A Ω 1.9mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C


    Original     		IXFN520N075T2 OT-227 E153432 520N075T2 IXFN520N075T2 PDF

    IXGN320N60A3

    Abstract: No abstract text available
    Text: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGN320N60A3 OT-227B, E153432 IC110 320N60A3 3-08-A IXGN320N60A3 PDF

    IXFN320N17T2

    Abstract: ixfn320n 320N17T2
    Text: Advance Technical Information IXFN320N17T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 170V 260A Ω 5.2mΩ 150ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions


    Original     		IXFN320N17T2 150ns OT-227 E153432 320N17T2 IXFN320N17T2 ixfn320n PDF

    ixfn420n10t

    Abstract: 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16
    Text: Advance Technical Information IXFN420N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 420A Ω 2.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions


    Original     		IXFN420N10T 140ns OT-227 E153432 420N10T ixfn420n10t 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16 PDF

    IXGN200N60B3

    Abstract: 9V DC INPUT and gate ic 200N60B3 IGBT 100V 100A igbt 100a 150v SOT227B 123B16
    Text: IXGN200N60B3 GenX3TM 600V IGBT VCES = 600V IC110 = 200A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGN200N60B3 IC110 5-40kHz OT-227B, E153432 200N60B3 8-08-A IXGN200N60B3 9V DC INPUT and gate ic IGBT 100V 100A igbt 100a 150v SOT227B 123B16 PDF

    IXGJ50N60C4D1

    Abstract: G50N60
    Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGJ50N60C4D1 VCES = 600V IC110 = 21A VCE sat ≤ 2.50V (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		IXGJ50N60C4D1 IC110 O-247TM E153432 IC110 IF110 50N60C4 0-06-11-A IXGJ50N60C4D1 G50N60 PDF

    IXTN17N120L

    Abstract: No abstract text available
    Text: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTN17N120L VDSS ID25 D N-Channel Enhancement Mode Avalanche Rated = 1200V = 17A Ω ≤ 990mΩ RDS on G S S miniBLOC, SOT-227 B (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		IXTN17N120L OT-227 E153432 17N120L IXTN17N120L PDF

    E1531A

    Abstract: No abstract text available
    Text: PDFINFO H2 4 0 1 - 0 1 8-Channel Voltage Output SCP HP E1531A Technical Specifications ● ● ● ● Use with HP E1415A and HP E1419A 8-channel non-isolated voltage source Current limited to protect from short circuits Source ± 16 V at up to 5 mA output current


    Original     		E1531A E1415A E1419A E1531A E1415A 5966-2401E PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 VCES = 600V IC110 = 120A VCE sat ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching D1 E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		IXGN120N60A3 IXGN120N60A3D1 IC110 OT-227B, E153432 IF110 2x61-06A PDF

    55N120D1

    Abstract: No abstract text available
    Text: IXDN 55N120 VCES = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE sat typ = 2.3 V High Voltage IGBT with optional Diode C C Short Circuit SOA Capability Square RBSOA G E G E E IXDN 55N120 Preliminary Data E IXDN 55N120 D1 miniBLOC, SOT-227 B E153432 E Symbol Conditions


    Original     		55N120 55N120 OT-227 E153432 IXDN55N120 D-68623 55N120D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXN110N65B4H1 10-30kHz IC110 OT-227B, E153432 IF110 110N65B4H1 02-04-13-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXFN520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 75V 455A Ω 1.65mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C


    Original     		IXFN520N075T2 OT-227 E153432 520N075T2 PDF

    E1406A

    Abstract: data acquisition and control system 82341C DAC1000 82341D E1421B E2120E pentium 66
    Text: PDFINFO H8 6 4 1 - 0 1 HP DAC1000 Data Acquisition and Control System Technical Specifications ● ● ● ● ● ● Test system which combines VXI instrument modules HP E1419A Multifunctionplus with 32-channel analog input HP E1421B 6-slot mainframe HP E1531A 8-channel analog output


    Original     		DAC1000 E1419A 32-channel E1421B E1531A E1533A 16-channel E1406A data acquisition and control system 82341C 82341D E2120E pentium 66 PDF

    Untitled

    Abstract: No abstract text available
    Text: PDFINFO H2 4 0 7 - 0 1 8-Bit Isolated Digital I/O SCP HP E1536A Technical Specifications ● ● ● ● Use with HP E1415A and HP E1419A 8 TTL input/output lines isolated to 56 Vdc Programmable threshold levels of 5 V, 12 V, 24 V, or 48 V Programmable debounce timer


    Original     		E1536A E1415A E1419A E1536A 5966-2407E PDF

    80N60

    Abstract: No abstract text available
    Text: Advance Technical Information IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFR80N60P3 250ns ISOPLUS247 E153432 80N60P3 80N60 PDF

    IXFN44N80Q3

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN44N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = = ≤ ≤ 800V 37A Ω 190mΩ 300ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings


    Original     		IXFN44N80Q3 300ns E153432 44N80Q3 IXFN44N80Q3 PDF

    IXXN100N60B3H1

    Abstract: No abstract text available
    Text: Advance Technical Information IXXN100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C


    Original     		10-30kHz IXXN100N60B3H1 150ns IF110 100N60B3 12-01-11-B IXXN100N60B3H1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings


    Original     		IXTJ6N150 O-247TM E153432 100ms 6N150 PDF

    IXFN62N80Q3

    Abstract: sot 123
    Text: Advance Technical Information IXFN62N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 800V 49A Ω 140mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFN62N80Q3 300ns E153432 62N80Q3 IXFN62N80Q3 sot 123 PDF