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    IXYS Corporation IXXN100N60B3H1

    IGBTs XPT 600V IGBT GenX3 w/Diode
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    Mouser Electronics IXXN100N60B3H1 10
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    Future Electronics IXXN100N60B3H1 Tube 25 Weeks 10
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    Quest Components IXXN100N60B3H1 9
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    TTI IXXN100N60B3H1 Tube 300
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    TME IXXN100N60B3H1 1
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    Littelfuse Inc IXXN100N60B3H1

    Disc Igbt Xpt-Genx3 Sot-227Ui(Mini/ Tube |Littelfuse IXXN100N60B3H1
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    Newark IXXN100N60B3H1 Bulk 300
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    IXXN100N60B3H1 Datasheets Context Search

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    IXXN100N60B3H1

    Abstract: No abstract text available
    Text: Advance Technical Information IXXN100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C


    Original     		PDF 10-30kHz IXXN100N60B3H1 150ns IF110 100N60B3 12-01-11-B IXXN100N60B3H1

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXXN100N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF IXXN100N60B3H1 10-30kHz 150ns OT-227B, E153432 IF110 100N60B3 12-01-11-B

    Untitled

    Abstract: No abstract text available
    Text: IXXN100N60B3H1 XPTTM 600V IGBT GenX3TM w/ Diode Extreme Light Punch Through IGBT for 10-30kHz Switching VCES IC90 VCE sat tfi(typ) SOT-227B, miniBLOC E153432 Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600


    Original     		PDF IXXN100N60B3H1 10-30kHz 150ns OT-227B, E153432 IF110 100N60B3 12-01-11-B