Untitled
Abstract: No abstract text available
Text: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
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Original
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PDF
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CHA2190
20-30GHz
20-30GHz
20dBm
dBS11
dBS21
dBS22
DSCHA21902036
-05-Feb
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CHA2190
Abstract: PS11 PS12 PS22 DBS11
Text: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
|
Original
|
PDF
|
CHA2190
20-30GHz
20-30GHz
20dBm
dBS11
dBS21
dBS22
DSCHA21902036
-05-Feb
CHA2190
PS11
PS12
PS22
DBS11
|
CHA2190-99F/00
Abstract: CHA2190 PS11 PS12 PS22 self 16071
Text: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes
|
Original
|
PDF
|
CHA2190
20-30GHz
20-30GHz
20dBm
dBS11
dBS21
dBS22
DSCHA21902036
-05-Feb
CHA2190-99F/00
CHA2190
PS11
PS12
PS22
self 16071
|
internal circuit of ic 7486
Abstract: CHA2190-99F/00 hemt biasing CHA2190 PS11 PS12 PS22
Text: CHA2190 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via
|
Original
|
PDF
|
CHA2190
20-30GHz
20-30GHz
20dBm
dBS11
dBS21
dBS22
DSCHA21902036
-05-Feb
internal circuit of ic 7486
CHA2190-99F/00
hemt biasing
CHA2190
PS11
PS12
PS22
|