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    CHA2190 Search Results

    CHA2190 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CHA2190 United Monolithic Semiconductors 20-30GHz Low Noise Amplifier Original PDF
    CHA2190-99F/00 United Monolithic Semiconductors 20-30GHz low noise amplifier Original PDF

    CHA2190 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original
    CHA2190 20-30GHz 20-30GHz 20dBm dBS11 dBS21 dBS22 DSCHA21902036 -05-Feb PDF

    CHA2190

    Abstract: PS11 PS12 PS22 DBS11
    Text: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original
    CHA2190 20-30GHz 20-30GHz 20dBm dBS11 dBS21 dBS22 DSCHA21902036 -05-Feb CHA2190 PS11 PS12 PS22 DBS11 PDF

    CHA2190-99F/00

    Abstract: CHA2190 PS11 PS12 PS22 self 16071
    Text: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes


    Original
    CHA2190 20-30GHz 20-30GHz 20dBm dBS11 dBS21 dBS22 DSCHA21902036 -05-Feb CHA2190-99F/00 CHA2190 PS11 PS12 PS22 self 16071 PDF

    internal circuit of ic 7486

    Abstract: CHA2190-99F/00 hemt biasing CHA2190 PS11 PS12 PS22
    Text: CHA2190 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via


    Original
    CHA2190 20-30GHz 20-30GHz 20dBm dBS11 dBS21 dBS22 DSCHA21902036 -05-Feb internal circuit of ic 7486 CHA2190-99F/00 hemt biasing CHA2190 PS11 PS12 PS22 PDF

    CHA2066-99S

    Abstract: No abstract text available
    Text: UMS UNIQUE SPACE SOLUTION A complete selection of catalogue Class S products For many years, UMS has served the needs of the international space community by offering an extensive selection of space evaluated processes: • Low Noise PHEMT PH25, PH15 • Power MESFET (HP07)


    Original
    PPH25X, PPH15, HB20S, HB20P) HB20M) MIL-PRF-38534. CND2047 CHS5100 CHP6013 CHX2089 CHA2066-99S PDF

    PPH25X

    Abstract: No abstract text available
    Text: Contents Products . 3 Foundry open processes. 12 GaN current packaging solutions and demo boards. 14


    Original
    PDF