CHA2066
Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
Text: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges
|
Original
|
PDF
|
CHA2066
10-16GHz
CHA2066
10-16GHz
20dBm
DSCHA20660118
-27-Apr-00
MS11
MS12
MS21
MS22
PS11
PS12
PS22
|
CHA2066
Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22 993 99f
Text: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges
|
Original
|
PDF
|
CHA2066
10-16GHz
CHA2066
10-16GHz
20dBm
DSCHA20661257
-14-Sept-01
MS11
MS12
MS21
MS22
PS11
PS12
PS22
993 99f
|
ps2 CIRCUIT diagram
Abstract: TCA 965 BP CMT58 CMT57 Hitachi DSA002730 k 1413
Text: Hitachi 16-Bit Single-Chip Microcomputer H8S/2194 Series, H8S/2194C Series, H8S/2194 F-ZTAT , H8S/2194C F-ZTAT™ H8S/2194, HD6432194, HD64F2194, H8S/2193, HD6432193 H8S/2192, HD6432192 H8S/2191, HD6432191 H8S/2194C, HD6432194C, HD64F2194C, H8S/2194B, HD6432194B
|
Original
|
PDF
|
16-Bit
H8S/2194
H8S/2194C
H8S/2194,
HD6432194,
HD64F2194,
H8S/2193,
HD6432193
ps2 CIRCUIT diagram
TCA 965 BP
CMT58
CMT57
Hitachi DSA002730
k 1413
|
ps2 CIRCUIT diagram
Abstract: hd102 167 1 CMT54 HD12D TCA 785 IC ta222 TA023 CMT57 Hitachi DSA002714 HD100
Text: Hitachi Single-Chip Microcomputer H8S/2194 Series, H8S/2194F-ZTAT H8S/2194, HD6432194, HD64F2194, H8S/2193, HD6432193 H8S/2192, HD6432192 H8S/2191, HD6432191 Hardware Manual ADE-602-160 Ver 0.1 11/20/98 Hitachi, Ltd. Notice When using this document, keep the following in mind:
|
Original
|
PDF
|
H8S/2194
H8S/2194F-ZTATTM
H8S/2194,
HD6432194,
HD64F2194,
H8S/2193,
HD6432193
H8S/2192,
HD6432192
H8S/2191,
ps2 CIRCUIT diagram
hd102 167 1
CMT54
HD12D
TCA 785 IC
ta222
TA023
CMT57
Hitachi DSA002714
HD100
|
fop 630
Abstract: CHA3664 CHA3664-QAG smd 1513 sas 560
Text: CHA3664-QAG RoHS COMPLIANT 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier. The circuit is manufactured with a power pHEMT process: 0.25µm gate length, via holes
|
Original
|
PDF
|
CHA3664-QAG
5-21GHz
CHA3664-QAG
5-21GHz
16L-QFN3x3
120mA
DSCHA3664-QAG7333
fop 630
CHA3664
smd 1513
sas 560
|
AN0020
Abstract: CHA5014 9v23
Text: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to
|
Original
|
PDF
|
CHA5014
CHA5014
30dBm
DSCHA50140112
AN0020
9v23
|
CHA6517
Abstract: fop 630
Text: CHA6517 RoHS COMPLIANT 6-18GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process,
|
Original
|
PDF
|
CHA6517
6-18GHz
CHA6517
18GHz
DSCHA65179250
fop 630
|
AN0017
Abstract: CHA3693-QDG qfn 76 PACKAGE footprint
Text: CHA3693-QDG RoHS COMPLIANT 20-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description CHA3693-QDG on a Board The CHA3693-QDG is a high gain broadband four stage monolithic medium power amplifier. It is designed for a wide range of applications from
|
Original
|
PDF
|
CHA3693-QDG
20-30GHz
CHA3693-QDG
20-30GHz
20dBm
330mA
28dBm
24L-QFN4x4
DSCHA3693-QDG7268
AN0017
qfn 76 PACKAGE footprint
|
CHA2069-99F/00
Abstract: CHA2069
Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
|
Original
|
PDF
|
CHA2069
18-31GHz
18-31GHz
20dBm
DSCHA20679273
8-Sep-99
CHA2069-99F/00
CHA2069
|
MAR105
Abstract: CHA2066 MS11 MS12 MS21 MS22 PS11 PS12 PS22 RF 3826
Text: CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
|
Original
|
PDF
|
CHA2066
10-16GHz
CHA2066
10-16GHz
20dBm
DSCHA20660069
MAR105
MS11
MS12
MS21
MS22
PS11
PS12
PS22
RF 3826
|
x-Band High Power Amplifier
Abstract: 8205 MMIC X-band amplifier X-band GaAs pHEMT MMIC Chip x-band mmic 8205 A 8205 datasheet CHA6517 chip 8205 8205 6 pin
Text: CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including,
|
Original
|
PDF
|
CHA6517
CHA6517
32dBm
DSCHA6517-8205
x-Band High Power Amplifier
8205
MMIC X-band amplifier
X-band GaAs pHEMT MMIC Chip
x-band mmic
8205 A
8205 datasheet
chip 8205
8205 6 pin
|
nf46
Abstract: CHA3666 CHA3666-SNF
Text: CHA3666-SNF 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in hermetic package Description The CHA3666-SNF is a two-stage selfbiased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via
|
Original
|
PDF
|
CHA3666-SNF
8-16GHz
CHA3666-SNF
8-16GHz
24dBm
16dBm
12L-Glass/metal
DSCHA3666-SNF7208
nf46
CHA3666
|
CHT4690-99F
Abstract: CHT4690 DSCHT46905334
Text: CHT4690 RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4690 is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds.
|
Original
|
PDF
|
CHT4690
5-30GHz
CHT4690
5-30GHz
25dBm
DSCHT46905334
CHT4690-99F
|
REJ09B0328-0300
Abstract: ps3 CIRCUIT diagram ps2 CIRCUIT diagram TIL Display til 815 display ZE 004 28135 Nippon capacitors NEGATIVE Composite Sync HD14C
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
H8S/2194
H8S/2194C
H8S/2194F-ZTATTM,
REJ09B0328-0300
REJ09B0328-0300
ps3 CIRCUIT diagram
ps2 CIRCUIT diagram
TIL Display
til 815 display
ZE 004 28135
Nippon capacitors
NEGATIVE Composite Sync
HD14C
|
|
|
HD12E
Abstract: pal 007B BF 331 TRANSISTORS marking 269-3 affb D106 SCR D22A marking code fds 690 das p71 0107 TDR25
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
PDF
|
FP-112
FP-112)
H8S/2199
H8S/2199F-ZTATTM
HD12E
pal 007B
BF 331 TRANSISTORS
marking 269-3
affb
D106 SCR
D22A marking code
fds 690 das
p71 0107
TDR25
|
x-Band High Power Amplifier
Abstract: chip 8205 8205 8205 datasheet CHA6517 x-band power amplifier S 8205 fop 630
Text: CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including,
|
Original
|
PDF
|
CHA6517
CHA6517
32dBm
DSCHA6517-8205
x-Band High Power Amplifier
chip 8205
8205
8205 datasheet
x-band power amplifier
S 8205
fop 630
|
CHA2066
Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
Text: CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via
|
Original
|
PDF
|
CHA2066
10-16GHz
CHA2066
10-16GHz
20dBm
DSCHA20664281
MS11
MS12
MS21
MS22
PS11
PS12
PS22
|
CHA3801-99F
Abstract: IC 7448 ACTIVE HIGH ic 7808
Text: CHA3801-99F RoHS COMPLIANT L-Band Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3801-99F is an L-Band LNA monolithic circuit including an active bias network. Furthermore a protection network is included in order to allow high input power
|
Original
|
PDF
|
CHA3801-99F
CHA3801-99F
75GHz
17dBm
27dBm
DSCHA38010314
IC 7448 ACTIVE HIGH
ic 7808
|
CHA5012
Abstract: No abstract text available
Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride
|
Original
|
PDF
|
CHA5012
CHA5012
DSCHA50120179
|
CHT4690
Abstract: CHT4690-99F 99-F
Text: CHT4690-99F RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4690 is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps
|
Original
|
PDF
|
CHT4690-99F
5-30GHz
CHT4690
5-30GHz
25dBm
DSCHT46900211
CHT4690-99F
99-F
|
10ghz variable attenuator
Abstract: Fixed Attenuators Surface Mount 30dB AN0017 CHT4690-QAG RO4003 10ghz attenuator
Text: CHT4690-QAG RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC in SMD leadless package Description The CHT4690-QAG is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a
|
Original
|
PDF
|
CHT4690-QAG
5-30GHz
CHT4690-QAG
5-30GHz
25dBm
16Leads
CHT4690QAG0211
10ghz variable attenuator
Fixed Attenuators Surface Mount 30dB
AN0017
RO4003
10ghz attenuator
|
Untitled
Abstract: No abstract text available
Text: CHA6105 RoHS COMPLIANT 8-12GHz Driver Amplifier GaAs Monolithic Microwave IC Description VD1 The CHA6105 is a monolithic three-stage medium power amplifier designed for X-band applications. The driver provides typically 31.5dBm output power at saturation and is suitable
|
Original
|
PDF
|
CHA6105
8-12GHz
CHA6105
8-12GHz
700mA
100may
DSCHA61050106
|
Untitled
Abstract: No abstract text available
Text: CHA3665-QAG RoHS COMPLIANT 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3665-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial
|
Original
|
PDF
|
CHA3665-QAG
5-21GHz
CHA3665-QAG
A3665
5-21GHz
120mA
16L-QFN3x3
DSCHA3665-QAG2258
|
Untitled
Abstract: No abstract text available
Text: KST2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C i Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation VcBO -6 0 -40 -5 -6 0 0
|
OCR Scan
|
PDF
|
KST2907
DBS11Q
0Q25111
|
