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United Monolithic Semiconductors CHA2190-99F CHA2190-99F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	CHA2190-99F		10		2	1 - 10 $42.4 100 $42.4 1000 $42.4 10000 $42.4	Buy Now
Richardson RFPD	CHA2190-99F				1	1 $28.05 10 $28.05 100 $28.05 1000 $28.05 10000 $28.05	Buy Now

CHA2190 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
CHA2190		United Monolithic Semiconductors	20-30GHz Low Noise Amplifier		Original	PDF
CHA2190-99F/00		United Monolithic Semiconductors	20-30GHz low noise amplifier		Original	PDF

CHA2190 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via	Original	PDF	CHA2190 20-30GHz 20-30GHz 20dBm dBS11 dBS21 dBS22 DSCHA21902036 -05-Feb
CHA2190 Abstract: PS11 PS12 PS22 DBS11 Text: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via	Original	PDF	CHA2190 20-30GHz 20-30GHz 20dBm dBS11 dBS21 dBS22 DSCHA21902036 -05-Feb CHA2190 PS11 PS12 PS22 DBS11
CHA2190-99F/00 Abstract: CHA2190 PS11 PS12 PS22 self 16071 Text: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes	Original	PDF	CHA2190 20-30GHz 20-30GHz 20dBm dBS11 dBS21 dBS22 DSCHA21902036 -05-Feb CHA2190-99F/00 CHA2190 PS11 PS12 PS22 self 16071
internal circuit of ic 7486 Abstract: CHA2190-99F/00 hemt biasing CHA2190 PS11 PS12 PS22 Text: CHA2190 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via	Original	PDF	CHA2190 20-30GHz 20-30GHz 20dBm dBS11 dBS21 dBS22 DSCHA21902036 -05-Feb internal circuit of ic 7486 CHA2190-99F/00 hemt biasing CHA2190 PS11 PS12 PS22
CHA2066-99S Abstract: No abstract text available Text: UMS UNIQUE SPACE SOLUTION A complete selection of catalogue Class S products For many years, UMS has served the needs of the international space community by offering an extensive selection of space evaluated processes: • Low Noise PHEMT PH25, PH15 • Power MESFET (HP07)	Original	PDF	PPH25X, PPH15, HB20S, HB20P) HB20M) MIL-PRF-38534. CND2047 CHS5100 CHP6013 CHX2089 CHA2066-99S
PPH25X Abstract: No abstract text available Text: Contents Products . 3 Foundry open processes. 12 GaN current packaging solutions and demo boards. 14	Original	PDF