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Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V IXBH6N170 IXBT6N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700
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IXBH6N170
IXBT6N170
O-247
6N170
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DS99004
Abstract: 6N170 smd diode 819 to-268 6N17 TRANSISTOR 610 smd
Text: Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 6N170 IXBT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous
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6N170
O-247)
728B1
DS99004
6N170
smd diode 819
to-268
6N17
TRANSISTOR 610 smd
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IXBH6N170
Abstract: IXBT6N170
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700
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Original
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PDF
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IXBH6N170
IXBT6N170
O-247
O-268
6N170
IXBT6N170
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6N170
Abstract: IXBH6N170 IXBT6N170 9632ns
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700
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Original
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PDF
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IXBH6N170
IXBT6N170
O-247
6N170
IXBH6N170
IXBT6N170
9632ns
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