Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    6N17 Search Results

    SF Impression Pixel

    6N17 Price and Stock

    IXYS Corporation IXGH16N170

    IGBT NPT 1700V 32A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH16N170 Tube 2,847 1
    • 1 $11.47
    • 10 $11.47
    • 100 $9.15567
    • 1000 $7.22806
    • 10000 $6.50525
    Buy Now
    Mouser Electronics IXGH16N170 986
    • 1 $11.47
    • 10 $10.56
    • 100 $8.93
    • 1000 $7.23
    • 10000 $6.51
    Buy Now
    Newark IXGH16N170 Bulk 433 1
    • 1 $11.93
    • 10 $11.13
    • 100 $9.53
    • 1000 $8.52
    • 10000 $8.52
    Buy Now
    TTI IXGH16N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $8.27
    • 10000 $8.27
    Buy Now
    TME IXGH16N170 1
    • 1 $12.07
    • 10 $9.57
    • 100 $8.93
    • 1000 $8.93
    • 10000 $8.93
    Get Quote
    Chip-Germany GmbH IXGH16N170 72
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    South Electronics IXGH16N170
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    IXYS Corporation IXYH16N170C

    IGBT 1.7KV 40A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXYH16N170C Tube 1,221 1
    • 1 $9.07
    • 10 $9.07
    • 100 $7.24233
    • 1000 $5.71776
    • 10000 $4.82198
    Buy Now
    Mouser Electronics IXYH16N170C 303
    • 1 $9.07
    • 10 $8.36
    • 100 $7.14
    • 1000 $5.71
    • 10000 $4.83
    Buy Now
    TME IXYH16N170C 1
    • 1 $11.3
    • 10 $8.97
    • 100 $8.06
    • 1000 $8.06
    • 10000 $8.06
    Get Quote

    IXYS Corporation IXBH16N170

    IGBT 1700V 40A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBH16N170 Tube 375 1
    • 1 $13.26
    • 10 $13.26
    • 100 $10.735
    • 1000 $9.1562
    • 10000 $8.39844
    Buy Now
    Mouser Electronics IXBH16N170 896
    • 1 $13.26
    • 10 $12.39
    • 100 $10.73
    • 1000 $9.81
    • 10000 $9.81
    Buy Now
    TTI IXBH16N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $9.71
    • 10000 $9.71
    Buy Now
    TME IXBH16N170 1
    • 1 $14.62
    • 10 $11.52
    • 100 $10.97
    • 1000 $10.97
    • 10000 $10.97
    Get Quote
    New Advantage Corporation IXBH16N170 62 1
    • 1 -
    • 10 -
    • 100 $21.69
    • 1000 $21.69
    • 10000 $21.69
    Buy Now

    IXYS Corporation IXYH16N170CV1

    IGBT 1.7KV 40A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXYH16N170CV1 Tube 310 1
    • 1 $8.37
    • 10 $8.37
    • 100 $6.68567
    • 1000 $6.19517
    • 10000 $6.19517
    Buy Now
    TME IXYH16N170CV1 1
    • 1 $14.95
    • 10 $11.74
    • 100 $10.59
    • 1000 $10.59
    • 10000 $10.59
    Get Quote

    IXYS Corporation IXBH6N170

    IGBT 1700V 12A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBH6N170 Tube 300 1
    • 1 $11.95
    • 10 $11.95
    • 100 $9.536
    • 1000 $7.52849
    • 10000 $6.77564
    Buy Now
    Mouser Electronics IXBH6N170 188
    • 1 $11.95
    • 10 $11
    • 100 $9.4
    • 1000 $7.25
    • 10000 $6.77
    Buy Now
    TME IXBH6N170 1
    • 1 $8.66
    • 10 $7.25
    • 100 $7
    • 1000 $7
    • 10000 $7
    Get Quote
    New Advantage Corporation IXBH6N170 436 1
    • 1 -
    • 10 -
    • 100 $15.3
    • 1000 $14.28
    • 10000 $14.28
    Buy Now

    6N17 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    application notes IXGH 6N170

    Abstract: 6N170
    Text: Advance Technical Data High Voltage IGBT VCES IC25 VCE sat tfi(typ) IXGH 6N170 IXGT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original
    PDF 6N170 O-247 O-268 728B1 application notes IXGH 6N170 6N170

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data IXGQ 6N170AM High Voltage IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 6 A IC90 TC = 90°C ICM


    Original
    PDF 6N170AM 50/60Hz, 728B1

    IXGH 6N170

    Abstract: 6N170
    Text: IXGH 6N170 IXGT 6N170 High Voltage IGBT VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 12 A IC90


    Original
    PDF 6N170 6N170 O-268 O-247 IXGH 6N170

    IC1700

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 6N170A IXGT 6N170A VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original
    PDF 6N170A O-247 O-268 728B1 IC1700

    DS99004

    Abstract: 6N170 smd diode 819 to-268 6N17 TRANSISTOR 610 smd
    Text: Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 6N170 IXBT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


    Original
    PDF 6N170 O-247) 728B1 DS99004 6N170 smd diode 819 to-268 6N17 TRANSISTOR 610 smd

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 6N170 IXGT 6N170 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original
    PDF 6N170 6N170 O-268 O-247 i-247) 728B1

    Untitled

    Abstract: No abstract text available
    Text: IXGH 6N170 IXGT 6N170 High Voltage IGBT VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 12 A IC90


    Original
    PDF 6N170

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 6N170A IXGT 6N170A VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original
    PDF 6N170A O-247 O-268 728B1

    6N170A

    Abstract: No abstract text available
    Text: Advance Technical Data IXGH 6N170A IXGT 6N170A High Voltage IGBT VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original
    PDF 6N170A O-247 728B1 6N170A

    IXGH 6N170

    Abstract: 6N170 application notes IXGH 6N170 UPS SIEMENS
    Text: High Voltage IGBT IXGH 6N170 IXGT 6N170 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 12 A IC90


    Original
    PDF 6N170 solder12 IXGH 6N170 6N170 application notes IXGH 6N170 UPS SIEMENS

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 6N170A IXGT 6N170A VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original
    PDF 6N170A 6N170A O-268 O-247 O-247hermal 728B1

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    6N17B

    Abstract: 6H17B 6h17b tube 6H175 tube 6N17B 6N17
    Text: 6HI75 A b OHHOH TpHOA Double triode JXbohhoh TpHOA 6H17B npe,o;Ha3HaqeH juin ycnjieiiHH HanpH^eHHH hh3koh qacTOTbi. ZlBOHHbie TpHO^bi 6H17B BbinycKaiOTCH b C Bepx- The 6H17B double triode is designed for ampli­ fication of low-frequency voltage. The 6H17B double triodes are superminiature


    OCR Scan
    PDF 6H175 6H17B Harpy30K: 6N17B 6h17b tube tube 6N17B 6N17

    50N60

    Abstract: 50N100 50n80 40N160 9N160G 50N6
    Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C


    OCR Scan
    PDF 9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6

    6h2n

    Abstract: 6N3P 6N16B 6X6C 6N6P-i 6e5p tube 6N17B 6N5P 6n2p 6N1P
    Text: nPHEMHO-yCMilMTEnbHblE nAM nbi RECEIVING TUBES K huto 2 Book 2 B/O „MALLinPMEOPMHTOPr“ CCCP MOCKBA V/O “MASHPRIBORINTORG” USSR MOSCOW Ccc70 yd 13082.01 CnpaBo^HHK-KaTajior „npHeMHO-ycHjiHTejibHbie jiaMnbi“ n03B0jineT 03HaK0MHTbC5i c HOMeHKJiaTypOH H TeXHHqeCKHMH X â p a K T e pHCTHKâMH npHeMHOycHjiHTejibHbix jiaMn, KOTOpbie S K c n o p r a p y e T CoBeTCKHH Cok 3. CnpaBO^HHK-KaTajior npeziHasHa^eH


    OCR Scan
    PDF Ccc70 n03B0jineT 03HaK0MHTbC5i r-200, Bon2000 30Z6S 30U6C JIO-3720/738 6h2n 6N3P 6N16B 6X6C 6N6P-i 6e5p tube 6N17B 6N5P 6n2p 6N1P