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    DS 157 Price and Stock

    Century Spring Corp CDS-157545CS

    DISC O=1.5, I=0.755, T=0.045
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CDS-157545CS Box 1,914 1
    • 1 $0.66
    • 10 $0.66
    • 100 $0.66
    • 1000 $0.66
    • 10000 $0.66
    		Buy Now

    Century Spring Corp CDS-157698CS

    DISC O=1.5, I=0.761, T=0.098
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CDS-157698CS Box 645 1
    • 1 $4.36
    • 10 $4.36
    • 100 $4.36
    • 1000 $4.36
    • 10000 $4.36
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    Century Spring Corp CDS-157659CS

    DISC O=1.5, I=0.761, T=0.059
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CDS-157659CS Box 567 1
    • 1 $1.81
    • 10 $1.81
    • 100 $1.81
    • 1000 $1.81
    • 10000 $1.81
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    Texas Instruments SN74LVC1G3157DSFR

    Analog Switch ICs SPDT ANALOG SWITCH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SN74LVC1G3157DSFR 11,153
    • 1 $0.2
    • 10 $0.116
    • 100 $0.082
    • 1000 $0.073
    • 10000 $0.065
    		Buy Now

    Taoglas Antenna Solutions DSGP.1575.18.4.A.02

    Antennas DSGP.1575.18.4 18*18*4mm GPS L1 & Galileo E1 Ceramic Patch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DSGP.1575.18.4.A.02 1,205
    • 1 $8.62
    • 10 $8.6
    • 100 $7.9
    • 1000 $6.55
    • 10000 $6.55
    		Buy Now
    Find more DS 157 price and stock on Findchips.com

    DS 157 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DS157DC Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    DS 157 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    33CN10N

    Abstract: IPP35CN10N 34cn
    Text: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N PG-TO263-3 PG-TO252-3 33CN10N 34cn

    33CN10N

    Abstract: IPP35CN10N IEC61249-2-21 IPB34CN10N G
    Text: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N IEC61249-2-21 PG-TO263-3 33CN10N IEC61249-2-21 IPB34CN10N G

    DIODE D27

    Abstract: 2SC3115-TBD27 35CN10N
    Text: IPI35CN10N G OptiMOS 2 Power-Transistor IPB35CN10N G IPD33CN10N G IPP35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB35CN10N IPI35CN10N IPP35CN10N IPD33CN10N IPU33CN10N DIODE D27 2SC3115-TBD27 35CN10N

    33CN10N

    Abstract: to262 pcb footprint IPP35CN10N IPD33CN 34cn 33cn10 34CN10N 35CN10
    Text: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N PG-TO263-3 PG-TO252-3 33CN10N to262 pcb footprint IPD33CN 34cn 33cn10 34CN10N 35CN10

    33cn10n

    Abstract: DIODE D27 IPD33CN10N D27D27 35CN10N d804 IPP35CN10N marking 27.A 2SC3115-TBD27
    Text: IPI35CN10N G OptiMOS 2 Power-Transistor IPB35CN10N G IPD33CN10N G IPP35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB35CN10N IPI35CN10N IPD33CN10N IPP35CN10N IPU33CN10N 33cn10n DIODE D27 D27D27 35CN10N d804 marking 27.A 2SC3115-TBD27

    33CN10N

    Abstract: D27D27 33cn10 IPD33CN10N
    Text: IPI35CN10N G OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G IPP35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPP35CN10N IPD33CN10N IPU33CN10N 33CN10N D27D27 33cn10

    IPB021N04N

    Abstract: IEC61249-2-21 JESD22
    Text: IPB021N04N OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 40 V R DS(on),max 2.1 mΩ ID 160 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		PDF IPB021N04N PG-TO263-7 IEC61249-2-21 21N04N IPB021N04N IEC61249-2-21 JESD22

    zener diode 46a

    Abstract: DSBT2-S-DC12V DSBT2-S-DC24V DS2E-M-DC24V DSBT2-M-2D-DC12V DSBT2-M-2D-DC24V LR26550 solid state 220 volt stabilizer circuit dsbt2-s-dc5v AC DC DIGITAL ammeter diagram
    Text: DS-BT DS-BT RELAYS BABT APPROVED DS RELAYS 20.65 .813 BABT CR No.: 0104 UL File No.: E43149 CSA File No.: LR26550 10.65 .419 10.5 .413 • • • • mm inch Approved by BABT Certificate of Recognition 4,000 V breakdown voltage Reinforced insulation between coil and contacts


    Original     		PDF E43149 LR26550 zener diode 46a DSBT2-S-DC12V DSBT2-S-DC24V DS2E-M-DC24V DSBT2-M-2D-DC12V DSBT2-M-2D-DC24V LR26550 solid state 220 volt stabilizer circuit dsbt2-s-dc5v AC DC DIGITAL ammeter diagram

    IEC61249-2-21

    Abstract: IPB030N08N3 JESD22
    Text: IPB030N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for motor drive applications V DS 80 V R DS on ,max 3.0 mΩ ID 160 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB030N08N3 IEC61249-2-21 PG-TO263-7 030N08N IEC61249-2-21 JESD22

    030N08N

    Abstract: IPB030N08N3 JESD22 GS5008
    Text: IPB030N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for motor drive applications V DS 80 V R DS(on),max 3.0 mΩ ID 160 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB030N08N3 PG-TO263-7 030N08N 10ngerous 030N08N JESD22 GS5008

    sii861

    Abstract: 19F590 SiI859 SiI-DS-0026-D 6Af amplifier
    Text: SiI859 / SiI863 Data Sheet Silicon Image, Inc. Revision 1.2 May, 2002 SiI-DS-0026-D Silicon Image, Inc. SiI859 / SiI863 SiI-DS-0026-D Table of Contents Table of Contents . 2


    Original     		PDF SiI859 SiI863 SiI-DS-0026-D SiI863 SiI-DS-0026-C sii861 19F590 6Af amplifier

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SiI859 / SiI861 Data Sheet Silicon Image Confidential Information Silicon Image, Inc. Revision 0.6 November, 2000 SiI/DS-0026-06 Silicon Image, Inc. PRELIMINARY SiI859 / SiI861 SiI/DS-0026-06 Table of Contents Table of Contents. 2


    Original     		PDF SiI859 SiI861 SiI/DS-0026-06 SiI861

    Untitled

    Abstract: No abstract text available
    Text: +&1 6HULHV  +LJK &DS 13 +RO\ 6WRQH 0XOWLOD\HU &HUDPLF &KLS &DSDFLWRUV > +LJK &DS 13 @ +&1 6HULHV Replacement for Film Capacitor ‹ Features ‹ Applications ‰ Suitable for ADSL filter circuits, cable Modem and coupling circuits, general Telecommunication use,


    Original     		PDF 16Vdc 50Vdc 30ppm/

    1117 transistor 0340 180

    Abstract: M13Q floorplan io uart vhdl MSM13Q
    Text: MSM13/14Q 35µm DS 9…9/14Backup Page -1 Friday, November 21, 1997 11.17 a DATA SHEET O K I A S I C P R O D U C T S MSM13Q0000/14Q0000 0.35 µm Sea of Gates Arrays November 1997 MSM13/14Q 35µm DS 9…9/14Backup Page 0 Friday, November 21, 1997 11.17 a MSM13/14Q 35µm DS 9…9/14Backup Page 1 Friday, November 21, 1997 11.17 a


    Original     		PDF MSM13/14Q 9/14Backup MSM13Q0000/14Q0000 MSM13Q/14Q MSM13Q0000/14Q0000 MSM13Q/14Q" 1117 transistor 0340 180 M13Q floorplan io uart vhdl MSM13Q

    9428h

    Abstract: NAD 208 PSB 21381 GP10 GP15 pmb dect wiener filter intel LGA 1150 PIN diagram GP141
    Text: ICs for Communications Acoustic Echo Canceller ACE PSB 2170 Version 2.1 Preliminary Data Sheet 10.99 DS 2 Revision History: Current Version:Preliminary Data Sheet 10.99 Previous Version: DS 1 Page in previous Version Page (in new Version) Subjects (major changes since last revision)


    Original     		PDF

    065N06L

    Abstract: IPB063N06L IPP063N06L PG-TO263-3-2 th58 D53A
    Text: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 6.5 mΩ ID 80 A • 175 °C operating temperature • Avalanche rated


    Original     		PDF IPB065N06L IPP065N06L IPB063N06L PG-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 063N06L IPP063N06L 065N06L PG-TO263-3-2 th58 D53A

    IPP065N06L

    Abstract: d80 DIODE PG-TO220-3 IPP063N06L 065N06L IPB063N06L IPP065N06LG
    Text: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features V DS 60 V • For fast switching converters and sync. rectification R DS on ,max 6.5 m: • N-channel enhancement - logic level ID 80 A • 175 °C operating temperature • Avalanche rated


    Original     		PDF IPB065N06L IPP065N06L IPB063N06L PG-TO263-3 PG-TO220-3 063N06L IPP063N06L 065N06L d80 DIODE PG-TO220-3 065N06L IPP065N06LG

    065N06L

    Abstract: IEC61249-2-21 IPB063N06L IPP063N06L PG-TO263-3-2 d80 DIODE
    Text: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 6.5 mΩ ID 80 A • 175 °C operating temperature • Avalanche rated


    Original     		PDF IPB065N06L IPP065N06L IEC61249-2-21 IPB063N06L P-TO263-3-2 PG-TO263-3-2 063N06L PG-TO220-3-1 065N06L IEC61249-2-21 IPP063N06L PG-TO263-3-2 d80 DIODE

    STS2305A

    Abstract: No abstract text available
    Text: STS2305A Green Product S a mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 70 @ VGS=-4.5V -20V


    Original     		PDF STS2305A 23-3L OT23-3L OT23-3L STS2305A

    065N06L

    Abstract: No abstract text available
    Text: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 6.5 mΩ ID 80 A • 175 °C operating temperature • Avalanche rated


    Original     		PDF IPB065N06L IPP065N06L IPB063N06L IPP063N06L PG-TO263-3-2 P-TO263-3-2 065N06L PP-TO220-3-1

    TDA 11115

    Abstract: ALI 3105 TCM3105 "64-pin" rockwell modem rc2324 TDA 2025 IA4054 RC2424DP tda 12004 1650M
    Text: RC2424DP/DS Integral Modems Rockwell RC2424DP/DS 2400 bps Full-Duplex Modem Data Pump Device Set INTRODUCTION FEATURES The Rockwell RC2424DP/DS is a 2400 bps, full-duplex, OEM, data pump modem device set. The RC2424DP/DS operates over the public switched telephone network


    OCR Scan     		PDF RC2424DP/DS RC2424DP/DS 64-pin 68-pin 40-pin 44-pin 64-Pln TDA 11115 ALI 3105 TCM3105 "64-pin" rockwell modem rc2324 TDA 2025 IA4054 RC2424DP tda 12004 1650M

    STC104

    Abstract: C101 STC101 G0723 datao-31 IEEE 3 bus datas G072370
    Text: y za SGS-THOMSON STC101 D lM ltI© H [M ) ilO © l> PARALLEL DS-LINKT ADAPTOR ENGINEERING DATA FEATURES • High speed parallel to DS-Link converter. ■ Data-Strobe Link DS-LinkT) interface device for high speed asynchronous communications avoids the need for high speed clocks within the


    OCR Scan     		PDF STC101 STC104 0G72424 C101 STC101 G0723 datao-31 IEEE 3 bus datas G072370

    Untitled

    Abstract: No abstract text available
    Text: / = 7 S G S -T H O M S O N » » i t i » * STC101 PARALLEL DS-LINKT ADAPTOR ENGINEERING DATA FEATURES • High speed parallel to DS-Link converter. ■ Data-Strobe Link DS-LinkT interface device for high speed asynchronous communications avoids the need for high speed clocks within the


    OCR Scan     		PDF STC101 STC104

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS ICs for Communications ATM Layer Processor ALP PXB 4350 E Version 1.1 Preliminary Data Sheet 09.98 DS 2 PXB 4350 E Revision History: Current Version: 09.98 Previous Version: Preliminary Data Sheet 08.97 DS 1 Page (in previous Version) Page (in current


    OCR Scan     		PDF