IPB021N04N Search Results

IPB021N04N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IPB021N04N Abstract: IEC61249-2-21 JESD22 Text: IPB021N04N OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 40 V R DS(on),max 2.1 mΩ ID 160 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant	Original	PDF	IPB021N04N PG-TO263-7 IEC61249-2-21 21N04N IPB021N04N IEC61249-2-21 JESD22

Catalog Datasheet

MFG & Type

PDF

Document Tags

IPB021N04N

Abstract: IEC61249-2-21 JESD22
Text: IPB021N04N OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 40 V R DS(on),max 2.1 mΩ ID 160 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

Original

PDF

IPB021N04N PG-TO263-7 IEC61249-2-21 21N04N IPB021N04N IEC61249-2-21 JESD22