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    35CN10N Search Results

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    35CN10N Price and Stock

    Infineon Technologies AG IPP35CN10N G

    MOSFET N-CH 100V 27A TO220-3
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    DigiKey IPP35CN10N G Tube 500
    • 1 -
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    • 1000 $0.69456
    • 10000 $0.69456
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    Infineon Technologies AG IPI35CN10N G

    MOSFET N-CH 100V 27A TO262-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPI35CN10N G Tube 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.71784
    • 10000 $0.71784
    		Buy Now

    35CN10N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    33CN10N

    Abstract: IPP35CN10N 34cn
    Text: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G 35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N PG-TO263-3 PG-TO252-3 33CN10N 34cn

    DIODE D27

    Abstract: 2SC3115-TBD27 35CN10N
    Text: 35CN10N G OptiMOS 2 Power-Transistor 35CN10N G IPD33CN10N G 35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB35CN10N IPI35CN10N IPP35CN10N IPD33CN10N IPU33CN10N DIODE D27 2SC3115-TBD27 35CN10N

    33CN10N

    Abstract: IPP35CN10N IEC61249-2-21 IPB34CN10N G
    Text: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G 35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N IEC61249-2-21 PG-TO263-3 33CN10N IEC61249-2-21 IPB34CN10N G

    Untitled

    Abstract: No abstract text available
    Text: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G 35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 33 mW ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N IEC61249-2-21 PG-TO263-3

    33CN10N

    Abstract: to262 pcb footprint IPP35CN10N IPD33CN 34cn 33cn10 34CN10N 35CN10
    Text: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G 35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N PG-TO263-3 PG-TO252-3 33CN10N to262 pcb footprint IPD33CN 34cn 33cn10 34CN10N 35CN10

    33cn10n

    Abstract: DIODE D27 IPD33CN10N D27D27 35CN10N d804 IPP35CN10N marking 27.A 2SC3115-TBD27
    Text: 35CN10N G OptiMOS 2 Power-Transistor 35CN10N G IPD33CN10N G 35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB35CN10N IPI35CN10N IPD33CN10N IPP35CN10N IPU33CN10N 33cn10n DIODE D27 D27D27 35CN10N d804 marking 27.A 2SC3115-TBD27

    33CN10N

    Abstract: D27D27 33cn10 IPD33CN10N
    Text: 35CN10N G OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G 35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPP35CN10N IPD33CN10N IPU33CN10N 33CN10N D27D27 33cn10