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    Infineon Technologies AG IPB34CN10NGATMA1

    MOSFET N-CH 100V 27A D2PAK
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    DigiKey IPB34CN10NGATMA1 Reel
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    Infineon Technologies AG IPB34CN10NG

    OPTIMOS2 POWER-TRANSISTOR Power Field-Effect Transistor, 27A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    ComSIT USA IPB34CN10NG 47
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    33CN10N

    Abstract: IPP35CN10N 34cn
    Text: OptiMOS 2 Power-Transistor 34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N PG-TO263-3 PG-TO252-3 33CN10N 34cn

    33CN10N

    Abstract: IPP35CN10N IEC61249-2-21 IPB34CN10N G
    Text: OptiMOS 2 Power-Transistor 34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N IEC61249-2-21 PG-TO263-3 33CN10N IEC61249-2-21 IPB34CN10N G

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    Abstract: No abstract text available
    Text: OptiMOS 2 Power-Transistor 34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 33 mW ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N IEC61249-2-21 PG-TO263-3

    33CN10N

    Abstract: to262 pcb footprint IPP35CN10N IPD33CN 34cn 33cn10 34CN10N 35CN10
    Text: OptiMOS 2 Power-Transistor 34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N PG-TO263-3 PG-TO252-3 33CN10N to262 pcb footprint IPD33CN 34cn 33cn10 34CN10N 35CN10

    33CN10N

    Abstract: D27D27 33cn10 IPD33CN10N
    Text: IPI35CN10N G OptiMOS 2 Power-Transistor 34CN10N G IPD33CN10N G IPP35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPP35CN10N IPD33CN10N IPU33CN10N 33CN10N D27D27 33cn10