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    33CN10N Search Results

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    33CN10N Price and Stock

    Infineon Technologies AG IPD33CN10NGATMA1

    MOSFET N-CH 100V 27A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPD33CN10NGATMA1 Reel 27,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.37175
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    IPD33CN10NGATMA1 Digi-Reel 1
    • 1 $1.1
    • 10 $0.697
    • 100 $0.4649
    • 1000 $0.37176
    • 10000 $0.37176
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    Avnet Americas IPD33CN10NGATMA1 Reel 4 Weeks 841
    • 1 $0.4337
    • 10 $0.4337
    • 100 $0.4077
    • 1000 $0.3686
    • 10000 $0.3686
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    IPD33CN10NGATMA1 Reel 18 Weeks 2,500
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    Mouser Electronics IPD33CN10NGATMA1 3,629
    • 1 $0.7
    • 10 $0.57
    • 100 $0.494
    • 1000 $0.465
    • 10000 $0.371
    		Buy Now
    Newark IPD33CN10NGATMA1 Bulk 715 1
    • 1 $0.957
    • 10 $0.787
    • 100 $0.612
    • 1000 $0.513
    • 10000 $0.513
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    Rochester Electronics IPD33CN10NGATMA1 2,500 1
    • 1 $0.4337
    • 10 $0.4337
    • 100 $0.4077
    • 1000 $0.3686
    • 10000 $0.3686
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    Chip1Stop IPD33CN10NGATMA1 Cut Tape 2,500
    • 1 -
    • 10 $0.472
    • 100 $0.472
    • 1000 $0.472
    • 10000 $0.472
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    EBV Elektronik IPD33CN10NGATMA1 19 Weeks 2,500
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    New Advantage Corporation IPD33CN10NGATMA1 5,000 1
    • 1 -
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    • 10000 $0.4
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    Win Source Electronics IPD33CN10NGATMA1 80,000
    • 1 -
    • 10 -
    • 100 $1.392
    • 1000 $1.131
    • 10000 $1.131
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    Infineon Technologies AG IPD33CN10NGBUMA1

    MOSFET N-CH 100V 27A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPD33CN10NGBUMA1 Reel
    • 1 -
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    Infineon Technologies AG IPD33CN10NG

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IPD33CN10NG 111 4
    • 1 -
    • 10 $1.575
    • 100 $0.5906
    • 1000 $0.5906
    • 10000 $0.5906
    		Buy Now
    Win Source Electronics IPD33CN10NG 80,000
    • 1 -
    • 10 -
    • 100 $1.392
    • 1000 $1.131
    • 10000 $1.131
    		Buy Now

    33CN10N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    33CN10N

    Abstract: IPP35CN10N 34cn
    Text: OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N PG-TO263-3 PG-TO252-3 33CN10N 34cn

    DIODE D27

    Abstract: 2SC3115-TBD27 35CN10N
    Text: IPI35CN10N G OptiMOS 2 Power-Transistor IPB35CN10N G 33CN10N G IPP35CN10N G 33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB35CN10N IPI35CN10N IPP35CN10N IPD33CN10N IPU33CN10N DIODE D27 2SC3115-TBD27 35CN10N

    33CN10N

    Abstract: IPP35CN10N IEC61249-2-21 IPB34CN10N G
    Text: OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N IEC61249-2-21 PG-TO263-3 33CN10N IEC61249-2-21 IPB34CN10N G

    Untitled

    Abstract: No abstract text available
    Text: OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 33 mW ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N IEC61249-2-21 PG-TO263-3

    33CN10N

    Abstract: to262 pcb footprint IPP35CN10N IPD33CN 34cn 33cn10 34CN10N 35CN10
    Text: OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N PG-TO263-3 PG-TO252-3 33CN10N to262 pcb footprint IPD33CN 34cn 33cn10 34CN10N 35CN10

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    33cn10n

    Abstract: DIODE D27 IPD33CN10N D27D27 35CN10N d804 IPP35CN10N marking 27.A 2SC3115-TBD27
    Text: IPI35CN10N G OptiMOS 2 Power-Transistor IPB35CN10N G 33CN10N G IPP35CN10N G 33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB35CN10N IPI35CN10N IPD33CN10N IPP35CN10N IPU33CN10N 33cn10n DIODE D27 D27D27 35CN10N d804 marking 27.A 2SC3115-TBD27

    33CN10N

    Abstract: D27D27 33cn10 IPD33CN10N
    Text: IPI35CN10N G OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPP35CN10N G 33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original     		PDF IPB34CN10N IPI35CN10N IPP35CN10N IPD33CN10N IPU33CN10N 33CN10N D27D27 33cn10